Chadwin D. Young

5.0k total citations
223 papers, 3.8k citations indexed

About

Chadwin D. Young is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Chadwin D. Young has authored 223 papers receiving a total of 3.8k indexed citations (citations by other indexed papers that have themselves been cited), including 207 papers in Electrical and Electronic Engineering, 48 papers in Materials Chemistry and 22 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Chadwin D. Young's work include Semiconductor materials and devices (178 papers), Advancements in Semiconductor Devices and Circuit Design (131 papers) and Ferroelectric and Negative Capacitance Devices (76 papers). Chadwin D. Young is often cited by papers focused on Semiconductor materials and devices (178 papers), Advancements in Semiconductor Devices and Circuit Design (131 papers) and Ferroelectric and Negative Capacitance Devices (76 papers). Chadwin D. Young collaborates with scholars based in United States, South Korea and Ireland. Chadwin D. Young's co-authors include G. Bersuker, Rino Choi, Dawei Heh, Byoung Hun Lee, Jiyoung Kim, George Brown, Tai‐Li Tsou, Robert M. Wallace, Si Joon Kim and Peng Zhao and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Chadwin D. Young

215 papers receiving 3.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chadwin D. Young United States 33 3.3k 1.3k 321 205 180 223 3.8k
Ming-Han Liao Taiwan 22 1.8k 0.5× 1.0k 0.8× 306 1.0× 189 0.9× 143 0.8× 118 2.1k
Xianghua Wang China 19 786 0.2× 603 0.5× 312 1.0× 127 0.6× 358 2.0× 69 1.5k
M. Hong Taiwan 20 1.2k 0.4× 653 0.5× 188 0.6× 320 1.6× 369 2.0× 74 1.5k
Hongwei Hu China 19 869 0.3× 846 0.6× 256 0.8× 70 0.3× 63 0.3× 45 1.4k
M. Márquez United States 21 1.3k 0.4× 486 0.4× 1.2k 3.8× 123 0.6× 423 2.4× 34 2.5k
A. Loni United Kingdom 27 1.1k 0.3× 1.3k 1.0× 1.1k 3.3× 437 2.1× 64 0.4× 76 1.8k
Patrick C. Lewis Canada 12 909 0.3× 669 0.5× 1.8k 5.5× 79 0.4× 103 0.6× 22 2.2k
Dheeraj Jain India 19 493 0.1× 913 0.7× 435 1.4× 197 1.0× 182 1.0× 58 1.4k
Jifeng Sun United States 23 834 0.3× 2.3k 1.7× 80 0.2× 230 1.1× 763 4.2× 54 2.7k
Jiaxin Zhao China 23 1.8k 0.6× 1.3k 1.0× 411 1.3× 1.1k 5.2× 212 1.2× 67 2.6k

Countries citing papers authored by Chadwin D. Young

Since Specialization
Citations

This map shows the geographic impact of Chadwin D. Young's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chadwin D. Young with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chadwin D. Young more than expected).

Fields of papers citing papers by Chadwin D. Young

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chadwin D. Young. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chadwin D. Young. The network helps show where Chadwin D. Young may publish in the future.

Co-authorship network of co-authors of Chadwin D. Young

This figure shows the co-authorship network connecting the top 25 collaborators of Chadwin D. Young. A scholar is included among the top collaborators of Chadwin D. Young based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chadwin D. Young. Chadwin D. Young is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Wenhao, Xiangyu Zhu, Chris Smith, et al.. (2025). Bismuth oxychloride as a van der Waals dielectric for 2D electronics. Nanotechnology. 36(18). 185201–185201.
2.
Fink, Jeffrey C., T. S. Moise, R. Baumann, et al.. (2024). Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation. 1–6. 1 indexed citations
3.
Bryce, Robert, et al.. (2023). A Simulation Tool for Exploring Ammunition Stockpile Dynamics. 38–49.
4.
5.
Haroldson, Ross, et al.. (2022). Ultrasensitive Perovskite Photodetector Achieved When Configured with a Si Metal Oxide Semiconductor Field‐Effect Transistor. SHILAP Revista de lepidopterología. 4(1). 4 indexed citations
6.
Kim, Si Joon, Jaidah Mohan, Harrison Sejoon Kim, et al.. (2020). A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films. Materials. 13(13). 2968–2968. 36 indexed citations
7.
Wang, Honglei, Peng Zhao, Xuan Zeng, Chadwin D. Young, & Walter Hu. (2019). High-stability pH sensing with a few-layer MoS 2 field-effect transistor. Nanotechnology. 30(37). 375203–375203. 24 indexed citations
8.
Lenahan, Patrick M., et al.. (2018). A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy. IEEE Transactions on Nuclear Science. 66(1). 428–436. 15 indexed citations
9.
Zhao, Peng, Angelica Azcatl, Pavel Bolshakov, et al.. (2018). Evaluation of border traps and interface traps in HfO 2 /MoS 2 gate stacks by capacitance–voltage analysis. 2D Materials. 5(3). 31002–31002. 78 indexed citations
10.
Bolshakov, Pavel, Peng Zhao, Christopher M. Smyth, et al.. (2017). Test structures for understanding the impact of ultra-high vacuum metal deposition on top-gate MoS<inf>2</inf> field-effect-transistors. 5. 1–4. 1 indexed citations
11.
Kim, Dae-Hyun, Tae‐Woo Kim, Richard J. Hill, et al.. (2013). High-Speed E-Mode InAs QW MOSFETs With $\hbox{Al}_{2} \hbox{O}_{3}$ Insulator for Future RF Applications. IEEE Electron Device Letters. 34(2). 196–198. 14 indexed citations
12.
Veksler, Dmitry, G. Bersuker, Sergey Rumyantsev, et al.. (2010). Understanding noise measurements in MOSFETs: the role of traps structural relaxation. 73–79. 19 indexed citations
13.
Smith, Casey, Hemant Adhikari, Seng Hua Lee, et al.. (2009). Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node. 1–4. 9 indexed citations
14.
Young, Chadwin D., et al.. (2009). Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. Microelectronics Reliability. 49(5). 495–498. 13 indexed citations
15.
Min, K. S., Chang Yong Kang, Sung Woo Kim, et al.. (2008). Plasma induced damage of aggressively scaled gate dielectric (EOT &#x226A; 1.0nm) in metal gate/high-k dielectric CMOSFETs. 723–724. 10 indexed citations
16.
17.
Cassar, May, et al.. (2006). Predicting and Managing the Effects of Climate Change on World Heritage A joint report from the World Heritage Centre, its Advisory Bodies, and a broad group of experts to the 30th session of the World Heritage Committee, Vilnius. UCL Discovery (University College London). 15 indexed citations
18.
Hussain, Muhammad M., Chadwin D. Young, D. C. Gilmer, et al.. (2006). A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications. Symposium on VLSI Technology. 208–209. 1 indexed citations
19.
Sim, J.H., Rino Choi, Byoung Hun Lee, et al.. (2005). Trapping/De-Trapping Gate Bias Dependence of Hf-Silicate Dielectrics with Poly and TiN Gate Electrode. Japanese Journal of Applied Physics. 44(4S). 2420–2420. 15 indexed citations
20.
Bersuker, G., Joel Barnett, Brendan Foran, et al.. (2004). Interfacial Layer-Induced Mobility Degradation in High-kTransistors. Japanese Journal of Applied Physics. 43(11B). 7899–7902. 60 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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