D. C. Gilmer

6.0k citations

106 papers · 4.6k indexed · h-index 35

Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices 83
- Ferroelectric and Negative Capacitance Devices 51
- Advanced Memory and Neural Computing 46
- Advancements in Semiconductor Devices and Circuit Design 30
- Integrated Circuits and Semiconductor Failure Analysis 17
Cellular and Molecular Neuroscience top 2%
- Neuroscience and Neural Engineering 10
Polymers and Plastics top 5%
Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides 20
Electronic, Optical and Magnetic Materials top 10%
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 12

Co-authors: Daniele Ielmini Simone Balatti Stefano Larentis Wayne L. Gladfelter Stephen A. Campbell G. Bersuker F. Nardi P. D. Kirsch
Cited by: Electrical and Electronic Engineering Cellular and Molecular Neuroscience Polymers and Plastics
Journals: IEEE Transactions on Electron Devices (8 papers)Applied Physics Letters (7 papers)IEEE Electron Device Letters (5 papers)
Partner nations: United States Italy United Kingdom

In The Last Decade

D. C. Gilmer

102 papers receiving 4.4k citations

Peers

Countries citing papers authored by D. C. Gilmer

Since Specialization

Citations

This map shows the geographic impact of D. C. Gilmer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. C. Gilmer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. C. Gilmer more than expected).

Fields of papers citing papers by D. C. Gilmer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. C. Gilmer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. C. Gilmer. The network helps show where D. C. Gilmer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. C. Gilmer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. C. Gilmer Line = papers co-authored together D. C. Gilmer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Engineering Nanomaterials and Nanostructures for Electronic Applications: A Case Study of Carbon Nanotubes for Memory Devices Rahul Sen,Goretti Díaz,Jennifer M. Black,TM Boland,S.K. Pal,M. Ozaki,D. C. Gilmer,Thomas Rueckes	2020	5
2	NRAM: a disruptive carbon-nanotube resistance-change memory Nanotechnology ·D. C. Gilmer,Thomas Rueckes,Reem Ayyad	2018	9
3	Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy Resource-Efficient Technologies ·D. C. Gilmer	2015	7
4	Evaluation of variability and RTN in scaled RRAM Dmitry Veksler,G. Bersuker,B. Butcher,D. C. Gilmer,K. Matthews,S. Deora	2014	1
5	L_g = 100 nm In_0.7Ga_0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer Applied Physics Letters ·Donghyi Koh,Kazuki Ishizaka,寛柴田,L Pilat,Todd W. Hudnall,Christopher W. Bielawski,W. Maszara,Dmitry Veksler,D. C. Gilmer,P. D. Kirsch,S. Banerjee	2014	7
6	Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament Advanced Materials ·Simone Balatti,Stefano Larentis,D. C. Gilmer,Daniele Ielmini	2013	143
7	Low power ReRAM with Fab-friendly materials through PVD morphology and stoichiometry control Neslihan Günaydin,D. C. Gilmer,平松ゆり,G. Scaturro,Anthony A. Garofalo,Takashi Nakagawa,Paul Kirsch,Raj Jammy	2011	1
8	Metal oxide RRAM switching mechanism based on conductive filament microscopic properties IRIS UNIMORE (University of Modena and Reggio Emilia) ·G. Bersuker,D. C. Gilmer,Dekel Veksler,J. Yum,重知永野,Shichen Lian,Luca Vandelli,Andrea Padovani,Luca Larcher,Keith P. McKenna,Alexander L. Shluger,V. Iglesias,M. Porti,M. Nafrı́a,W. Taylor,P. D. Kirsch,R. Jammy	2010	92
9	Tunnel oxide degradation in TANOS devices and its origin Juan J. Moly,G. Bersuker,Putri Mas Hidayu,Dmitry Veksler,Nak Jun Sung,D. C. Gilmer,Nilesh Goel,Chan Kang,Chadwin D. Young,Mau-Chung Frank Chang,Nanda Widyani Alviolita,J. de Sales,P. D. Kirsch,R. Jammy	2010	5
10	Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe IEEE Electron Device Letters ·Jen‐Wei Huang,P. D. Kirsch,Jungwoo Oh,Se‐Hoon Lee,P. Majhi,H. R. Harris,D. C. Gilmer,G. Bersuker,Dawei Heh,Chang Seo Park,Kono Kihoto,N.I. Tsytsyura,R. Jammy	2009	17
11	Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes ECS Transactions ·J. Schaeffer,Mark Raymond,D. C. Gilmer,R. Gregory,B. Taylor,Hartmut Sell,Dina H. Triyoso,Rama I. Hegde,S. Samavedam	2008	0
12	Scaling of Hafnium-based High-k Dielectrics MRS Proceedings ·Dina H. Triyoso,Rama I. Hegde,R. Gregory,D. C. Gilmer,Юсеф Н.Ю.,Srikanth Samavedam,Luz María Martell-Ruíz,N. Rochat	2007	2
13	A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications Symposium on VLSI Technology ·Ying-rui Li,Muhammad M. Hussain,梶山美明,Kay Lee,Maja Božičević Vrhovčak,Chadwin D. Young,Minhong Woo,Sana Tehseen,D. C. Gilmer,博之若井,善一朗野元,P. Lysaght,Dawei Heh,G. Bersuker,P. D. Kirsch,H.‐H. Tseng,R. Jammy	2006	1
14	High dielectric constant materials : vlsi mosfet applications Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)) ·Howard R. Huff,D. C. Gilmer	2005	82
15	BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments IEEE Transactions on Device and Materials Reliability ·S. Kalpat,Hsing‐Huang Tseng,M. Ramón,Mohamed Solih,D. Tekleab,P.J. Tobin,D. C. Gilmer,R. I. Hegde,C. Capasso,Clarence J. Tracy,B. E. White	2005	20
16	Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films Chemistry of Materials ·Kaupo Kukli,Mikko Ritala,Tero Pilvi,Timo Sajavaara,Markku Leskelä,Anthony C. Jones,Helen C. Aspinall,D. C. Gilmer,Philip J. Tobin	2004	43
17	Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	135
18	Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation Chris Hobbs,R. I. Hegde,B. Maiti,Hsin Tseng,D. C. Gilmer,P.J. Tobin,Érick Soares dos Reis,عامر عبداللطيف حسين,Kueh Hwa Ik,Arik Messermann,Daniel Jesper,K. Reid,L.B. La,Sumiyo Tanigawa,D. Kim	1999	2
19	Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films Journal of the American Chemical Society ·C. James Taylor,D. C. Gilmer,Amani M. Nuru-Jeter,G. D. Wilk,Stephen A. Campbell,Riska Lailatul Andiri,Wayne L. Gladfelter	1999	127
20	Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide films Advanced Materials ·Amani M. Nuru-Jeter,D. C. Gilmer,Victor G. Young,Stephen A. Campbell,Wayne L. Gladfelter	1998	1

About D. C. Gilmer

D. C. Gilmer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Cellular and Molecular Neuroscience, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 106 papers that have together received 4.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (83 papers), Ferroelectric and Negative Capacitance Devices (51 papers), Advanced Memory and Neural Computing (46 papers), Advancements in Semiconductor Devices and Circuit Design (30 papers), Electronic and Structural Properties of Oxides (20 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Semiconductor materials and interfaces (12 papers) and Neuroscience and Neural Engineering (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.4k citations), Cellular and Molecular Neuroscience (656 citations), Polymers and Plastics (472 citations), Materials Chemistry (1.5k citations) and Electronic, Optical and Magnetic Materials (241 citations). D. C. Gilmer has collaborated with scholars based in United States, Italy and United Kingdom. Frequent co-authors include Daniele Ielmini, Simone Balatti, Stefano Larentis, Wayne L. Gladfelter, Stephen A. Campbell, G. Bersuker, F. Nardi, P. D. Kirsch, Luca Larcher and Andrea Padovani. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics and Chemical Vapor Deposition.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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