Laegu Kang

1.8k total citations · 1 hit paper
27 papers, 1.3k citations indexed

About

Laegu Kang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Laegu Kang has authored 27 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 3 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Laegu Kang's work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). Laegu Kang is often cited by papers focused on Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). Laegu Kang collaborates with scholars based in United States, Germany and China. Laegu Kang's co-authors include R. Nieh, Byoung Hun Lee, Jack C. Lee, Yongjoo Jeon, Wenjie Qi, J.C. Lee, Sundararaman Gopalan, K. Onishi, Katsunori Onishi and K. Onishi and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Nature and Science of Sleep.

In The Last Decade

Laegu Kang

27 papers receiving 1.3k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

2000 523 citations Byoung Hun Lee, Laegu Kang et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by Laegu Kang

Since Specialization

Citations

This map shows the geographic impact of Laegu Kang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Laegu Kang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Laegu Kang more than expected).

Fields of papers citing papers by Laegu Kang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Laegu Kang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Laegu Kang. The network helps show where Laegu Kang may publish in the future.

Co-authorship network of co-authors of Laegu Kang

This figure shows the co-authorship network connecting the top 25 collaborators of Laegu Kang. A scholar is included among the top collaborators of Laegu Kang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Laegu Kang. Laegu Kang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Association Between Sleep Quality and Self-Efficacy Trajectories Among Pregnant Women: A Parallel Process Latent Growth Curve Model 2025 ·Nature and Science of Sleep ·(unknown), Yan Li, (unknown), (unknown), Qianwen Chen, Laegu Kang, Zengjie Ye	1
2	Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor 2017 ·Dina H. Triyoso, (unknown), K. Hempel, H.J. Tao, Fabian M. Koehler, Laegu Kang, A. Senthil Kumar, (unknown), J. Holt, (unknown), (unknown), Frank Ludwig, (unknown), J. Kluth, (unknown)	3
3	Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges 2016 ·Dina H. Triyoso, (unknown), J. Kluth, K. Hempel, M. Gribelyuk, Laegu Kang, Arvind Kumar, (unknown), P. Javorka, (unknown), (unknown), (unknown), J. Holt, (unknown), Ryan Sporer, (unknown)	9
4	(Invited) Factors Impacting Threshold Voltage in Advanced CMOS Integration: Gate Last (FINFET) vs. Gate First (FDSOI) 2015 ·ECS Transactions ·Dina H. Triyoso, Rick Carter, J. Kluth, S. Luning, (unknown), (unknown), (unknown), (unknown), (unknown), Laegu Kang, Ryan Sporer, Xiaobo Chen, (unknown), (unknown), Suraj Patil, Xing Zhang, Alex Chen, M. Togo, Rohit Pal	2
5	Avoiding plasma induced damage to gate oxide with conductive top film (CTF) on PECVD contact etch stop layer 2003 ·(unknown), (unknown), A. Perera, M. M. Turner, Fuqiang Huang, S.G.H. Anderson, Laegu Kang, (unknown), D. Menke, (unknown), (unknown)	5
6	MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si 2003 ·Wenjie Qi, R. Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, K. Onishi, T. Ngai, S. Banerjee, J.C. Lee	40
7	Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application 2003 ·Byoung Hun Lee, Laegu Kang, Wenjie Qi, R. Nieh, Yongjoo Jeon, Katsunori Onishi, J.C. Lee	81
8	MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics 2002 ·Laegu Kang, K. Onishi, (unknown), Byoung Hun Lee, Chan Kang, Wenjie Qi, R. Nieh, Sundararaman Gopalan, Rino Choi, J.C. Lee	47
9	Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon 2002 ·Wenjie Qi, R. Nieh, (unknown), Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, Sundararaman Gopalan, (unknown)	2
10	Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices 2002 ·Applied Physics Letters ·Chang Seok Kang, Katsunori Onishi, Laegu Kang, Jack C. Lee	2
11	Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics 2002 ·Wenjie Qi, R. Nieh, Byoung Hun Lee, K. Onishi, Laegu Kang, Yongjoo Jeon, J.C. Lee, V. Kaushik, (unknown), L. Prabhu, K. Eisenbeiser, J. Finder	17
12	Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 Å-12 Å) 2002 ·Byoung Hun Lee, Rino Choi, Laegu Kang, Sundararaman Gopalan, R. Nieh, K. Onishi, (unknown), Wenjie Qi, (unknown), J.C. Lee	41
13	Ultra thin high quality Ta/sub 2/O/sub 5/ gate dielectric prepared by in-situ rapid thermal processing 2002 ·H.F. Luan, (unknown), Laegu Kang, (unknown), Raymond N. Vrtis, David A. Roberts, D. L. Kwong	8
14	Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application 2000 ·Applied Physics Letters ·(unknown), R. Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, Jack C. Lee	150
15	Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric 2000 ·IEEE Electron Device Letters ·Laegu Kang, Byoung Hun Lee, Wenjie Qi, Yongjoo Jeon, R. Nieh, Sundararaman Gopalan, K. Onishi, J.C. Lee	202
16	Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application 2000 ·Applied Physics Letters ·(unknown), R. Nieh, (unknown), Byoung Hun Lee, Yongjoo Jeon, Laegu Kang, Katsunori Onishi, Jack C. Lee	88
17	Highly Reliable Thin Hafnium Oxide Gate Dielectric 1999 ·MRS Proceedings ·Laegu Kang, Byoung-Hun Lee, Wenjie Qi, Yongjoo Jeon, R. Nieh, Sundararaman Gopalan, Katsunori Onishi, Jack C. Lee	11
18	Study on ZrO₂ Deposited Directly on Si as an Alternative Gate Dielectric Material 1999 ·MRS Proceedings ·(unknown), R. Nieh, Byoung Hun Lee, (unknown), Laegu Kang, Katsunori Onishi, Jack C. Lee	2
19	High-K gate dielectrics 1999 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown), Byoung H. Lee, R. Nieh, Laegu Kang, Yongjoo Jeon, K. Onishi, Jack C. Lee	13
20	Tungsten silicide/titanium nitride compound gate for submicron CMOSFET 1990 ·(unknown), Laegu Kang, (unknown), (unknown), (unknown), Cheol Jin Lee, C.G. Hwang, D. Chin, (unknown)	11

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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