F. Boulanger

13.0k total citations
49 papers, 581 citations indexed

About

F. Boulanger is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. Boulanger has authored 49 papers receiving a total of 581 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 7 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. Boulanger's work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). F. Boulanger is often cited by papers focused on Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Integrated Circuits and Semiconductor Failure Analysis (17 papers). F. Boulanger collaborates with scholars based in France, Switzerland and Italy. F. Boulanger's co-authors include G. Reimbold, X. Garros, M. Cassé, M. Mouis, F. Martín, Jérôme Mitard, B. Guillaumot, F. Andrieu, L. Clavelier and C. Le Royer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

F. Boulanger

48 papers receiving 555 citations

Peers

Countries citing papers authored by F. Boulanger

Since Specialization

Citations

This map shows the geographic impact of F. Boulanger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Boulanger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Boulanger more than expected).

Fields of papers citing papers by F. Boulanger

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Boulanger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Boulanger. The network helps show where F. Boulanger may publish in the future.

Co-authorship network of co-authors of F. Boulanger

This figure shows the co-authorship network connecting the top 25 collaborators of F. Boulanger. A scholar is included among the top collaborators of F. Boulanger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Boulanger. F. Boulanger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Statistical description of dust polarized emission from the diffuse interstellar medium 2020 ·Springer Link (Chiba Institute of Technology) ·Bruno Régaldo-Saint Blancard, F. Levrier, Erwan Allys, (unknown), F. Boulanger	24
2	Online Liquid Chromatography-Tandem Mass Spectrometry Cyanide Determination in Blood 2011 ·Journal of Analytical Toxicology ·Christian Lacroix, Élodie Saussereau, F. Boulanger, Jean‐Pierre Goullé	33
3	V_T Stability Of High-K/Metal Gate Stacks with Device Scaling in 30nm FDSOI Technology 2011 ·ECS Transactions ·X. Garros, Laurent Brunet, M. Cassé, O. Weber, François Andrieu, D. Lafond, (unknown), G. Reimbold, F. Boulanger	1
4	HfO2-based gate stacks transport mechanisms and parameter extraction 2010 ·Solid-State Electronics ·J. Coignus, Cédric Leroux, R. Clerc, R. Truche, G. Ghibaudo, G. Reimbold, F. Boulanger	1
5	Modeling of program, erase and retention characteristics of charge-trap gate all around memories 2010 ·Solid-State Electronics ·E. Nowak, L. Perniola, G. Ghibaudo, G. Molas, G. Reimbold, B. De Salvo, F. Boulanger	5
6	Investigation of mechanisms shifting metal effective workfunction towards P+ for various Al incorporation scenarii 2010 ·(unknown), (unknown), G. Reimbold, F. Allain, A. Toffoli, G. Ghibaudo, F. Martín, H. Grampeix, F. Boulanger	2
7	PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements 2010 ·X. Garros, Laurent Brunet, M. Rafik, J. Coignus, G. Reimbold, Emmanuel Vincent, A. Bravaix, F. Boulanger	21
8	Analytical modeling of tunneling current through SiO2–HfO2 stacks in metal oxide semiconductor structures 2009 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. Coignus, R. Clerc, (unknown), G. Reimbold, G. Ghibaudo, F. Boulanger	8
9	Process dependence of BTI reliability in advanced HK MG stacks 2009 ·Microelectronics Reliability ·X. Garros, M. Cassé, M. Rafik, C. Fenouillet-Béranger, G. Reimbold, F. Martín, Claudia Wiemer, F. Boulanger	8
10	Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack 2009 ·Solid-State Electronics ·(unknown), M. Cassé, M. Mouis, Ariel Haziot, (unknown), G. Ghibaudo, F. Boulanger	17
11	A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors 2009 ·Journal of Applied Physics ·M. Cassé, (unknown), (unknown), Neïla Bhouri, F. Andrieu, G. Reimbold, F. Boulanger, M. Mouis, G. Ghibaudo, D. K. Maude	14
12	Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory 2008 ·Solid-State Electronics ·S. Jacob, B. De Salvo, L. Perniola, (unknown), S. Bodnar, R. Coppard, (unknown), (unknown), (unknown), S. Lombardo, (unknown), E. Jalaguier, (unknown), F. Boulanger, S. Deleonibus	8
13	Mobility of strained and unstrained short channel FD-SOI MOSFETs: New insight by magnetoresistance 2008 ·M. Cassé, (unknown), Neïla Bhouri, F. Andrieu, D. K. Maude, M. Mouis, G. Reimbold, F. Boulanger	4
14	Guidelines to improve mobility performances and BTI reliability of advanced high-k/metal gate stacks 2008 ·X. Garros, M. Cassé, G. Reimbold, F. Martín, Cédric Leroux, (unknown), O. Renault, (unknown), F. Boulanger	25
15	Impact of crystallinity of High-k oxides on Vt instabilities of NMOS devices assessed by physical and electrical measurements 2008 ·X. Garros, P. Besson, G. Reimbold, V. Loup, T. Salvetat, (unknown), S. Lhostis, F. Boulanger	7
16	Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory 2007 ·S. Jacob, (unknown), S. Bodnar, R. Coppard, (unknown), (unknown), (unknown), B. De Salvo, L. Perniola, E. Jalaguier, F. Boulanger, S. Deleonibus	4
17	Experimental evidence and extraction of the electron mass variation in [110] uniaxially strained MOSFETs 2007 ·Solid-State Electronics ·(unknown), M. Cassé, M. Mouis, G. Reimbold, D. Blachier, (unknown), B. Guillaumot, F. Boulanger	14
18	Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks 2007 ·Journal of Applied Physics ·P. Batude, X. Garros, L. Clavelier, C. Le Royer, Jean‐Michel Hartmann, V. Loup, P. Besson, L. Vandroux, Y. Campidelli, S. Deleonibus, F. Boulanger	38
19	In Depth Analysis of VT Instabilities in HFO2 Technologies by Charge Pumping Measurements and Electrical Modeling 2007 ·X. Garros, Jérôme Mitard, C. Leroux, G. Reimbold, F. Boulanger	8
20	Process damages in HfO/sub 2/TiN stacks: the key role of H/sup 0/ and H/sub 2/ anneals 2006 ·X. Garros, G. Reimbold, O. Louveau, P. Holliger, C. Hobbs, C. Leroux, Loan Pham-Nguyen, F. Martín, F. Boulanger	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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