Raj Jammy

1.2k total citations
89 papers, 977 citations indexed

About

Raj Jammy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Raj Jammy has authored 89 papers receiving a total of 977 indexed citations (citations by other indexed papers that have themselves been cited), including 87 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 11 papers in Biomedical Engineering. Recurrent topics in Raj Jammy's work include Semiconductor materials and devices (79 papers), Advancements in Semiconductor Devices and Circuit Design (61 papers) and Integrated Circuits and Semiconductor Failure Analysis (26 papers). Raj Jammy is often cited by papers focused on Semiconductor materials and devices (79 papers), Advancements in Semiconductor Devices and Circuit Design (61 papers) and Integrated Circuits and Semiconductor Failure Analysis (26 papers). Raj Jammy collaborates with scholars based in United States, South Korea and Japan. Raj Jammy's co-authors include Prashant Majhi, Jungwoo Oh, Chang Yong Kang, Hsing‐Huang Tseng, Kanghoon Jeon, Chenming Hu, Tsu‐Jae King Liu, Anupama Bowonder, Patrick Lysaght and Pratik Patel and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Raj Jammy

86 papers receiving 940 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Raj Jammy United States	16	942	212	179	169	31	89	977
Keisuke Arimoto Japan	15	587 0.6×	437 2.1×	164 0.9×	148 0.9×	15 0.5×	97	686
Wataru Mizubayashi Japan	19	1.4k 1.5×	235 1.1×	165 0.9×	287 1.7×	74 2.4×	140	1.4k
Huiling Shang United States	16	1.1k 1.2×	329 1.6×	185 1.0×	290 1.7×	35 1.1×	35	1.1k
T. Onai Japan	16	677 0.7×	134 0.6×	106 0.6×	173 1.0×	14 0.5×	52	714
C. Vrancken Belgium	19	939 1.0×	411 1.9×	118 0.7×	195 1.2×	33 1.1×	70	1.0k
Dian Lei Singapore	16	702 0.7×	261 1.2×	201 1.1×	179 1.1×	55 1.8×	39	799
Yuuichi Kamimuta Japan	15	848 0.9×	165 0.8×	106 0.6×	339 2.0×	42 1.4×	51	873
P. Ranade United States	17	1.3k 1.4×	220 1.0×	147 0.8×	148 0.9×	47 1.5×	36	1.3k
Toshinori Numata Japan	13	717 0.8×	144 0.7×	215 1.2×	98 0.6×	12 0.4×	49	779
Samerkhae Jongthammanurak United States	12	878 0.9×	469 2.2×	253 1.4×	330 2.0×	25 0.8×	22	939

Countries citing papers authored by Raj Jammy

Since Specialization

Citations

This map shows the geographic impact of Raj Jammy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Raj Jammy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Raj Jammy more than expected).

Fields of papers citing papers by Raj Jammy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Raj Jammy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Raj Jammy. The network helps show where Raj Jammy may publish in the future.

Co-authorship network of co-authors of Raj Jammy

This figure shows the co-authorship network connecting the top 25 collaborators of Raj Jammy. A scholar is included among the top collaborators of Raj Jammy based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Raj Jammy. Raj Jammy is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yuan, Ze, Chien‐Yu Chen, Aneesh Nainani, et al.. (2013). Optimal device architecture and hetero-integration scheme for III–V CMOS. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 3 indexed citations

Kang, Chang Yong, Chang-Woo Sohn, Rock‐Hyun Baek, et al.. (2013). Effects of layout and process parameters on device/circuit performance and variability for 10nm node FinFET technology. Symposium on VLSI Technology. 2013. 71–72. 4 indexed citations

Kim, Dae-Hyun, Tae‐Woo Kim, Richard J. Hill, et al.. (2013). High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications. IEEE Electron Device Letters. 34(2). 196–198. 14 indexed citations

Oh, Jungwoo, Kanghoon Jeon, Se‐Hoon Lee, et al.. (2012). High mobility CMOS transistors on Si/SiGe heterostructure channels. Microelectronic Engineering. 97. 26–28. 6 indexed citations

Kwon, Hyuk-Min, Sang-Uk Park, Byoung-Hun Lee, et al.. (2011). Conduction Mechanism and Reliability Characteristics of a Metal–Insulator–Metal Capacitor with Single ZrO₂Layer. Japanese Journal of Applied Physics. 50(4S). 04DD02–04DD02. 6 indexed citations

Gilmer, D. C., et al.. (2011). Low power ReRAM with Fab-friendly materials through PVD morphology and stoichiometry control. 1–2. 1 indexed citations

Lee, Se‐Hoon, Prashant Majhi, D. Ferrer, et al.. (2011). Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate. IEEE Transactions on Electron Devices. 58(9). 2917–2923. 1 indexed citations

Jammy, Raj, et al.. (2011). Comparison of Multilayer Dielectric Thin Films for Future Metal–Insulator–Metal Capacitors: Al₂O₃/HfO₂/Al₂O₃ versus SiO₂/HfO₂/SiO₂. Japanese Journal of Applied Physics. 50(10S). 10PB06–10PB06. 2 indexed citations

Jeon, Kanghoon, Chang Yong Kang, Jungwoo Oh, et al.. (2011). Highly scaled (Lg∼56nm) gate-last Si tunnel field-effect transistors with ION>100μA/μm. Solid-State Electronics. 65-66. 22–27. 13 indexed citations

10.

Loh, Wei-Yip, Kanghoon Jeon, Chang Yong Kang, et al.. (2010). Sub-60nm Si tunnel field effect transistors with I<inf>on</inf> >100 µA/µm. 162–165. 10 indexed citations

11.

Tseng, Hsing‐Huang, Paul Kirsch, G. Bersuker, et al.. (2009). The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper). Microelectronic Engineering. 86(7-9). 1722–1727. 17 indexed citations

12.

Oh, Jungwoo, Prashant Majhi, Chang Yong Kang, et al.. (2009). High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO₂ High-k Dielectric and Metal Gate. Japanese Journal of Applied Physics. 48(4S). 04C055–04C055. 3 indexed citations

13.

Choi, Chel‐Jong, Jungwoo Oh, Ga‐Won Lee, et al.. (2009). Microstructural Innovation of Ni Germanide on Ge-on-Si Substrate by Using Palladium Incorporation. Electrochemical and Solid-State Letters. 12(11). H402–H402. 8 indexed citations

14.

Kang, Min Ho, et al.. (2009). Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si Substrate. Journal of the Korean Physical Society. 55(1). 221–226. 3 indexed citations

15.

Adhikari, Hemant, H. R. Harris, Casey Smith, et al.. (2009). High mobility SiGe shell-Si core omega gate pFETS. 136–138. 2 indexed citations

16.

Kim, Jiyoung, et al.. (2008). Origin of tensile stress in the Si substrate induced by TiN∕HfO2 metal gate/high-k dielectric gate stack. Applied Physics Letters. 93(16). 2 indexed citations

17.

Majhi, Prashant, et al.. (2007). CMOS Scaling Beyond High-k and Metal Gates. ECS Meeting Abstracts. MA2007-02(25). 1312–1312. 1 indexed citations

18.

Lysaght, Patrick, et al.. (2007). Incipient amorphous-to-crystalline transition in HfO2 as a function of thickness scaling and anneal temperature. Journal of Non-Crystalline Solids. 354(2-9). 399–403. 16 indexed citations

19.

Bersuker, G., Chadwin D. Young, Dawei Heh, et al.. (2007). High and Low Stress Voltage Instabilities in High-K Gate Stacks. ECS Transactions. 8(1). 99–103.

20.

Lysaght, Patrick, G. Bersuker, Hsing‐Huang Tseng, & Raj Jammy. (2006). Spectroscopic analysis of the process‐dependent microstructure of ultra‐thin high‐ k gate dielectric film systems. Surface and Interface Analysis. 38(12-13). 1588–1593. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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