D. Roan

1.5k citations

20 papers · 1.1k indexed · h-index 14

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 19
- Advancements in Semiconductor Devices and Circuit Design 11
- Integrated Circuits and Semiconductor Failure Analysis 9
- Ferroelectric and Negative Capacitance Devices 9
- Advanced Memory and Neural Computing 1
- Thin-Film Transistor Technologies 1
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides 5
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 1
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films

Co-authors: Dina H. Triyoso R. I. Hegde B. E. White Philip J. Tobin S. Samavedam R. Garcia R. Rai R. Gregory
Cited by: Electrical and Electronic Engineering Materials Chemistry Electronic, Optical and Magnetic Materials
Journals: Journal of The Electrochemical Society (3 papers)Applied Physics Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States France

In The Last Decade

D. Roan

19 papers receiving 1.0k citations

Peers

Countries citing papers authored by D. Roan

Since Specialization

Citations

This map shows the geographic impact of D. Roan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Roan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Roan more than expected).

Fields of papers citing papers by D. Roan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Roan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Roan. The network helps show where D. Roan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Roan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Roan Line = papers co-authored together D. Roan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso,R. I. Hegde,Юсеф Н.Ю.,R. Gregory,C. Antonani,Marianne Canonico,D. Roan,E.A. Hebert,Graziella Pavon-Djavid,Jian Jiang,R. Rai,V. Kaushik,S. Samavedam,N. Rochat	2007	44
2	Challenges for PMOS Metal Gate Electrodes and Solutions for Low Power Applications J. Schaeffer,William J. Taylor,S. Samavedam,D. C. Gilmer,Dina H. Triyoso,R. I. Hegde,S. Kalpat,C. Capasso,Dijkmans Roger,M. W. Stoker,A. Haggag,D. Roan,Brian E. White	2007	2
3	Impact of Zr addition on properties of atomic layer deposited HfO2 Applied Physics Letters ·Dina H. Triyoso,R. I. Hegde,Юсеф Н.Ю.,D. Roan,Philip J. Tobin,S. Samavedam,B. E. White,R. Gregory,C. Antonani	2006	76
4	Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability R. I. Hegde,Dina H. Triyoso,S. Kalpat,S. Samavedam,Юсеф Н.Ю.,E. Luckowski,C. Capasso,D. C. Gilmer,M. Raymond,D. Roan,О.К. Тихомиров,L.B. La,E.A. Hebert,Xiaodong Wang,R. Gregory,Hari K. Somineni,Ji Jiang,芳夫大原,B. E. White	2006	1
5	LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks D. C. Gilmer,J. Schaeffer,William J. Taylor,舒小铃,Dina H. Triyoso,M. Raymond,D. Roan,Jeremy C. Smith,C. Capasso,R. I. Hegde,S. Samavedam	2006	5
6	Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition Journal of Applied Physics ·Dina H. Triyoso,R. I. Hegde,Stefan Zollner,Michael Ramon,S. Kalpat,R. Gregory,Augusto Iglesias,Jian Jiang,M. Raymond,R. Rai,D. Werho,D. Roan,B. E. White,Philip J. Tobin	2005	72
7	Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso,R. I. Hegde,J. M. Grant,Юсеф Н.Ю.,D. Roan,B. E. White,Philip J. Tobin	2005	39
8	Physical and Electrical Characteristics of HfO[sub 2] Gate Dielectrics Deposited by ALD and MOCVD Journal of The Electrochemical Society ·Dina H. Triyoso,M. Ramón,R. I. Hegde,D. Roan,R. Garcia,J. Baker,Katrine Pilely Hansen,Peter Fejes,B. E. White,N. Nakamura	2005	26
9	Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	135
10	Fermi level pinning at the polySi/metal oxide interface Chris Hobbs,L.M. Fonseca,V. Dhandapani,S. Samavedam,B. Taylor,Jennifer E. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,Margret Graf-Fuchs,R. Rai,Kouichi Kotaki,H.‐H. Tseng,Bruce White,Philip J. Tobin	2004	74
11	ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability H.‐H. Tseng,Michael Ramon,Kouichi Kotaki,Philip J. Tobin,Dina H. Triyoso,J. M. Grant,Kawi Boedisetio,D. Roan,S. Samavedam,D. C. Gilmer,S. Kalpat,Chris Hobbs,W. Taylor,Érick Soares dos Reis,B. E. White	2004	7
12	Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	182
13	Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso,R. I. Hegde,Jennifer E. Grant,Peter Fejes,Clare Smith,D. Roan,M. Ramón,D. Werho,R. Rai,L.B. La,J. Baker,Cristina Garza,Sang Tae Lee,B. E. White,Philip J. Tobin	2004	56
14	Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2] Journal of The Electrochemical Society ·Dina H. Triyoso,Clare Smith,D. Roan,M. Ramón,N. V. Edwards,R. Gregory,D. Werho,J. Kulik,Denih Agus Setia P,Elizabeth F. Irwin,Katrine Pilely Hansen,L.B. La,C. Hobbs,R. Garcia,J. Baker,B. E. White,Philip J. Tobin	2004	148
15	HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium Journal of The Electrochemical Society ·Юсеф Н.Ю.,N. V. Edwards,José Miguel Carrasco Gimeno,D. Roan,SA Feldman,R. Gregory,J. Kulik,Guo Haifen,(unknown),应立娟,Stefan Zollner,Philip J. Tobin,Bich-Yen Nguyen,R. Nieh,M. Ramón,V. Ramgopal Rao,R. I. Hegde,R. Rai,J. Baker,Yano Gen	2003	53
16	Compatibility of silicon gates with hafnium-based gate dielectrics Microelectronic Engineering ·D. C. Gilmer,R. I. Hegde,John P. Worgan,James A. Smith,Laurynas Šedvydis,R. Garcia,V. Dhandapani,Dina H. Triyoso,D. Roan,Alexander Franke,R. Rai,L. Prabhu,C. Hobbs,J. M. Grant,L.B. La,S. Samavedam,B. Taylor,H.‐H. Tseng,Philip J. Tobin	2003	21
17	50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate IEEE Transactions on Nanotechnology ·A. Vandooren,Rudolf Lange,Ana María Miranda Zavala,ラリーフェネル,L. Mathew,D. Kim,Aaron Thean,Mustofa Saeful Alamsyah,Zhong Shi,T. White,Yue‐Peng Zhou,J. Conner,L. Prabhu,Dina H. Triyoso,J. Schaeffer,D. Roan,Bich-Yen Nguyen,M. Orłowski,J. Mogab	2003	11
18	Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics Applied Physics Letters ·D. C. Gilmer,R. I. Hegde,John P. Worgan,R. Garcia,V. Dhandapani,Dina H. Triyoso,D. Roan,Alexander Franke,R. Rai,L. Prabhu,C. Hobbs,J. M. Grant,L.B. La,S. Samavedam,B. Taylor,H.‐H. Tseng,Philip J. Tobin	2002	64
19	Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. Schaeffer,S. Samavedam,D. C. Gilmer,V. Dhandapani,Philip J. Tobin,J. Mogab,Bich-Yen Nguyen,B. E. White,Thuy Rotunda,Hari K. Somineni,Kawi Boedisetio,R. Martín,M. V. Raymond,Ana María Miranda Zavala,L.B. La,James A. Smith,R. Garcia,D. Roan,M. Kottke,R. Gregory	2002	85
20	Technology Development Programs for the Advanced Turbine Systems Engine Ihor S. Diakunchak,R. L. Bannister,Joshua M. Kotfila,D. Roan	1996	8

About D. Roan

D. Roan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 20 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Electronic and Structural Properties of Oxides (5 papers), Advanced Memory and Neural Computing (1 paper), Copper Interconnects and Reliability (1 paper) and Thin-Film Transistor Technologies (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (417 citations) and Electronic, Optical and Magnetic Materials (87 citations). D. Roan has collaborated with scholars based in United States and France. Frequent co-authors include Dina H. Triyoso, R. I. Hegde, B. E. White, Philip J. Tobin, S. Samavedam, R. Garcia, R. Rai, R. Gregory, D. C. Gilmer and V. Dhandapani. Their work appears in journals such as Journal of The Electrochemical Society, Applied Physics Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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