J. Yum

948 total citations
42 papers, 787 citations indexed

About

J. Yum is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Yum has authored 42 papers receiving a total of 787 indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Yum's work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Ferroelectric and Negative Capacitance Devices (13 papers). J. Yum is often cited by papers focused on Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers) and Ferroelectric and Negative Capacitance Devices (13 papers). J. Yum collaborates with scholars based in United States, United Kingdom and South Korea. J. Yum's co-authors include G. Bersuker, P. D. Kirsch, Feng Zhu, Christopher W. Bielawski, Todd W. Hudnall, Jack C. Lee, R. Jammy, M. Nafrı́a, V. Iglesias and M. Porti and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

J. Yum

42 papers receiving 766 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Yum United States 17 723 287 181 60 55 42 787
S. Koveshnikov United States 16 916 1.3× 250 0.9× 365 2.0× 68 1.1× 42 0.8× 83 1.0k
Der‐Yuh Lin Taiwan 16 448 0.6× 394 1.4× 181 1.0× 95 1.6× 85 1.5× 83 643
K. A. Nasyrov Russia 15 602 0.8× 329 1.1× 80 0.4× 34 0.6× 54 1.0× 20 653
I. Dirnstorfer Germany 13 624 0.9× 454 1.6× 173 1.0× 60 1.0× 60 1.1× 39 705
S. Blonkowski France 18 707 1.0× 347 1.2× 105 0.6× 86 1.4× 145 2.6× 53 802
Yu. N. Novikov Russia 13 617 0.9× 393 1.4× 85 0.5× 50 0.8× 46 0.8× 54 667
Al-Moatasem El-Sayed Austria 17 870 1.2× 365 1.3× 112 0.6× 48 0.8× 50 0.9× 45 1.0k
Zuimin Jiang China 15 488 0.7× 238 0.8× 161 0.9× 115 1.9× 105 1.9× 45 592
Damir R. Islamov Russia 17 728 1.0× 504 1.8× 121 0.7× 23 0.4× 24 0.4× 54 867
A. Souifi France 13 470 0.7× 239 0.8× 290 1.6× 157 2.6× 27 0.5× 64 600

Countries citing papers authored by J. Yum

Since Specialization
Citations

This map shows the geographic impact of J. Yum's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yum with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yum more than expected).

Fields of papers citing papers by J. Yum

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yum. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yum. The network helps show where J. Yum may publish in the future.

Co-authorship network of co-authors of J. Yum

This figure shows the co-authorship network connecting the top 25 collaborators of J. Yum. A scholar is included among the top collaborators of J. Yum based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Yum. J. Yum is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yum, J., Derek W. Johnson, H. R. Harris, et al.. (2013). Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. Applied Physics Letters. 103(22). 10 indexed citations
2.
Yum, J., G. Bersuker, Jungwoo Oh, & Sarbajit Banerjee. (2012). Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability. Applied Physics Letters. 100(5). 8 indexed citations
3.
Yum, J., Jungwoo Oh, Todd W. Hudnall, et al.. (2012). Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices. Active and Passive Electronic Components. 2012. 1–7. 5 indexed citations
4.
Yum, J., G. Bersuker, Todd W. Hudnall, et al.. (2012). A study of novel ALD beryllium oxide as an interface passivation layer for Si MOS devices. 334. 1–2. 2 indexed citations
5.
Koh, Donghyi, J. Yum, D. Ferrer, et al.. (2012). Novel atomic layer deposited thin film beryllium oxide for InGaAs MOS Devices. 51. 163–166. 1 indexed citations
6.
Yum, J., et al.. (2012). Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission. physica status solidi (b). 249(6). 1160–1165. 12 indexed citations
7.
Yum, J., D. Ferrer, Todd W. Hudnall, et al.. (2011). A study of highly crystalline novel beryllium oxide film using atomic layer deposition. Journal of Crystal Growth. 334(1). 126–133. 31 indexed citations
8.
Yum, J., D. Ferrer, Sarbajit Banerjee, et al.. (2011). Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 29(6). 25 indexed citations
9.
Yum, J., Todd W. Hudnall, G. Bersuker, et al.. (2011). Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices. Journal of Applied Physics. 109(6). 41 indexed citations
10.
Yum, J., D. Ferrer, Todd W. Hudnall, et al.. (2011). Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric. Applied Physics Letters. 99(3). 13 indexed citations
11.
Yum, J., D. Ferrer, Todd W. Hudnall, et al.. (2011). Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates. Thin Solid Films. 520(7). 3091–3095. 18 indexed citations
12.
13.
Bersuker, G., D. C. Gilmer, Dekel Veksler, et al.. (2010). Metal oxide RRAM switching mechanism based on conductive filament microscopic properties. IRIS UNIMORE (University of Modena and Reggio Emilia). 19.6.1–19.6.4. 92 indexed citations
14.
Ok, Kang Min, Kerem Akarvardar, Chadwin D. Young, et al.. (2010). Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI. 34.2.1–34.2.4. 15 indexed citations
15.
16.
Ok, Injo, Feng Zhu, Soyeun Park, et al.. (2008). High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer. Applied Physics Letters. 93(13). 6 indexed citations
17.
18.
Ok, Injo, et al.. (2007). Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics. Applied Physics Letters. 91(13). 12 indexed citations
19.
Ok, Injo, Hyun Chan Kim, Feng Zhu, et al.. (2007). Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(4). 1491–1494. 12 indexed citations
20.
Kim, Hyoung-Sub, Injo Ok, Manhong Zhang, et al.. (2007). Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer. Applied Physics Letters. 91(4). 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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