D. Roan

1.5k total citations
20 papers, 1.1k citations indexed

About

D. Roan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials. According to data from OpenAlex, D. Roan has authored 20 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 1 paper in Mechanics of Materials. Recurrent topics in D. Roan's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). D. Roan is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Integrated Circuits and Semiconductor Failure Analysis (9 papers). D. Roan collaborates with scholars based in United States and France. D. Roan's co-authors include Dina H. Triyoso, R. I. Hegde, B. E. White, Philip J. Tobin, S. Samavedam, R. Garcia, R. Rai, R. Gregory, D. C. Gilmer and V. Dhandapani and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

D. Roan

19 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Roan United States 14 1.1k 417 146 87 55 20 1.1k
S. Samavedam United States 18 1.2k 1.2× 357 0.9× 199 1.4× 98 1.1× 77 1.4× 36 1.3k
Laegu Kang United States 12 1.3k 1.2× 509 1.2× 149 1.0× 146 1.7× 31 0.6× 27 1.3k
Antonio Rotondaro United States 16 927 0.9× 223 0.5× 150 1.0× 75 0.9× 46 0.8× 54 974
Yongjoo Jeon United States 13 765 0.7× 329 0.8× 107 0.7× 91 1.0× 31 0.6× 21 832
C. Hobbs United States 15 781 0.7× 287 0.7× 118 0.8× 71 0.8× 38 0.7× 46 826
M. Lemberger Germany 16 1.2k 1.1× 785 1.9× 110 0.8× 92 1.1× 51 0.9× 43 1.3k
H.D.B. Gottlob Germany 15 575 0.5× 258 0.6× 157 1.1× 62 0.7× 29 0.5× 48 620
Jae-Sung Roh South Korea 16 693 0.6× 430 1.0× 98 0.7× 162 1.9× 69 1.3× 57 789
L. Lamagna Italy 18 642 0.6× 468 1.1× 126 0.9× 104 1.2× 13 0.2× 45 729
H.C. Wen United States 14 666 0.6× 182 0.4× 162 1.1× 53 0.6× 44 0.8× 43 698

Countries citing papers authored by D. Roan

Since Specialization
Citations

This map shows the geographic impact of D. Roan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Roan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Roan more than expected).

Fields of papers citing papers by D. Roan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Roan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Roan. The network helps show where D. Roan may publish in the future.

Co-authorship network of co-authors of D. Roan

This figure shows the co-authorship network connecting the top 25 collaborators of D. Roan. A scholar is included among the top collaborators of D. Roan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Roan. D. Roan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Schaeffer, J., William J. Taylor, S. Samavedam, et al.. (2007). Challenges for PMOS Metal Gate Electrodes and Solutions for Low Power Applications. 2 indexed citations
2.
Triyoso, Dina H., R. I. Hegde, R. Gregory, et al.. (2007). Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(3). 845–852. 44 indexed citations
3.
Triyoso, Dina H., R. I. Hegde, D. Roan, et al.. (2006). Impact of Zr addition on properties of atomic layer deposited HfO2. Applied Physics Letters. 88(22). 76 indexed citations
4.
Gilmer, D. C., J. Schaeffer, William J. Taylor, et al.. (2006). LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks. 351–354. 5 indexed citations
5.
Hegde, R. I., Dina H. Triyoso, S. Kalpat, et al.. (2006). Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability. 1 indexed citations
6.
Triyoso, Dina H., R. I. Hegde, Stefan Zollner, et al.. (2005). Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition. Journal of Applied Physics. 98(5). 72 indexed citations
7.
Triyoso, Dina H., M. Ramón, R. I. Hegde, et al.. (2005). Physical and Electrical Characteristics of HfO[sub 2] Gate Dielectrics Deposited by ALD and MOCVD. Journal of The Electrochemical Society. 152(3). G203–G203. 26 indexed citations
8.
Triyoso, Dina H., R. I. Hegde, J. M. Grant, et al.. (2005). Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(1). 288–297. 39 indexed citations
9.
Hobbs, C. C., L. R. C. Fonseca, A. A. Knizhnik, et al.. (2004). Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II. IEEE Transactions on Electron Devices. 51(6). 978–984. 135 indexed citations
10.
Hobbs, Chris, L.M. Fonseca, V. Dhandapani, et al.. (2004). Fermi level pinning at the polySi/metal oxide interface. 9–10. 74 indexed citations
11.
Tseng, H.‐H., Michael Ramon, Philip J. Tobin, et al.. (2004). ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability. 4.1.1–4.1.4. 7 indexed citations
12.
Hobbs, C. C., L. R. C. Fonseca, A. A. Knizhnik, et al.. (2004). Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I. IEEE Transactions on Electron Devices. 51(6). 971–977. 182 indexed citations
13.
Triyoso, Dina H., R. I. Hegde, Jennifer E. Grant, et al.. (2004). Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(4). 2121–2127. 56 indexed citations
14.
Triyoso, Dina H., D. Roan, M. Ramón, et al.. (2004). Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]. Journal of The Electrochemical Society. 151(10). F220–F220. 148 indexed citations
15.
Gilmer, D. C., R. I. Hegde, James A. Smith, et al.. (2003). Compatibility of silicon gates with hafnium-based gate dielectrics. Microelectronic Engineering. 69(2-4). 138–144. 21 indexed citations
16.
Vandooren, A., Ana María Miranda Zavala, L. Mathew, et al.. (2003). 50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate. IEEE Transactions on Nanotechnology. 2(4). 324–328. 11 indexed citations
17.
Edwards, N. V., D. Roan, R. Gregory, et al.. (2003). HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium. Journal of The Electrochemical Society. 150(4). F67–F67. 53 indexed citations
18.
Schaeffer, J., S. Samavedam, D. C. Gilmer, et al.. (2002). Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(1). 11–17. 85 indexed citations
19.
Gilmer, D. C., R. I. Hegde, R. Garcia, et al.. (2002). Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics. Applied Physics Letters. 81(7). 1288–1290. 64 indexed citations
20.
Diakunchak, Ihor S., et al.. (1996). Technology Development Programs for the Advanced Turbine Systems Engine. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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