L.B. La

593 total citations
13 papers, 413 citations indexed

About

L.B. La is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, L.B. La has authored 13 papers receiving a total of 413 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 2 papers in Mechanics of Materials. Recurrent topics in L.B. La's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). L.B. La is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). L.B. La collaborates with scholars based in United States and Saudi Arabia. L.B. La's co-authors include Philip J. Tobin, D. Roan, R. Garcia, B. E. White, Dina H. Triyoso, C. Hobbs, R. Gregory, D. Werho, M. Ramón and J. Baker and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

In The Last Decade

L.B. La

12 papers receiving 383 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
L.B. La United States	7	399	170	48	42	32	13	413
Katsunori Onishi United States	5	358 0.9×	118 0.7×	37 0.8×	52 1.2×	27 0.8×	10	369
P. Sivasubramani United States	11	424 1.1×	245 1.4×	63 1.3×	64 1.5×	17 0.5×	26	445
M. Bude United States	4	392 1.0×	217 1.3×	42 0.9×	55 1.3×	19 0.6×	5	409
Y. Ma United States	9	307 0.8×	147 0.9×	37 0.8×	37 0.9×	11 0.3×	17	320
R. Rai United States	11	736 1.8×	255 1.5×	116 2.4×	53 1.3×	38 1.2×	17	761
Tsunehiro Ino Japan	11	447 1.1×	152 0.9×	80 1.7×	44 1.0×	14 0.4×	27	487
K. Orgassa Germany	6	370 0.9×	335 2.0×	98 2.0×	24 0.6×	22 0.7×	9	401
Taeko Ikarashi Japan	13	319 0.8×	172 1.0×	99 2.1×	25 0.6×	13 0.4×	24	373
S. Shamuilia Belgium	11	348 0.9×	225 1.3×	77 1.6×	97 2.3×	17 0.5×	16	389
Alex Demkov United States	7	260 0.7×	209 1.2×	61 1.3×	37 0.9×	6 0.2×	21	304

Countries citing papers authored by L.B. La

Since Specialization

Citations

This map shows the geographic impact of L.B. La's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L.B. La with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L.B. La more than expected).

Fields of papers citing papers by L.B. La

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L.B. La. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L.B. La. The network helps show where L.B. La may publish in the future.

Co-authorship network of co-authors of L.B. La

This figure shows the co-authorship network connecting the top 25 collaborators of L.B. La. A scholar is included among the top collaborators of L.B. La based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L.B. La. L.B. La is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

Vo, Josh N., et al.. (2025). Genome analysis uncovers an inverse correlation between alterations in P21‐activated kinases and patient survival across multiple cancer types. Physiological Reports. 13(1). e70192–e70192. 1 indexed citations

Hegde, R. I., Dina H. Triyoso, S. Kalpat, et al.. (2006). Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability. 1 indexed citations

Triyoso, Dina H., R. I. Hegde, Jennifer E. Grant, et al.. (2004). Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(4). 2121–2127. 56 indexed citations

Triyoso, Dina H., D. Roan, M. Ramón, et al.. (2004). Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]. Journal of The Electrochemical Society. 151(10). F220–F220. 148 indexed citations

Gilmer, D. C., R. I. Hegde, James A. Smith, et al.. (2003). Compatibility of silicon gates with hafnium-based gate dielectrics. Microelectronic Engineering. 69(2-4). 138–144. 21 indexed citations

Maiti, B., Philip J. Tobin, Chris Hobbs, et al.. (2002). PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology. 781–784. 13 indexed citations

Gilmer, D. C., R. I. Hegde, R. Garcia, et al.. (2002). Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics. Applied Physics Letters. 81(7). 1288–1290. 64 indexed citations

Schaeffer, J., S. Samavedam, D. C. Gilmer, et al.. (2002). Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(1). 11–17. 85 indexed citations

Samavedam, S., J. Schaeffer, D. C. Gilmer, et al.. (2002). Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO₂ Gate Dielectric. MRS Proceedings. 716. 4 indexed citations

10.

Gilmer, D. C., C. Hobbs, R. I. Hegde, et al.. (2000). Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1158–1162. 15 indexed citations

11.

Hobbs, Chris, R. I. Hegde, B. Maiti, et al.. (1999). Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation. 133–134. 2 indexed citations

12.

Hobbs, C., R. I. Hegde, B. Maiti, et al.. (1999). Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation. MRS Proceedings. 567. 1 indexed citations

13.

Nguyen, Bich-Yen, et al.. (1993). Insitu Pyrochemical Wafer Cleaning For Furnace Processing. 91 2. 109–110. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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