P. D. Kirsch

4.6k total citations
155 papers, 3.5k citations indexed

About

P. D. Kirsch is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. D. Kirsch has authored 155 papers receiving a total of 3.5k indexed citations (citations by other indexed papers that have themselves been cited), including 143 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 21 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. D. Kirsch's work include Semiconductor materials and devices (134 papers), Advancements in Semiconductor Devices and Circuit Design (89 papers) and Ferroelectric and Negative Capacitance Devices (69 papers). P. D. Kirsch is often cited by papers focused on Semiconductor materials and devices (134 papers), Advancements in Semiconductor Devices and Circuit Design (89 papers) and Ferroelectric and Negative Capacitance Devices (69 papers). P. D. Kirsch collaborates with scholars based in United States, South Korea and Italy. P. D. Kirsch's co-authors include G. Bersuker, John G. Ekerdt, D. C. Gilmer, R. Jammy, Luca Larcher, Andrea Padovani, Luca Vandelli, Dmitry Veksler, Manuel Quevedo-López and M. Porti and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

P. D. Kirsch

149 papers receiving 3.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. D. Kirsch United States 32 3.1k 1.0k 345 329 193 155 3.5k
Sang Mo Yang South Korea 29 1.2k 0.4× 2.3k 2.2× 342 1.0× 779 2.4× 71 0.4× 79 2.9k
L. Mariucci Italy 26 2.1k 0.7× 642 0.6× 220 0.6× 548 1.7× 41 0.2× 211 2.3k
Blanka Magyari-Köpe United States 27 2.1k 0.7× 1.4k 1.4× 382 1.1× 282 0.9× 197 1.0× 73 2.9k
Marie‐Paule Besland France 22 1.2k 0.4× 842 0.8× 202 0.6× 217 0.7× 137 0.7× 92 1.6k
Yeong‐Her Wang Taiwan 24 2.1k 0.7× 607 0.6× 247 0.7× 436 1.3× 185 1.0× 205 2.6k
Sergiy Krylyuk United States 25 1.8k 0.6× 1.5k 1.5× 696 2.0× 584 1.8× 69 0.4× 116 2.9k
K. Chan United States 23 2.2k 0.7× 1.1k 1.1× 575 1.7× 567 1.7× 67 0.3× 91 2.7k
A. Zenkevich Russia 24 1.6k 0.5× 1.3k 1.2× 262 0.8× 135 0.4× 160 0.8× 97 2.0k
D. C. Gilmer United States 35 4.4k 1.4× 1.5k 1.5× 384 1.1× 111 0.3× 656 3.4× 106 4.6k
G. Tallarida Italy 26 1.4k 0.5× 1.4k 1.4× 511 1.5× 218 0.7× 63 0.3× 91 2.1k

Countries citing papers authored by P. D. Kirsch

Since Specialization
Citations

This map shows the geographic impact of P. D. Kirsch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. D. Kirsch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. D. Kirsch more than expected).

Fields of papers citing papers by P. D. Kirsch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. D. Kirsch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. D. Kirsch. The network helps show where P. D. Kirsch may publish in the future.

Co-authorship network of co-authors of P. D. Kirsch

This figure shows the co-authorship network connecting the top 25 collaborators of P. D. Kirsch. A scholar is included among the top collaborators of P. D. Kirsch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. D. Kirsch. P. D. Kirsch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Koh, Donghyi, Todd W. Hudnall, Christopher W. Bielawski, et al.. (2014). Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer. Applied Physics Letters. 104(16). 163502–163502. 7 indexed citations
2.
Deora, S., et al.. (2014). Positive bias instability in gate-first and gate-last InGaAs channel n-MOSFETs. 7. 3C.5.1–3C.5.4. 9 indexed citations
3.
Deora, S., G. Bersuker, W.Y. Loh, et al.. (2013). Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs. IEEE Transactions on Device and Materials Reliability. 13(4). 507–514. 38 indexed citations
4.
Kang, Chang Yong, Daeho Ko, Dmitry Veksler, et al.. (2013). Comprehensive layout and process optimization study of Si and III-V technology for sub-7nm node. 5.3.1–5.3.4. 2 indexed citations
5.
Sohn, Chang-Woo, Chang Yong Kang, Rock‐Hyun Baek, et al.. (2012). Comparative study of geometry-dependent capacitances of planar FETs and double-gate FinFETs: Optimization and process variation. 1–2. 5 indexed citations
6.
Kwon, Hyuk-Min, Sang-Uk Park, Ga‐Won Lee, et al.. (2011). Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-$k$ Dielectric/Metal Gate. IEEE Electron Device Letters. 32(5). 686–688. 25 indexed citations
7.
Bersuker, G., D. C. Gilmer, Dekel Veksler, et al.. (2010). Metal oxide RRAM switching mechanism based on conductive filament microscopic properties. IRIS UNIMORE (University of Modena and Reggio Emilia). 19.6.1–19.6.4. 92 indexed citations
8.
Hill, Richard J., Joel Barnett, Jifu Huang, et al.. (2010). Self-aligned III-V MOSFETs heterointegrated on a 200 mm Si substrate using an industry standard process flow. 6.2.1–6.2.4. 31 indexed citations
9.
Oh, Jungwoo, Kyeong‐Sik Min, Byoung‐Gue Min, et al.. (2010). SiGe CMOS on (110) channel orientation with mobility boosters : Surface orientation, channel directions, and uniaxial strain. 39–40. 9 indexed citations
10.
Bersuker, G., Dmitry Veksler, D. C. Gilmer, et al.. (2010). Tunnel oxide degradation in TANOS devices and its origin. 50–51. 5 indexed citations
11.
Smith, Casey, Hemant Adhikari, Seng Hua Lee, et al.. (2009). Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node. 1–4. 9 indexed citations
12.
Huang, Jen‐Wei, P. D. Kirsch, Jungwoo Oh, et al.. (2009). Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe. IEEE Electron Device Letters. 30(3). 285–287. 17 indexed citations
13.
Hussain, Muhammad M., Chadwin D. Young, D. C. Gilmer, et al.. (2006). A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications. Symposium on VLSI Technology. 208–209. 1 indexed citations
14.
Loh, W.Y., Injo Ok, Greg Smith, et al.. (2006). Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. Symposium on VLSI Technology. 100–101. 7 indexed citations
15.
Quevedo-López, Manuel, P. D. Kirsch, Sitaraman Krishnan, et al.. (2006). Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling. 97. 113–116. 3 indexed citations
16.
Kang, Chang Yong, Rino Choi, Kwang‐Il Choi, et al.. (2006). A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (1hannel for Both N and PMOSFETs. 1–4. 26 indexed citations
17.
Kirsch, P. D. & John G. Ekerdt. (2001). Interfacial chemistry of the Ba/SiO x N y /Si(100) nanostructure. Journal of Vacuum Science and Technology. 19(1). 2222–2231. 8 indexed citations
18.
Kirsch, P. D. & Valerie Oosterveld. (2001). The Preparatory Commission for the International Criminal Court. Fordham international law journal. 25(3). 563. 9 indexed citations
19.
Kirsch, P. D. & John G. Ekerdt. (2001). Chemical and thermal reduction of thin films of copper (II) oxide and copper (I) oxide. Journal of Applied Physics. 90(8). 4256–4264. 85 indexed citations
20.
Kirsch, P. D. & John G. Ekerdt. (2001). Interfacial chemistry of the Ba/SiOxNy/Si(100) nanostructure. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(1). 207–214. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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