J. Yum

948 citations

42 papers · 787 · h-index 17

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry
- Electronic and Structural Properties of Oxides

Papers in

Electrical and Electronic Engineering 42
- Semiconductor materials and devices 41
- Advancements in Semiconductor Devices and Circuit Design 34
- Ferroelectric and Negative Capacitance Devices 13
- Advanced Memory and Neural Computing 4
- Integrated Circuits and Semiconductor Failure Analysis 3
Materials Chemistry 12
- Electronic and Structural Properties of Oxides 12

Co-authors: G. Bersuker (18 shared papers)P. D. Kirsch (10 shared papers)Christopher W. Bielawski (15 shared papers)Todd W. Hudnall (15 shared papers)Feng Zhu (15 shared papers)Jack C. Lee (14 shared papers)R. Jammy (7 shared papers)M. Porti (3 shared papers)
Journals: Applied Physics Letters (17 papers)Microelectronic Engineering (2 papers)Journal of Crystal Growth (1 paper)Electrochemical and Solid-State Letters (1 paper)Solid-State Electronics (1 paper)
Partner nations: United States United Kingdom South Korea

In The Last Decade

J. Yum

42 papers receiving 766 citations

Peers

Countries citing papers authored by J. Yum

Since Specialization

Citations

This map shows the geographic impact of J. Yum's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yum with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yum more than expected).

Fields of papers citing papers by J. Yum

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yum. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yum. The network helps show where J. Yum may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Yum, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Yum Line = papers co-authored together J. Yum links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Grain boundary-driven leakage path formation in HfO2 dielectrics Solid-State Electronics ·G. Bersuker, J. Yum, Luca Vandelli, Andrea Padovani, Luca Larcher, V. Iglesias, M. Porti, M. Nafrı́a, Keith P. McKenna, Alexander L. Shluger, P. D. Kirsch, R. Jammy	2011	115
2	Metal oxide RRAM switching mechanism based on conductive filament microscopic properties IRIS UNIMORE (University of Modena and Reggio Emilia) ·G. Bersuker, D. C. Gilmer, Dekel Veksler, J. Yum, H. Park, Shichen Lian, Luca Vandelli, Andrea Padovani, Luca Larcher, Keith P. McKenna, Alexander L. Shluger, V. Iglesias, M. Porti, M. Nafrı́a, W. Taylor, P. D. Kirsch, R. Jammy	2010	92
3	Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer Applied Physics Letters ·Injo Ok, H. Kim, M. Zhang, Feng Zhu, S. Park, J. Yum, H. Zhao, Domingo Garcia, Prashant Majhi, N. Goel, Wilman Tsai, Chomani Gaspe, M. B. Santos, Jack C. Lee	2008	47
4	Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices Journal of Applied Physics ·J. Yum, T. Akyol, Ming Lei, Todd W. Hudnall, G. Bersuker, Michael Downer, Christopher W. Bielawski, J. C. Lee, Shayak Banerjee	2011	41
5	300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (X<inf>j</inf>∼5nm) formed with molecular monolayer doping technique K.-W. Ang, Joel Barnett, W.Y. Loh, Jing Huang, Byoung‐Gue Min, P. Y. Hung, Kang Min Ok, J. Yum, G. Bersuker, Martin Rodgers, V. Kaushik, S. C. Gausepohl, C. Hobbs, P. D. Kirsch, R. Jammy	2011	41
6	Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer Applied Physics Letters ·Hyoung-Sub Kim, Kang Min Ok, M. Zhang, Feng Zhu, Soyeun Park, J. Yum, H. Zhao, Jack C. Lee, Jungwoo Oh, Prashant Majhi	2008	32
7	A study of highly crystalline novel beryllium oxide film using atomic layer deposition Journal of Crystal Growth ·J. Yum, T. Akyol, Ming Lei, D. Ferrer, Todd W. Hudnall, M. C. Downer, Christopher W. Bielawski, G. Bersuker, J.C. Lee, Sreeparna Banerjee	2011	31
8	Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer Applied Physics Letters ·Hyoung-Sub Kim, Injo Ok, Manhong Zhang, Feng Zhu, S. Park, J. Yum, Han Zhao, Jack C. Lee	2007	31
9	A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer Applied Physics Letters ·Hyoung-Sub Kim, Kang Min Ok, M. Zhang, Feng Zhu, Soyeun Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi, N. Goel, Wilman Tsai, Chomani Gaspe, M. B. Santos	2008	27
10	Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·J. Yum, T. Akyol, D. Ferrer, J. C. Lee, Sarbajit Banerjee, Ming Lei, M. C. Downer, Todd W. Hudnall, Christopher W. Bielawski, G. Bersuker	2011	25
11	Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Donghyi Koh, J. Yum, Sanjay K. Banerjee, Todd W. Hudnall, Christopher W. Bielawski, W. A. Lanford, Benjamin French, Marc French, Patrick Henry, Han Li, Markus Kühn, Sean W. King	2014	23
12	Evidence for hydrogen two-level systems in atomic layer deposition oxides Applied Physics Letters ·Moe Khalil, M. J. A. Stoutimore, S. P. Gladchenko, Aaron M. Holder, Charles B. Musgrave, Alexander C. Kozen, Gary W. Rubloff, Y. Q. Liu, Roy G. Gordon, J. Yum, S. Banerjee, C. J. Lobb, Kevin Osborn	2013	19
13	Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates Thin Solid Films ·J. Yum, T. Akyol, Ming Lei, D. Ferrer, Todd W. Hudnall, Michael Downer, Christopher W. Bielawski, G. Bersuker, J.C. Lee, Sanjay K. Banerjee	2011	18
14	A study of capping layers for sulfur monolayer doping on III-V junctions Applied Physics Letters ·J. Yum, Hyo-Seob Shin, Richard J. Hill, Jungwoo Oh, H. D. Lee, Ryan M. Mushinski, Todd W. Hudnall, Christopher W. Bielawski, Sarbajit Banerjee, W.Y. Loh, Wei-E Wang, Paul Kirsch	2012	18
15	Hf O 2 -based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer Applied Physics Letters ·Hyoung-Sub Kim, Kang Min Ok, M. Zhang, Feng Zhu, Sejun Park, J. Yum, H. Zhao, Jack C. Lee, Prashant Majhi	2008	17
16	Grain boundary-driven leakage path formation in HfO<inf>2</inf> dielectrics G. Bersuker, J. Yum, V. Iglesias, M. Porti, M. Nafrı́a, Keith P. McKenna, Alexander L. Shluger, P. D. Kirsch, R. Jammy	2010	17
17	Spectroscopic evaluation of band alignment of atomic layer deposited BeO on Si(100) Applied Physics Letters ·Lei Ming, J. Yum, J. Price, Todd W. Hudnall, Christopher W. Bielawski, Sanjay K. Banerjee, Patrick Lysaght, G. Bersuker, M. C. Downer	2012	16
18	Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI Kang Min Ok, Kerem Akarvardar, S. Lin, Mehmet O. Baykan, Chadwin D. Young, Pui Yee Hung, Martin Rodgers, Stephen Earl Bennett, Harlan Stamper, Daniel Franca, J. Yum, Jim Nadeau, C. Hobbs, P. D. Kirsch, P. Majhi, R. Jammy	2010	15
19	Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III–V MOS devices Microelectronic Engineering ·K.S. Min, Sean Kang, J.K. Kim, J. Yum, Young In Jhon, Todd W. Hudnall, Christopher W. Bielawski, Sanjay K. Banerjee, G. Bersuker, Myung S. Jhon, Geun Young Yeom	2013	15
20	Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric Applied Physics Letters ·J. Yum, T. Akyol, Ming Lei, D. Ferrer, Todd W. Hudnall, M. C. Downer, Christopher W. Bielawski, G. Bersuker, J. C. Lee, Sarbajit Banerjee	2011	13

About J. Yum

J. Yum is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 42 papers that have together received 787 indexed citations. Recurring topics across this work include Semiconductor materials and devices (41 papers), Advancements in Semiconductor Devices and Circuit Design (34 papers), Ferroelectric and Negative Capacitance Devices (13 papers), Electronic and Structural Properties of Oxides (12 papers), Semiconductor materials and interfaces (9 papers), Nanowire Synthesis and Applications (4 papers), Advanced Memory and Neural Computing (4 papers) and Integrated Circuits and Semiconductor Failure Analysis (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (723 citations), Materials Chemistry (287 citations), Atomic and Molecular Physics, and Optics (181 citations), Electronic, Optical and Magnetic Materials (55 citations) and Condensed Matter Physics (32 citations). J. Yum has collaborated with scholars based in United States, United Kingdom and South Korea. Frequent co-authors include G. Bersuker, P. D. Kirsch, Christopher W. Bielawski, Todd W. Hudnall, Feng Zhu, Jack C. Lee, R. Jammy, M. Porti, Keith P. McKenna and M. Nafrı́a. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, Journal of Crystal Growth, Electrochemical and Solid-State Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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