K. Reid

630 total citations
22 papers, 381 citations indexed

About

K. Reid is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, K. Reid has authored 22 papers receiving a total of 381 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 5 papers in Condensed Matter Physics and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in K. Reid's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Semiconductor Quantum Structures and Devices (5 papers). K. Reid is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Semiconductor Quantum Structures and Devices (5 papers). K. Reid collaborates with scholars based in United States and Japan. K. Reid's co-authors include B. Maiti, Philip J. Tobin, Sergio A. Ajuria, Rama I. Hegde, S. M. Bedair, B. T. McDermott, R. I. Hegde, N. A. El-Masry, W. M. Duncan and Xin Yin and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Langmuir.

In The Last Decade

K. Reid

21 papers receiving 366 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Reid United States 8 320 168 91 37 37 22 381
G. Weidner Germany 10 281 0.9× 171 1.0× 72 0.8× 19 0.5× 37 1.0× 37 315
Tsunehiro Ino Japan 11 447 1.4× 152 0.9× 80 0.9× 22 0.6× 44 1.2× 27 487
L. Trombetta United States 9 311 1.0× 94 0.6× 72 0.8× 63 1.7× 49 1.3× 20 340
Gérard Guillot France 10 274 0.9× 139 0.8× 136 1.5× 29 0.8× 79 2.1× 50 370
Igor Krylov Israel 12 390 1.2× 172 1.0× 96 1.1× 50 1.4× 42 1.1× 39 429
C. Ance France 11 359 1.1× 242 1.4× 199 2.2× 15 0.4× 27 0.7× 35 425
K. P. Bastos Brazil 11 296 0.9× 143 0.9× 44 0.5× 33 0.9× 47 1.3× 29 336
H. W. Krautter United States 8 314 1.0× 208 1.2× 69 0.8× 8 0.2× 78 2.1× 12 362
Hervé Peyre France 12 331 1.0× 93 0.6× 101 1.1× 50 1.4× 98 2.6× 55 372
J. W. Lee United States 10 262 0.8× 66 0.4× 139 1.5× 122 3.3× 46 1.2× 18 318

Countries citing papers authored by K. Reid

Since Specialization
Citations

This map shows the geographic impact of K. Reid's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Reid with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Reid more than expected).

Fields of papers citing papers by K. Reid

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Reid. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Reid. The network helps show where K. Reid may publish in the future.

Co-authorship network of co-authors of K. Reid

This figure shows the co-authorship network connecting the top 25 collaborators of K. Reid. A scholar is included among the top collaborators of K. Reid based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Reid. K. Reid is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Driver, M. Sky, et al.. (2016). Atomic Layer Epitaxy of h-BN(0001) Multilayers on Co(0001) and Molecular Beam Epitaxy Growth of Graphene on h-BN(0001)/Co(0001). Langmuir. 32(11). 2601–2607. 55 indexed citations
2.
Reid, K., et al.. (2008). Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate. Thin Solid Films. 517(8). 2712–2718. 7 indexed citations
3.
Reid, K., et al.. (2006). Development of Aluminum Nitride by Molecular Layer Deposition using Trimethylaluminum and Ammonia. ECS Meeting Abstracts. MA2006-01(23). 795–795. 1 indexed citations
4.
Tsui, Pei-Ling, M. Orłowski, Shih-Wei Sun, et al.. (2002). Suppression of MOSFET reverse short channel effect by N/sub 2/O gate poly reoxidation process. 501–504. 1 indexed citations
5.
6.
7.
Hobbs, Chris, R. I. Hegde, B. Maiti, et al.. (1999). Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation. 133–134. 2 indexed citations
8.
Hobbs, C., R. I. Hegde, B. Maiti, et al.. (1999). Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation. MRS Proceedings. 567. 1 indexed citations
9.
Hamilton, Richard F., et al.. (1999). MOCVD of High-K Dielectrics and Conductive Metal Nitride Thin Films. MRS Proceedings. 606. 1 indexed citations
10.
Hegde, Rama I., B. Maiti, S. Raghaw, K. Reid, & Philip J. Tobin. (1998). Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric. Journal of The Electrochemical Society. 145(1). L13–L15. 6 indexed citations
11.
Maiti, B., Philip J. Tobin, K. Reid, et al.. (1996). Oxynitride gate dielectric grown in nitric oxide (NO): the effect of reoxidation on dielectric reliability of the active edge. IEEE Electron Device Letters. 17(6). 279–281. 10 indexed citations
12.
Reid, K., et al.. (1995). High Temperature Thermal Processing for Ulsi Applications. MRS Proceedings. 387. 2 indexed citations
13.
Hegde, Rama I., Philip J. Tobin, K. Reid, B. Maiti, & Sergio A. Ajuria. (1995). Growth and surface chemistry of oxynitride gate dielectric using nitric oxide. Applied Physics Letters. 66(21). 2882–2884. 117 indexed citations
14.
Okada, Yoshio, Philip J. Tobin, K. Reid, Rama I. Hegde, & Sergio A. Ajuria. (1994). Uniformity of the  N 2 O  Furnace Oxynitride Process for the Formation of Thin Tunnel Dielectrics. Journal of The Electrochemical Society. 141(12). 3500–3504. 2 indexed citations
15.
Reid, K., A. F. Myers, N. A. El-Masry, & S. M. Bedair. (1993). The impact of short exposure times on the ALE self-limiting process: potential mechanisms. Thin Solid Films. 225(1-2). 59–63. 6 indexed citations
16.
Reid, K., et al.. (1991). Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs. Applied Physics Letters. 59(19). 2397–2399. 16 indexed citations
17.
Hashemi, M., J. Ramdani, B. T. McDermott, K. Reid, & S. M. Bedair. (1990). Atomic layer epitaxy of planar-doped structures for nonalloyed contacts and field-effect transistor. Applied Physics Letters. 56(10). 964–966. 15 indexed citations
18.
McDermott, B. T., K. Reid, N. A. El-Masry, et al.. (1990). Atomic layer epitaxy of GaInP ordered alloy. Applied Physics Letters. 56(12). 1172–1174. 58 indexed citations
19.
Bedair, S. M., B. T. McDermott, K. Reid, et al.. (1990). Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy. IEEE Electron Device Letters. 11(6). 261–263. 10 indexed citations
20.
Yin, Xin, Fred H. Pollak, B. T. McDermott, K. Reid, & S. M. Bedair. (1989). Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy. MRS Proceedings. 160. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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