S. Blonkowski

1.0k total citations
53 papers, 802 citations indexed

About

S. Blonkowski is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Blonkowski has authored 53 papers receiving a total of 802 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Blonkowski's work include Semiconductor materials and devices (33 papers), Advanced Memory and Neural Computing (14 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). S. Blonkowski is often cited by papers focused on Semiconductor materials and devices (33 papers), Advanced Memory and Neural Computing (14 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). S. Blonkowski collaborates with scholars based in France, Switzerland and Germany. S. Blonkowski's co-authors include P. Allongue, A. Halimaoui, T. Baron, Michael J. Gordon, C. Vallée, S. Bruyère, M. Gros‐Jean, M. Kogelschatz, Éliane Souteyrand and O. Cueto and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

S. Blonkowski

50 papers receiving 790 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Blonkowski France 18 707 347 145 105 86 53 802
S. Jakschik Germany 14 772 1.1× 353 1.0× 108 0.7× 117 1.1× 64 0.7× 39 866
Kow‐Ming Chang Taiwan 17 742 1.0× 275 0.8× 89 0.6× 43 0.4× 86 1.0× 90 823
H. García Spain 17 816 1.2× 345 1.0× 113 0.8× 125 1.2× 37 0.4× 90 891
J.S. Bow United States 11 432 0.6× 318 0.9× 97 0.7× 176 1.7× 93 1.1× 24 716
Gitanjali Kolhatkar Canada 13 563 0.8× 474 1.4× 173 1.2× 118 1.1× 156 1.8× 53 850
Chin Shen Ong Sweden 12 325 0.5× 391 1.1× 111 0.8× 145 1.4× 78 0.9× 25 603
Fumiyoshi Takano Japan 13 487 0.7× 272 0.8× 98 0.7× 142 1.4× 32 0.4× 39 654
V. Delaye France 19 885 1.3× 229 0.7× 57 0.4× 199 1.9× 228 2.7× 70 1.0k
J. López-Vidrier Spain 16 610 0.9× 622 1.8× 87 0.6× 95 0.9× 250 2.9× 57 792
Peisong Wu China 13 560 0.8× 552 1.6× 172 1.2× 89 0.8× 183 2.1× 18 821

Countries citing papers authored by S. Blonkowski

Since Specialization
Citations

This map shows the geographic impact of S. Blonkowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Blonkowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Blonkowski more than expected).

Fields of papers citing papers by S. Blonkowski

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Blonkowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Blonkowski. The network helps show where S. Blonkowski may publish in the future.

Co-authorship network of co-authors of S. Blonkowski

This figure shows the co-authorship network connecting the top 25 collaborators of S. Blonkowski. A scholar is included among the top collaborators of S. Blonkowski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Blonkowski. S. Blonkowski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Blonkowski, S.. (2024). On the effect of polarization relaxation on dielectric breakdown. Journal of Applied Physics. 136(10).
2.
Blonkowski, S., X. Federspiel, Dibyendu Roy, et al.. (2024). Fine Characterization and Modeling of the Frequency Dependence of TDDB in RF Domain (F>10GHz). 1–4.
3.
Federspiel, X., et al.. (2022). Frequency dependant gate oxide TDDB model. SPIRE - Sciences Po Institutional REpository. P25–1. 6 indexed citations
4.
Cueto, O., et al.. (2020). Phase-field modeling of the non-congruent crystallization of a ternary Ge–Sb–Te alloy for phase-change memory applications. Journal of Applied Physics. 128(18). 10 indexed citations
5.
Jeannot, S., et al.. (2017). Fabrication of Planar Back End of Line Compatible HfO$_x$ Complementary Resistive Switches. IEEE Transactions on Nanotechnology. 16(5). 745–751. 6 indexed citations
6.
Navarro, G., V. Sousa, N. Castellani, et al.. (2016). High Operating Temperature Reliability of Optimized Ge-Rich GST Wall PCM Devices. 1–4. 7 indexed citations
7.
Cueto, O., Véronique Sousa, G. Navarro, & S. Blonkowski. (2015). Coupling the Phase-Field Method with an electrothermal solver to simulate phase change mechanisms in PCRAM cells. 301–304. 11 indexed citations
8.
Blonkowski, S., et al.. (2015). Bipolar resistive switching from liquid helium to room temperature. Journal of Physics D Applied Physics. 48(34). 345101–345101. 19 indexed citations
9.
Blonkowski, S., et al.. (2013). Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy. Microelectronics Reliability. 53(12). 1857–1862. 5 indexed citations
10.
Bertaud, T., et al.. (2012). Electrical Characterization of Advanced MIM Capacitors With ${\rm ZrO}_{2}$ Insulator for High-Density Packaging and RF Applications. IEEE Transactions on Components Packaging and Manufacturing Technology. 2(3). 502–509. 18 indexed citations
11.
Delcroix, P., S. Blonkowski, M. Kogelschatz, et al.. (2011). SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum. Microelectronic Engineering. 88(7). 1376–1379. 8 indexed citations
12.
Mercier, Denis, et al.. (2009). Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling. Journal of Applied Physics. 105(4). 37 indexed citations
13.
14.
Durand, Christophe, C. Vallée, Catherine Dubourdieu, et al.. (2006). Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(3). 459–466. 1 indexed citations
15.
Durand, Christophe, C. Vallée, V. Loup, et al.. (2004). Metal–insulator–metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(3). 655–660. 28 indexed citations
16.
Mazoyer, P., S. Blonkowski, A. Farcy, et al.. (2004). MIM HfO/sub 2/ low leakage capacitors for eDRAM integration at interconnect levels. 117–119. 2 indexed citations
17.
Bruyère, S., et al.. (2003). MIM capacitance variation under electrical stress. Microelectronics Reliability. 43(8). 1237–1240. 42 indexed citations
18.
Allongue, P., S. Blonkowski, & Éliane Souteyrand. (1992). Experimental investigation of charge transfer at the semiconductor/electrolyte junction. Electrochimica Acta. 37(5). 781–797. 28 indexed citations
19.
Allongue, P. & S. Blonkowski. (1991). Corrosion of III-V compounds; a comparative study of GaAs and InP. Journal of Electroanalytical Chemistry. 316(1-2). 57–77. 14 indexed citations
20.
Allongue, P., S. Blonkowski, & Daniel Lincot. (1991). Study of reaction coupling and interfacial kinetics at semiconductor electrodes by band edge shift measurements. Journal of Electroanalytical Chemistry. 300(1-2). 261–281. 20 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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