Dmitry Veksler

3.4k total citations · 1 hit paper
103 papers, 2.6k citations indexed

About

Dmitry Veksler is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Dmitry Veksler has authored 103 papers receiving a total of 2.6k indexed citations (citations by other indexed papers that have themselves been cited), including 97 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in Dmitry Veksler's work include Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Ferroelectric and Negative Capacitance Devices (22 papers). Dmitry Veksler is often cited by papers focused on Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (41 papers) and Ferroelectric and Negative Capacitance Devices (22 papers). Dmitry Veksler collaborates with scholars based in United States, Italy and Russia. Dmitry Veksler's co-authors include M. S. Shur, G. Bersuker, Luca Larcher, D. C. Gilmer, Andrea Padovani, P. D. Kirsch, F. Teppe, Yunqing Chen, V. Yu. Kachorovskii and W. Knap and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Dmitry Veksler

99 papers receiving 2.5k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Ultra-fast switching memristors based on two-dimensional materials

2024 125 citations S. S. Teja Nibhanupudi, Anupam Roy et al. Nature Communications profile →

Peers

Countries citing papers authored by Dmitry Veksler

Since Specialization

Citations

This map shows the geographic impact of Dmitry Veksler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dmitry Veksler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dmitry Veksler more than expected).

Fields of papers citing papers by Dmitry Veksler

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dmitry Veksler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dmitry Veksler. The network helps show where Dmitry Veksler may publish in the future.

Co-authorship network of co-authors of Dmitry Veksler

This figure shows the co-authorship network connecting the top 25 collaborators of Dmitry Veksler. A scholar is included among the top collaborators of Dmitry Veksler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dmitry Veksler. Dmitry Veksler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Ultra-fast switching memristors based on two-dimensional materials breakdown → 2024 ·Nature Communications ·S. S. Teja Nibhanupudi, Anupam Roy, Dmitry Veksler, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Jamie H. Warner, Jaydeep P. Kulkarni, G. Bersuker, Sanjay K. Banerjee	125
2	The Brane Craft Phase II Program: Redefining Spacecraft Design and Applications 2019 ·Utah State Research and Scholarship (Utah State University) ·Siegfried Janson, Adam Bushmaker, (unknown), Dmitry Veksler, (unknown)	1
3	Total Ionizing Dose Effects on TiN/Ti/HfO₂/TiN Resistive Random Access Memory Studied via Electrically Detected Magnetic Resonance 2018 ·IEEE Transactions on Nuclear Science ·(unknown), Patrick M. Lenahan, (unknown), Dmitry Veksler, Jason T. Ryan, J. P. Campbell	9
4	Microwave Monitoring of Atmospheric Corrosion of Interconnects 2018 ·ECS Journal of Solid State Science and Technology ·(unknown), Dmitry Veksler, Christopher E. Sunday, S. Moreau, D. Bouchu, Yaw S. Obeng	8
5	Impact of RRAM Read Fluctuations on the Program-Verify Approach 2017 ·IEEE Electron Device Letters ·(unknown), Dmitry Veksler, Pragya R. Shrestha, J. P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung	18
6	Local Field Effect on Charge-Capture/Emission Dynamics 2017 ·IEEE Transactions on Electron Devices ·Kin P. Cheung, Dmitry Veksler, J. P. Campbell	3
7	Microwave evaluation of electromigration susceptibility in advanced interconnects 2017 ·Journal of Applied Physics ·Christopher E. Sunday, Dmitry Veksler, Kin P. Cheung, Yaw S. Obeng	1
8	Analysis and Control of RRAM Overshoot Current 2017 ·IEEE Transactions on Electron Devices ·Pragya R. Shrestha, (unknown), J. P. Campbell, Jason T. Ryan, Dmitry Veksler, Helmut Baumgart, Kin P. Cheung	21
9	InGaAs Inversion Layer Mobility and Interface Trap Density From Gated Hall Measurements 2016 ·IEEE Electron Device Letters ·(unknown), Dmitry Veksler, (unknown), Michail M. Yakimov, Vadim Tokranov, S. Oktyabrsky	5
10	A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors 2015 ·IEEE Transactions on Electron Devices ·Yuan Taur, Hanping Chen, Qian Xie, Jaesoo Ahn, Paul C. McIntyre, Dennis Lin, Abhitosh Vais, Dmitry Veksler	7
11	Evaluation of variability and RTN in scaled RRAM 2014 ·Dmitry Veksler, G. Bersuker, B. Butcher, D. C. Gilmer, K. Matthews, S. Deora	1
12	L_g = 100 nm In_0.7Ga_0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer 2014 ·Applied Physics Letters ·Donghyi Koh, (unknown), (unknown), (unknown), Todd W. Hudnall, Christopher W. Bielawski, W. Maszara, Dmitry Veksler, D. C. Gilmer, P. D. Kirsch, S. Banerjee	7
13	Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs 2013 ·IEEE Transactions on Device and Materials Reliability ·S. Deora, G. Bersuker, W.Y. Loh, Dmitry Veksler, K. Matthews, (unknown), (unknown), Richard J. Hill, (unknown), (unknown), C. Hobbs, P. D. Kirsch	38
14	Comprehensive layout and process optimization study of Si and III-V technology for sub-7nm node 2013 ·Chang Yong Kang, (unknown), (unknown), Daeho Ko, (unknown), (unknown), (unknown), Dmitry Veksler, G. Bersuker, (unknown), Chris Hobbs, P. D. Kirsch	2
15	Multi-technique study of defect generation in high-k gate stacks 2012 ·Dmitry Veksler, G. Bersuker, Himanshu Madan, Luca Vandelli, (unknown), K. Matthews, Chadwin D. Young, Suman Datta, C. Hobbs, P. D. Kirsch	6
16	Understanding noise measurements in MOSFETs: the role of traps structural relaxation 2010 ·Dmitry Veksler, G. Bersuker, Sergey Rumyantsev, M. S. Shur, (unknown), Chadwin D. Young, K. Y. Lim, W. Taylor, R. Jammy	19
17	Tunnel oxide degradation in TANOS devices and its origin 2010 ·(unknown), G. Bersuker, (unknown), Dmitry Veksler, (unknown), D. C. Gilmer, Nilesh Goel, Chan Kang, Chadwin D. Young, Mau-Chung Frank Chang, (unknown), (unknown), P. D. Kirsch, R. Jammy	5
18	Modeling Of Thin Film Transistors with Non-Ideal Contacts 2007 ·ECS Transactions ·M. S. Shur, Dmitry Veksler, (unknown), A. Koudymov, Trond Ytterdal, Benjamı́n Iñı́guez, W. B. Jackson	1
19	Compact Iterative Field Effect Transistor Model 2006 ·TechConnect Briefs ·M. S. Shur, (unknown), Dmitry Veksler, Trond Ytterdal, Benjamı́n Iñı́guez, W. B. Jackson	0
20	Spectroscopic characterization of explosives in the far-infrared region 2004 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Yunqing Chen, Haibo Liu, Yanqing Deng, Dmitry Veksler, M. S. Shur, Xicheng Zhang, (unknown), Michael J. Fitch, Robert Osiander, (unknown), James B. Spicer	53

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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