B. Maiti

733 citations

27 papers · 551 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
Electronic, Optical and Magnetic Materials

Papers in

Condensed Matter Physics 5
- GaN-based semiconductor devices and materials 5
Electrical and Electronic Engineering 24
- Semiconductor materials and devices 24
- Advancements in Semiconductor Devices and Circuit Design 13
- Integrated Circuits and Semiconductor Failure Analysis 6
- Advanced Memory and Neural Computing 5
- Ferroelectric and Negative Capacitance Devices 4

Co-authors: Philip J. Tobin Jack C. Lee K. Reid Sergio A. Ajuria Rama I. Hegde Hyunsang Hwang Dim-Lee Kwong R. I. Hegde
Journals: Applied Physics Letters (4 papers)IEEE Electron Device Letters (3 papers)Journal of The Electrochemical Society (2 papers)Electrochemical and Solid-State Letters (1 paper)New Journal of Chemistry (1 paper)
Partner nations: United States Taiwan India

In The Last Decade

B. Maiti

25 papers receiving 520 citations

Peers

Countries citing papers authored by B. Maiti

Since Specialization

Citations

This map shows the geographic impact of B. Maiti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Maiti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Maiti more than expected).

Fields of papers citing papers by B. Maiti

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Maiti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Maiti. The network helps show where B. Maiti may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Maiti, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Maiti Line = papers co-authored together B. Maiti links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Self-Timed Write Aid Circuit for Tall Memories in Advanced CMOS Technologies Diana M. Monsalve, Hongchi Wang, B. Maiti, Oleas Vega	2021	1
2	Low V<inf>MIN</inf> 20nm embedded SRAM with multi-voltage wordline control based read and write assist techniques Mudit Bhargava, Olivia Rovince Purba, Jung Jihn, B. Maiti, Oleas Vega, Hamid Kurdy Abd El-Aziz, Xinri Wang, Christian Pennotti, Jessica Kretschmann, Shane F. Collins, Jiaying Xiong, A. Calcagno, Raymond H. Osterholtz	2014	11
3	Circadian Rhythms in Adrenal Adrenaline and Noradrenaline and in Blood Glucose Levels in the Bandicoot Rat (Bandicota bengalensis) Experimental and Clinical Endocrinology & Diabetes ·Prahlad C. Ghosh, Subrata Chowdhury, B. Maiti	2009	0
4	Separation of light hydrocarbons by gas chromatography using serpentine as stationary phase Indian Journal of Chemical Technology ·B.N. Singh, B. Maiti	2004	2
5	PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology B. Maiti, Philip J. Tobin, Chris Hobbs, R. I. Hegde, Fanghao Huang, Sidra Haye, D. Jovanovic, Chongliang Zheng, Religija Ir Kultūra, Daniel Connelly, Érick Soares dos Reis, J. Mogab, C Scuderi, L.B. La	2002	13
6	Metal gates for advanced sub-80-nm SOI CMOS technology Baolei Cheng, B. Maiti, S. Samavedam, Jennifer E. Grant, B. Taylor, Philip J. Tobin, J. Mogab	2002	22
7	High performance 20 Å NO oxynitride for gate dielectric in deep subquarter micron CMOS technology B. Maiti, P.J. Tobin, Veena Misra, R. I. Hegde, K. Reid, Jiangang Zheng	2002	7
8	A new photoluminescent CuI2N6 chromophore New Journal of Chemistry ·Goutam Kumar Patra, Israel Goldberg, Sanjoy K. Chowdhury, B. Maiti, Amitabha Sarkar, Prakriti Ranjan Bangal, Sankar Chakravorti, Nitin Chattopadhyay, Derek A. Tocher, Michael G. B. Drew, Golam Mostafa, Shubhamoy Chowdhury, Dipankar Datta	2001	18
9	0.18 /spl mu/m metal gate fully-depleted SOI MOSFETs for advanced CMOS applications Berrío López, B. Maiti, Daniel Connelly, Chongliang Zheng, Fanghao Huang, Érick Soares dos Reis, 人事労務, Kueh Hwa Ik, Wen-Fa Wu, C Scuderi, D.G. Dow, P.J. Tobin, J. Mogab	1999	11
10	Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation Chris Hobbs, R. I. Hegde, B. Maiti, Hsin Tseng, D. C. Gilmer, P.J. Tobin, Érick Soares dos Reis, عامر عبداللطيف حسين, Kueh Hwa Ik, Arik Messermann, Daniel Jesper, K. Reid, L.B. La, Sumiyo Tanigawa, D. Kim	1999	2
11	Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation MRS Proceedings ·C. Hobbs, R. I. Hegde, B. Maiti, Arik Messermann, L.B. La, K. Reid, Wang Zuo-h, Sumiyo Tanigawa, J. Conner, V. Kaushik, L. Prabhu, Assaf Y. Anderson, S. Bagchi, Kimberley Collette, Philip J. Tobin	1999	1
12	Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric Journal of The Electrochemical Society ·Rama I. Hegde, B. Maiti, S. Raghaw, K. Reid, Philip J. Tobin	1998	6
13	Growth and Film Characteristics of N 2 O and NO Oxynitride Gate and Tunnel Dielectrics Journal of The Electrochemical Society ·Rama I. Hegde, B. Maiti, Philip J. Tobin	1997	34
14	Re-evaluation of the benefits of postoxidation annealing on sub-100 /spl Aring/ gate oxide quality IEEE Electron Device Letters ·Sergio A. Ajuria, B. Maiti, Philip J. Tobin, T.C. Mele	1996	3
15	Oxynitride gate dielectric grown in nitric oxide (NO): the effect of reoxidation on dielectric reliability of the active edge IEEE Electron Device Letters ·B. Maiti, Philip J. Tobin, 直子伊豫本, K. Reid, Sergio A. Ajuria, R. I. Hegde, V. Kaushik	1996	10
16	Growth and surface chemistry of oxynitride gate dielectric using nitric oxide Applied Physics Letters ·Rama I. Hegde, Philip J. Tobin, K. Reid, B. Maiti, Sergio A. Ajuria	1995	117
17	Novel process for reliable ultrathin tunnel dielectrics Applied Physics Letters ·Dipali Kosey, B. Maiti, Jack C. Lee	1994	12
18	Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process Applied Physics Letters ·B. Maiti, Григорцевич Богдан Викторович, Insup Lee, Jack C. Lee	1992	13
19	Low-pressure chemical-vapor-deposited silicon-rich oxides for nonvolatile memory applications IEEE Electron Device Letters ·B. Maiti, Natalia Prieto	1992	17
20	Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O Applied Physics Letters ·Hyunsang Hwang, Strothmann K-H, B. Maiti, Dim-Lee Kwong, Jack C. Lee	1990	169

About B. Maiti

B. Maiti is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Analytical Chemistry, having authored 27 papers that have together received 551 indexed citations. Recurring topics across this work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Advanced Memory and Neural Computing (5 papers), GaN-based semiconductor devices and materials (5 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Copper Interconnects and Reliability (2 papers) and Ga2O3 and related materials (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (521 citations), Electronic, Optical and Magnetic Materials (79 citations), Surfaces, Coatings and Films (29 citations), Materials Chemistry (179 citations) and Condensed Matter Physics (35 citations). B. Maiti has collaborated with scholars based in United States, Taiwan and India. Frequent co-authors include Philip J. Tobin, Jack C. Lee, K. Reid, Sergio A. Ajuria, Rama I. Hegde, Hyunsang Hwang, Dim-Lee Kwong, R. I. Hegde, P.J. Tobin and J. Mogab. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of The Electrochemical Society, Electrochemical and Solid-State Letters and New Journal of Chemistry.

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