M. Rafik

1.0k total citations
52 papers, 347 citations indexed

About

M. Rafik is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Mechanics of Materials. According to data from OpenAlex, M. Rafik has authored 52 papers receiving a total of 347 indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 4 papers in Electronic, Optical and Magnetic Materials and 2 papers in Mechanics of Materials. Recurrent topics in M. Rafik's work include Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Integrated Circuits and Semiconductor Failure Analysis (32 papers). M. Rafik is often cited by papers focused on Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Integrated Circuits and Semiconductor Failure Analysis (32 papers). M. Rafik collaborates with scholars based in France, Switzerland and India. M. Rafik's co-authors include D. Roy, X. Federspiel, G. Ribes, X. Garros, V. Huard, F. Cacho, A. Bravaix, G. Ghibaudo, G. Reimbold and D. Rideau and has published in prestigious journals such as IEEE Electron Device Letters, Microelectronics Reliability and Microelectronic Engineering.

In The Last Decade

M. Rafik

49 papers receiving 334 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Rafik France 12 345 21 20 16 14 52 347
P. O'Sullivan Ireland 8 256 0.7× 18 0.9× 25 1.3× 35 2.2× 7 0.5× 42 276
M. Cho Belgium 12 446 1.3× 18 0.9× 50 2.5× 28 1.8× 9 0.6× 24 457
P. Fonteneau France 11 254 0.7× 12 0.6× 30 1.5× 12 0.8× 7 0.5× 22 262
R. Bolam United States 9 244 0.7× 39 1.9× 20 1.0× 12 0.8× 18 1.3× 30 249
W.W. Abadeer United States 8 321 0.9× 18 0.9× 32 1.6× 24 1.5× 13 0.9× 24 327
Jian‐Hsing Lee Taiwan 12 387 1.1× 12 0.6× 11 0.6× 9 0.6× 26 1.9× 74 393
S. Rangan United States 7 322 0.9× 19 0.9× 19 0.9× 16 1.0× 22 1.6× 12 323
Hideyuki Kikuchihara Japan 10 349 1.0× 13 0.6× 10 0.5× 36 2.3× 15 1.1× 56 361
S. Mittl United States 12 285 0.8× 22 1.0× 16 0.8× 7 0.4× 8 0.6× 28 292
N. Revil France 10 413 1.2× 5 0.2× 36 1.8× 24 1.5× 13 0.9× 47 418

Countries citing papers authored by M. Rafik

Since Specialization
Citations

This map shows the geographic impact of M. Rafik's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Rafik with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Rafik more than expected).

Fields of papers citing papers by M. Rafik

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Rafik. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Rafik. The network helps show where M. Rafik may publish in the future.

Co-authorship network of co-authors of M. Rafik

This figure shows the co-authorship network connecting the top 25 collaborators of M. Rafik. A scholar is included among the top collaborators of M. Rafik based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Rafik. M. Rafik is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Federspiel, X., et al.. (2022). Frequency dependant gate oxide TDDB model. SPIRE - Sciences Po Institutional REpository. P25–1. 6 indexed citations
2.
Federspiel, X., et al.. (2019). New Insights on Device Level TDDB at GHz Speed in Advanced CMOS Nodes. IEEE Transactions on Device and Materials Reliability. 19(2). 255–261. 11 indexed citations
3.
Garros, X., M. Rafik, F. Cacho, et al.. (2019). Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. SPIRE - Sciences Po Institutional REpository. 1–5. 1 indexed citations
4.
Rafik, M., et al.. (2019). Process Optimization for HCI Improvement in I/O Analog Devices. HAL (Le Centre pour la Communication Scientifique Directe). 1–6. 2 indexed citations
5.
Cros, A., et al.. (2018). Modeling self-heating effects in advanced CMOS nodes. 38. P–MR.3. 9 indexed citations
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Federspiel, X., et al.. (2018). New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectronics Reliability. 87. 106–112. 1 indexed citations
8.
Garros, X., A. Subirats, G. Reimbold, et al.. (2018). A new method for quickly evaluating reversible and permanent components of the BTI degradation. HAL (Le Centre pour la Communication Scientifique Directe). P–RT.6. 2 indexed citations
9.
Ndiaye, Cheikh, et al.. (2016). Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes. 24–28. 12 indexed citations
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Federspiel, X., et al.. (2014). (Invited) Effect of SOI Substrate on CMOS Devices Reliability. ECS Transactions. 61(3). 127–134.
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Delcroix, P., S. Blonkowski, M. Kogelschatz, et al.. (2011). SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum. Microelectronic Engineering. 88(7). 1376–1379. 8 indexed citations
14.
Garros, X., Laurent Brunet, M. Rafik, et al.. (2010). PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements. 4.6.1–4.6.4. 21 indexed citations
15.
Garros, X., M. Cassé, M. Rafik, et al.. (2009). Process dependence of BTI reliability in advanced HK MG stacks. Microelectronics Reliability. 49(9-11). 982–988. 8 indexed citations
16.
Rafik, M., et al.. (2009). Si O 2 interfacial layer as the origin of the breakdown of high-k dielectrics stacks. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 472–475. 13 indexed citations
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Ribes, G., M. Rafik, & D. Roy. (2007). Reliability issues for nano-scale CMOS dielectrics. Microelectronic Engineering. 84(9-10). 1910–1916. 16 indexed citations
20.
Rafik, M., X. Garros, G. Ribes, et al.. (2007). Impact of TiN Metal gate on NBTI assessed by interface states and fast transient effect characterization. 825–828. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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