M. Schmidt

715 total citations
41 papers, 566 citations indexed

About

M. Schmidt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Schmidt has authored 41 papers receiving a total of 566 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in M. Schmidt's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). M. Schmidt is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). M. Schmidt collaborates with scholars based in Germany, Ireland and Sweden. M. Schmidt's co-authors include Max C. Lemme, H.D.B. Gottlob, H. Kurz, T. Wahlbrink, Fred L. Terry, T. Mollenhauer, S.D. Senturia, T. J. Echtermeyer, J.K. Efavi and F. Driussi and has published in prestigious journals such as Journal of The Electrochemical Society, Carbohydrate Polymers and IEEE Transactions on Electron Devices.

In The Last Decade

M. Schmidt

40 papers receiving 530 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Schmidt Germany	13	485	227	104	70	61	41	566
Yanina Fedorenko Belgium	12	375 0.8×	228 1.0×	167 1.6×	44 0.6×	35 0.6×	33	454
Joël Cagnon United States	15	430 0.9×	317 1.4×	178 1.7×	74 1.1×	87 1.4×	26	563
Serap Yi̇ği̇t Gezgi̇n Türkiye	14	341 0.7×	326 1.4×	91 0.9×	82 1.2×	59 1.0×	47	452
G. Lian United States	10	334 0.7×	231 1.0×	98 0.9×	187 2.7×	93 1.5×	17	481
Xiaoguang Wu China	10	271 0.6×	420 1.9×	37 0.4×	66 0.9×	154 2.5×	19	500
Won-Jae Lee South Korea	12	303 0.6×	277 1.2×	38 0.4×	41 0.6×	89 1.5×	51	408
O. Salicio Italy	14	368 0.8×	314 1.4×	59 0.6×	33 0.5×	86 1.4×	28	444
J. Koprinarova Bulgaria	10	312 0.6×	202 0.9×	90 0.9×	40 0.6×	85 1.4×	24	427
M. Z. Tseng United States	9	266 0.5×	268 1.2×	32 0.3×	81 1.2×	67 1.1×	13	375
Tien Sheng Chao Taiwan	14	428 0.9×	170 0.7×	70 0.7×	74 1.1×	75 1.2×	57	496

Countries citing papers authored by M. Schmidt

Since Specialization

Citations

This map shows the geographic impact of M. Schmidt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Schmidt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Schmidt more than expected).

Fields of papers citing papers by M. Schmidt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Schmidt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Schmidt. The network helps show where M. Schmidt may publish in the future.

Co-authorship network of co-authors of M. Schmidt

This figure shows the co-authorship network connecting the top 25 collaborators of M. Schmidt. A scholar is included among the top collaborators of M. Schmidt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Schmidt. M. Schmidt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bonardd, Sebastián, M. Schmidt, Mario Saavedra‐Torres, et al.. (2016). Thermal and morphological behavior of chitosan/PEO blends containing gold nanoparticles. Experimental and theoretical studies. Carbohydrate Polymers. 144. 315–329. 34 indexed citations

Rao, Rosario, et al.. (2011). Trapping in GdSiO high-k films. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 7 indexed citations

Jasiński, J., et al.. (2011). Studies of the quality of GdSiO–Si interface. Microelectronics Reliability. 51(7). 1178–1182. 2 indexed citations

Engström, Olof, Bahman Raeissi, Ivona Z. Mitrović, et al.. (2010). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers (Invited). Journal of Telecommunications and Information Technology. 1. 10–19. 2 indexed citations

Engström, Olof, Bahman Raeissi, Ivona Z. Mitrović, et al.. (2010). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology. 10–19. 3 indexed citations

Bolten, Jens, T. Wahlbrink, M. Schmidt, H.D.B. Gottlob, & H. Kurz. (2010). Implementation of electron beam grey scale lithography and proximity effect correction for silicon nanowire device fabrication. Microelectronic Engineering. 88(8). 1910–1912. 15 indexed citations

Schmidt, M., et al.. (2010). Integration of ALD AlN work function tuning layers. 79. 92–93. 1 indexed citations

Gottlob, H.D.B., Andrea Stefani, M. Schmidt, et al.. (2009). Gd silicate: A high-k dielectric compatible with high temperature annealing. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 249–252. 20 indexed citations

Schmidt, M., Max C. Lemme, H.D.B. Gottlob, et al.. (2009). Mobility extraction in SOI MOSFETs with sub 1nm body thickness. Solid-State Electronics. 53(12). 1246–1251. 64 indexed citations

10.

Lemme, Max C., H.D.B. Gottlob, T. J. Echtermeyer, et al.. (2009). Complementary metal oxide semiconductor integration of epitaxial Gd2O3. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 27(1). 258–261. 12 indexed citations

11.

Schmidt, M., et al.. (2009). Metal gate electrodes for rare earth oxide high-k dielectrics. 88. 1–5. 1 indexed citations

12.

Hurley, Paul K., K. Cherkaoui, Eileen O’Connor, et al.. (2008). Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon. Chalmers Publication Library (Chalmers University of Technology). 3 indexed citations

13.

Gottlob, H.D.B., T. J. Echtermeyer, M. Schmidt, et al.. (2008). Leakage Current Mechanisms in Epitaxial Gd[sub 2]O[sub 3] High-k Gate Dielectrics. Electrochemical and Solid-State Letters. 11(3). G12–G12. 9 indexed citations

14.

Nazarov, A. N., Y. V. Gomeniuk, H.D.B. Gottlob, et al.. (2007). Charge trapping in ultrathin Gd2O3 high-k dielectric. Microelectronic Engineering. 84(9-10). 1968–1971. 12 indexed citations

15.

Lemme, Max C., T. J. Echtermeyer, M. Baus, et al.. (2007). Towards Graphene Field Effect Transistors. ECS Transactions. 11(6). 413–419. 11 indexed citations

16.

Gottlob, H.D.B., T. J. Echtermeyer, M. Schmidt, et al.. (2006). 0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes. IEEE Electron Device Letters. 27(10). 814–816. 36 indexed citations

17.

Gottlob, H.D.B., T. J. Echtermeyer, T. Mollenhauer, et al.. (2006). Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics. 150–153. 2 indexed citations

18.

Gottlob, H.D.B., T. Mollenhauer, T. Wahlbrink, et al.. (2006). Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(2). 710–714. 6 indexed citations

19.

Schmidt, M., Max C. Lemme, H. Kurz, et al.. (2005). Impact of H2/N2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks. Microelectronic Engineering. 80. 70–73. 43 indexed citations

20.

Mannaert, G., M. Schmidt, Michele Stucchi, et al.. (2003). Resist Strip and Cu Diffusion Barrier Etch in Cu BEOL Integration Schemes in a Mattson Highlands<sup>TM</sup> Chamber. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 92. 267–270. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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