T. Ngai

626 citations

31 papers · 441 indexed · h-index 11

Impact in

Instrumentation top 10%
- Advanced Optical Sensing Technologies
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices

Papers in

Instrumentation 2
Electrical and Electronic Engineering 30
- Semiconductor materials and devices 21
- Advancements in Semiconductor Devices and Circuit Design 16
- Photonic and Optical Devices 7
- Integrated Circuits and Semiconductor Failure Analysis 6
- Semiconductor Lasers and Optical Devices 5
- Ferroelectric and Negative Capacitance Devices 4
- Silicon Carbide Semiconductor Technologies 4

Co-authors: Rajni Sharma Xiaofeng Chen J. C. Lee Sanjay K. Banerjee Christopher V. Poulton Seth Kruger Michael R. Watts Ami Yaacobi
Journals: Applied Physics Letters (4 papers)IEEE Electron Device Letters (2 papers)Scientific Reports (1 paper)Solid-State Electronics (1 paper)IEEE Journal of Solid-State Circuits (1 paper)
Partner nations: United States Italy Germany

In The Last Decade

T. Ngai

30 papers receiving 408 citations

Peers

Countries citing papers authored by T. Ngai

Since Specialization

Citations

This map shows the geographic impact of T. Ngai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Ngai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Ngai more than expected).

Fields of papers citing papers by T. Ngai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Ngai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Ngai. The network helps show where T. Ngai may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Ngai, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Ngai Line = papers co-authored together T. Ngai links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	A waveguide thermal emitter APL Photonics ·Marcel W. Pruessner, 正人宇治, Tengfei Ye, Leiyu He, Scott A. Holmstrom, Gerald Leake, T. Ngai, 张淑珍, Peter G. Goetz, Todd H. Stievater	2025	0
2	Highly uniform thermally undercut silicon photonic devices in a 300 mm CMOS foundry process Scientific Reports ·René Alcaíno Allende, Farida Parvin, Yuyang Wang, Asher Novick, A. Matthew Smith, Christopher C. Tison, Eric Luu, Kazuhito Horikiri, D. V Incenzi, Lewis G. Carpenter, T. Ngai, Gerald Leake, Daniel J. Coleman, Xiang Meng, Stefan F. Preble, Michael L. Fanto, Farid Khalilov, Anthony Rizzo	2025	1
3	AIM Photonics Demonstration of a 300 mm Si Photonics Interposer Mariana Chaves, Seth Kruger, T. Ngai, 王清文, Hao Yang, Skylar Deckoff–Jones, Christopher V. Poulton, Michael R. Watts, D.L. Harame	2023	5
4	Fully Integrated Coherent LiDAR in 3D-Integrated Silicon Photonics/65nm CMOS Pavan Bhargava, 杨桃莲, Christopher V. Poulton, Jelena Notaroš, Ami Yaacobi, Erman Timurdogan, Christopher Baiocco, Nicholas M. Fahrenkopf, Seth Kruger, T. Ngai, Yukta Timalsina, Michael R. Watts, Vladimir Stojanović	2019	32
5	29.5 A Single-Chip Optical Phased Array in a 3D-Integrated Silicon Photonics/65nm CMOS Technology Taehwan Kim, Pavan Bhargava, Christopher V. Poulton, Jelena Notaroš, Ami Yaacobi, Erman Timurdogan, Christopher Baiocco, Nicholas M. Fahrenkopf, Seth Kruger, T. Ngai, Yukta Timalsina, Michael R. Watts, Vladimir Stojanović	2019	11
6	Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure Kausik Majumdar, Robert Clark, T. Ngai, Kandabara Tapily, Steven Consiglio, Eric Bersch, M Panek, 照子山本, Shahanaz Pervin, Guillermo Barreto Fong, Cory S. Wajda, G. J. Leusink, Harold M. H. Chong, V. Kaushik, J. C. Woicik, Chris Hobbs, P. D. Kirsch	2014	7
7	STLM: A Sidewall TLM Structure for Accurate Extraction of Ultralow Specific Contact Resistivity IEEE Electron Device Letters ·Kausik Majumdar, Dalmeet Singh Chawla, C. Huffman, M Panek, T. Ngai, Martha Alice Losada, L Labedzki, Wei Yip Loh, Martin Rodgers, Renita Azzahra, В. Э. Павлов, Chang Yong Kang, Chris Hobbs, Paul Kirsch	2013	17
8	Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities IEEE Electron Device Letters ·Kerem Akarvardar, Chadwin D. Young, Eliana Piccoli Zordan, Injo Ok, T. Ngai, Kah‐Wee Ang, Martin Rodgers, В. Э. Павлов, Prashant Majhi, Chris Hobbs, Paul Kirsch, Raj Jammy	2012	13
9	Simple FinFET gate doping technique for dipole-engineered Vt tuning and CET scaling T. Ngai, Chris Hobbs, Dmitry Veksler, K. Matthews, Kang Min Ok, Kerem Akarvardar, J. Stanikowski, Junkai Huang, Martin Rodgers, Dalmeet Singh Chawla, Sumeet Sachin Kumar, Chadwin D. Young, P. Majhi, S. C. Gausepohl, P. D. Kirsch, R. Jammy	2012	1
10	New insights into SILC-based life time extraction IRIS UNIMORE (University of Modena and Reggio Emilia) ·Chadwin D. Young, G. Bersuker, Minseok Jo, K. Matthews, 梶山美明, S. Deora, Kah‐Wee Ang, T. Ngai, C. Hobbs, P. D. Kirsch, Andrea Padovani, Luca Larcher	2012	6
11	Parasitic resistance reduction technology Kang Min Ok, W.Y. Loh, J. Stanikowski, Chadwin D. Young, P. Y. Hung, T. Ngai, Kerem Akarvardar, Chris Hobbs, R. Jammy	2011	3
12	Enhanced performance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node Kang Min Ok, Chadwin D. Young, W.Y. Loh, T. Ngai, S. Lian, Jungwoo Oh, Martin Rodgers, Stephen Earl Bennett, Renita Azzahra, Kunito Ohkubo, Shaohui Lin, Kerem Akarvardar, Casey Smith, C. Hobbs, P. D. Kirsch, R. Jammy	2010	8
13	Alternative approaches for high-k/metal gate CMOS: Low temperature process (gate last) and SiGe channel Kamol K Das, 陶炳勋, Maja Božičević Vrhovčak, Tapio Nevala, Jyi-Tsong Lin, T. Ngai, S. Lian, 博之若井, B. Taylor, P. D. Kirsch, R. Jammy	2010	4
14	MOS Capacitors on Epitaxial<tex>$hbox Ge hbox -- hbox Si_1-xhbox Ge_x$</tex>with High-<tex>$kappa$</tex>Dielectrics Using RPCVD IEEE Transactions on Electron Devices ·Xiaofeng Chen, Shalik Ram Joshi, Jianli Chen, T. Ngai, Sanjay K. Banerjee	2004	4
15	MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si Wenjie Qi, R. Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, K. Onishi, T. Ngai, S. Banerjee, J.C. Lee	2003	40
16	Enhanced concurrent error correcting arithmetic unit design using alternating logic T. Ngai, Chen He, Earl E. Swartzlander	2002	6
17	SiGe and Si PMOSFET's characteristics with ZrO/sub 2/ gate dielectric T. Ngai, 许楠, Xiaofeng Chen, Rajni Sharma, Denise A. Tatum, J.C. Lee, Sanjay K. Banerjee	2002	2
18	Improving SiO2/SiGe interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing Applied Physics Letters ·T. Ngai, Xiaofeng Chen, Jianli Chen, S. Banerjee	2002	10
19	Properties of gate quality silicon dioxide films deposited on Si–Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Rajni Sharma, Denise A. Tatum, T. Ngai, S. Banerjee	1999	12
20	Remote Plasma‐Assisted Deposition of Gate Quality Oxides Without the Use of a Preoxidation Step Journal of The Electrochemical Society ·Rajni Sharma, Denise A. Tatum, T. Ngai, S. Banerjee	1999	2

About T. Ngai

T. Ngai is a scholar working on Instrumentation, Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics and Electrochemistry, having authored 31 papers that have together received 441 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Photonic and Optical Devices (7 papers), Semiconductor materials and interfaces (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Semiconductor Lasers and Optical Devices (5 papers), Ferroelectric and Negative Capacitance Devices (4 papers) and Silicon Carbide Semiconductor Technologies (4 papers). The work is most often cited by research in Instrumentation (42 citations), Electrical and Electronic Engineering (407 citations), Atomic and Molecular Physics, and Optics (144 citations), Surfaces, Coatings and Films (16 citations) and Materials Chemistry (102 citations). T. Ngai has collaborated with scholars based in United States, Italy and Germany. Frequent co-authors include Rajni Sharma, Xiaofeng Chen, J. C. Lee, Sanjay K. Banerjee, Christopher V. Poulton, Seth Kruger, Michael R. Watts, Ami Yaacobi, Christopher Baiocco and Jelena Notaroš. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Scientific Reports, Solid-State Electronics and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact