S. Deora

421 total citations
24 papers, 336 citations indexed

About

S. Deora is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Vision and Pattern Recognition. According to data from OpenAlex, S. Deora has authored 24 papers receiving a total of 336 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 1 paper in Computer Vision and Pattern Recognition. Recurrent topics in S. Deora's work include Semiconductor materials and devices (20 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). S. Deora is often cited by papers focused on Semiconductor materials and devices (20 papers), Ferroelectric and Negative Capacitance Devices (11 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). S. Deora collaborates with scholars based in United States, India and Italy. S. Deora's co-authors include Souvik Mahapatra, V. D. Maheta, Ahmad E. Islam, Muhammad A. Alam, G. Bersuker, P. D. Kirsch, K. Joshi, Ankit Jain, K. Matthews and D. C. Gilmer and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

S. Deora

24 papers receiving 326 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Deora United States 10 335 31 22 17 10 24 336
Osbert Cheng Taiwan 12 486 1.5× 51 1.6× 13 0.6× 8 0.5× 14 1.4× 87 497
B.-Y. Nguyen France 12 336 1.0× 48 1.5× 38 1.7× 27 1.6× 9 0.9× 25 342
P. Candelier France 12 323 1.0× 46 1.5× 14 0.6× 27 1.6× 17 1.7× 29 337
E. Vecchio Belgium 9 229 0.7× 58 1.9× 11 0.5× 23 1.4× 6 0.6× 16 243
Paul Hendrickx Belgium 9 220 0.7× 30 1.0× 8 0.4× 10 0.6× 13 1.3× 21 243
X. Li Singapore 10 399 1.2× 47 1.5× 18 0.8× 46 2.7× 16 1.6× 19 411
S. Cimino United States 10 323 1.0× 51 1.6× 16 0.7× 15 0.9× 6 0.6× 33 332
Wangyong Chen China 9 265 0.8× 43 1.4× 12 0.5× 9 0.5× 8 0.8× 52 281
Zijian Wang China 6 63 0.2× 33 1.1× 17 0.8× 16 0.9× 5 0.5× 23 99
O. Golonzka United States 6 178 0.5× 16 0.5× 9 0.4× 15 0.9× 13 1.3× 6 183

Countries citing papers authored by S. Deora

Since Specialization
Citations

This map shows the geographic impact of S. Deora's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Deora with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Deora more than expected).

Fields of papers citing papers by S. Deora

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Deora. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Deora. The network helps show where S. Deora may publish in the future.

Co-authorship network of co-authors of S. Deora

This figure shows the co-authorship network connecting the top 25 collaborators of S. Deora. A scholar is included among the top collaborators of S. Deora based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Deora. S. Deora is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Deora, S.. (2015). Reliability challenges in resistive switching memories technology. 7–12. 1 indexed citations
2.
Veksler, Dmitry, G. Bersuker, B. Butcher, et al.. (2014). Evaluation of variability and RTN in scaled RRAM. 52–52. 1 indexed citations
3.
Deora, S., et al.. (2014). Positive bias instability in gate-first and gate-last InGaAs channel n-MOSFETs. 7. 3C.5.1–3C.5.4. 9 indexed citations
4.
Deora, S., G. Bersuker, K. Matthews, D. C. Gilmer, & P. D. Kirsch. (2014). AC Variability and Endurance Measurement Technique for Resistive Switching Memories. IEEE Transactions on Device and Materials Reliability. 14(1). 300–303. 8 indexed citations
5.
Deora, S., G. Bersuker, W.Y. Loh, et al.. (2013). Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs. IEEE Transactions on Device and Materials Reliability. 13(4). 507–514. 38 indexed citations
6.
Deora, S., G. Bersuker, D. C. Gilmer, et al.. (2013). Statistical assessment of endurance degradation in high and low resistive states of the HfO<inf>2</inf>-based RRAM. MY.2.1–MY.2.5. 7 indexed citations
7.
Shrestha, Pragya R., J. P. Campbell, Kin P. Cheung, et al.. (2013). Dependence of the filament resistance on the duration of current overshoot. 55–58. 7 indexed citations
9.
Deora, S., G. Bersuker, Chadwin D. Young, et al.. (2012). PBTI improvement in gate last HfO<inf>2</inf> gate dielectric nMOSFET due to Zr incorporation. 1–2. 1 indexed citations
10.
Young, Chadwin D., G. Bersuker, Minseok Jo, et al.. (2012). New insights into SILC-based life time extraction. IRIS UNIMORE (University of Modena and Reggio Emilia). 5D.3.1–5D.3.5. 6 indexed citations
11.
12.
Veksler, Dmitry, G. Bersuker, Bhaswar Chakrabarti, et al.. (2012). Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics. 9.6.1–9.6.4. 45 indexed citations
13.
Mahapatra, Souvik, Ahmad E. Islam, S. Deora, et al.. (2011). A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery. 6A.3.1–6A.3.10. 85 indexed citations
14.
Deora, S., et al.. (2011). Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs. IEEE Electron Device Letters. 32(3). 255–257. 17 indexed citations
15.
Mahapatra, Souvik, Ahmad E. Islam, S. Deora, et al.. (2011). Characterization and modeling of NBTI stress, recovery, material dependence and AC degradation using R-D framework. 1–7. 7 indexed citations
16.
Deora, S., et al.. (2011). Development of a Novel Ultrafast Direct Threshold Voltage $(\hbox{UF-DV}_{T})$ Technique to Study NBTI Stress and Recovery. IEEE Transactions on Electron Devices. 58(10). 3506–3513. 7 indexed citations
17.
Deora, S., V. D. Maheta, & Souvik Mahapatra. (2010). NBTI lifetime prediction in SiON p-MOSFETs by H/H2 Reaction-Diffusion(RD) and dispersive hole trapping model. DSpace (IIT Bombay). 1105–1114. 8 indexed citations
18.
Mahapatra, Souvik, V. D. Maheta, S. Deora, et al.. (2009). Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs. ECS Transactions. 19(2). 243–263. 2 indexed citations
19.
Deora, S., V. D. Maheta, Ahmad E. Islam, Muhammad A. Alam, & Souvik Mahapatra. (2009). A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETs. IEEE Electron Device Letters. 30(9). 978–980. 12 indexed citations
20.
Deora, S., V. D. Maheta, G. Bersuker, et al.. (2008). A Comparative NBTI Study of $\hbox{HfO}_{2}$, $\hbox{HfSiO}_{x}$, and SiON p-MOSFETs Using UF-OTF $I_{\rm DLIN}$ Technique. IEEE Electron Device Letters. 30(2). 152–154. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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