N. Rochat

1.7k total citations
121 papers, 1.3k citations indexed

About

N. Rochat is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Rochat has authored 121 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 98 papers in Electrical and Electronic Engineering, 37 papers in Materials Chemistry and 31 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Rochat's work include Semiconductor materials and devices (68 papers), GaN-based semiconductor devices and materials (20 papers) and Copper Interconnects and Reliability (20 papers). N. Rochat is often cited by papers focused on Semiconductor materials and devices (68 papers), GaN-based semiconductor devices and materials (20 papers) and Copper Interconnects and Reliability (20 papers). N. Rochat collaborates with scholars based in France, Switzerland and United States. N. Rochat's co-authors include Christophe Licitra, Amal Chabli, Jérôme Le Perchec, P. Mur, R. Espiau de Lamaëstre, Michel Olivier, F. Bertin, Yohan Désières, E. Martínez and Jean‐Paul Barnes and has published in prestigious journals such as SHILAP Revista de lepidopterología, ACS Nano and Applied Physics Letters.

In The Last Decade

N. Rochat

118 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Rochat France 20 1.0k 517 301 292 274 121 1.3k
Kikuo Yamabe Japan 21 1.7k 1.6× 797 1.5× 268 0.9× 189 0.6× 252 0.9× 180 1.9k
Chao Zhao China 26 1.8k 1.7× 729 1.4× 323 1.1× 232 0.8× 423 1.5× 185 2.2k
Majid Ghanaatshoar Iran 22 735 0.7× 710 1.4× 291 1.0× 184 0.6× 504 1.8× 111 1.6k
E. Vasco Spain 19 637 0.6× 965 1.9× 375 1.2× 251 0.9× 227 0.8× 66 1.3k
Nobuyuki Ikarashi Japan 25 1.3k 1.2× 503 1.0× 325 1.1× 165 0.6× 453 1.7× 134 1.7k
Jean‐François de Marneffe Belgium 18 924 0.9× 359 0.7× 549 1.8× 153 0.5× 141 0.5× 103 1.2k
Kurt G. Eyink United States 16 464 0.4× 685 1.3× 157 0.5× 302 1.0× 238 0.9× 98 1.1k
R. Droopad United States 19 978 0.9× 1.1k 2.2× 456 1.5× 241 0.8× 389 1.4× 44 1.6k
Е. В. Убыйвовк Russia 18 364 0.4× 520 1.0× 257 0.9× 332 1.1× 320 1.2× 113 1.1k
J.K.N. Lindner Germany 20 751 0.7× 574 1.1× 123 0.4× 210 0.7× 265 1.0× 124 1.2k

Countries citing papers authored by N. Rochat

Since Specialization
Citations

This map shows the geographic impact of N. Rochat's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Rochat with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Rochat more than expected).

Fields of papers citing papers by N. Rochat

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Rochat. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Rochat. The network helps show where N. Rochat may publish in the future.

Co-authorship network of co-authors of N. Rochat

This figure shows the co-authorship network connecting the top 25 collaborators of N. Rochat. A scholar is included among the top collaborators of N. Rochat based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Rochat. N. Rochat is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rochat, N., et al.. (2024). GaN/InGaN LED Sidewall Defects Analysis by Cathodoluminescence and Photosensitive Kelvin Probe Force Microscopy. ACS Photonics. 11(5). 2097–2104. 3 indexed citations
2.
3.
Nolot, Emmanuel, F. Aussenac, Nicolas Bernier, et al.. (2024). Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature. physica status solidi (RRL) - Rapid Research Letters. 1 indexed citations
4.
Sakowski, Konrad, Łukasz Borowik, N. Rochat, et al.. (2024). On method of estimating recombination rates by analysis of time-resolved luminescence. Journal of Luminescence. 269. 120473–120473. 2 indexed citations
5.
Hönicke, Philipp, et al.. (2024). Reference-free x-ray fluorescence analysis with a micrometer-sized incident beam. Nanotechnology. 35(28). 285702–285702. 1 indexed citations
6.
Martin, M., Hervé Roussel, Jean‐Luc Deschanvres, et al.. (2024). Spectroscopic investigation of oxidation in GaSe 2D layered materials. Microelectronic Engineering. 294. 112256–112256. 4 indexed citations
7.
Houard, Jonathan, N. Rochat, Enrico Di Russo, et al.. (2023). The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures. Microscopy and Microanalysis. 29(2). 451–458. 1 indexed citations
8.
Buckley, Julien, et al.. (2023). Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode. Microelectronic Engineering. 274. 111975–111975. 4 indexed citations
9.
Rochat, N., et al.. (2023). Kelvin Probe Force Microscopy under Variable Illumination: A Novel Technique To Unveil Charge Carrier Dynamics in GaN. The Journal of Physical Chemistry C. 127(26). 12727–12734. 1 indexed citations
10.
Pargon, E., Guillaume Gay, Camille Petit‐Etienne, et al.. (2021). Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls. Micro and Nano Engineering. 11. 100083–100083. 6 indexed citations
11.
12.
Bernard, M., N. Rochat, D. Rouchon, et al.. (2020). Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability. HAL (Le Centre pour la Communication Scientifique Directe). 1–4. 7 indexed citations
13.
Gros‐Jean, M., et al.. (2018). Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer. HAL (Le Centre pour la Communication Scientifique Directe). 1 indexed citations
14.
Baron, T., M. Martin, J. Moeyaert, et al.. (2014). Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices. Applied Physics Letters. 104(26). 39 indexed citations
15.
Grampeix, H., G. Molas, M. Bocquet, et al.. (2007). Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories. ECS Transactions. 11(7). 213–225. 3 indexed citations
16.
Possémé, N., et al.. (2004). Etching of porous SiOCH materials in fluorocarbon-based plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(6). 2772–2784. 45 indexed citations
17.
Rochat, N., et al.. (2003). Infrared spectroscopy of high k thin layer by multiple internal reflection and attenuated total reflection. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2961–2965. 14 indexed citations
18.
Rouchon, D., et al.. (2002). Study of ultrathin silicon oxide films by FTIR‐ATR and ARXPS after wet chemical cleaning processes. Surface and Interface Analysis. 34(1). 445–450. 28 indexed citations
19.
Marthon, S., et al.. (2001). Detection and Identification of Organic Contamination on Silicon Substrates. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 76-77. 111–114. 4 indexed citations
20.
Olivier, Michel, et al.. (1999). Infrared Study of Hydrogen in Ultra-Thin Silicon Nitride Films Using Multiple Internal Reflection Spectroscopy (MIR) in 200 mm Silicon Wafers. physica status solidi (a). 175(1). 137–143. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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