C. Leroux

1.0k citations

56 papers · 715 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials

Papers in ⓘ

Electrical and Electronic Engineering 54
- Semiconductor materials and devices 46
- Advancements in Semiconductor Devices and Circuit Design 37
- Integrated Circuits and Semiconductor Failure Analysis 24
- Ferroelectric and Negative Capacitance Devices 8
Condensed Matter Physics 8
- GaN-based semiconductor devices and materials 8

Co-authors: X. Garros (15 shared papers)G. Reimbold (19 shared papers)G. Ghibaudo (26 shared papers)F. Martín (13 shared papers)B. Guillaumot (7 shared papers)Jean‐Luc Autran (2 shared papers)Jérôme Mitard (6 shared papers)Pascal Le Masson (3 shared papers)
Journals: Microelectronic Engineering (10 papers)Solid-State Electronics (6 papers)Applied Physics Letters (3 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: France United States Switzerland

In The Last Decade

C. Leroux

55 papers receiving 687 citations

Peers

Countries citing papers authored by C. Leroux

Since Specialization

Citations

This map shows the geographic impact of C. Leroux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Leroux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Leroux more than expected).

Fields of papers citing papers by C. Leroux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Leroux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Leroux. The network helps show where C. Leroux may publish in the future.

Co-authors

The 25 scholars most cited alongside C. Leroux, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Leroux Line = papers co-authored together C. Leroux links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 56 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization and modeling of hysteresis phenomena in high K dielectrics C. Leroux, Jérôme Mitard, G. Ghibaud, X. Garros, G. Reimbold, B. Guillaumot, F. Martín	2005	86
2	Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view Applied Physics Letters ·Pascal Le Masson, Jean‐Luc Autran, Michel Houssa, X. Garros, C. Leroux	2002	53
3	75 nm damascene metal gate and high-k integration for advanced CMOS devices B. Guillaumot, X. Garros, F. Lime, K. Oshima, B. Tavel, J. A. Chroboczek, Pascal Le Masson, R. Truche, A.-M. Papon, F. Martín, J.F. Damlencourt, S. Maı̂trejean, M. Rivoire, C. Leroux, S. Cristoloveanu, G. Ghibaudo, J.L. Autran, T. Skotnicki, S. Deleonibus	2003	51
4	Metal/Acid Bifunctional Catalysis and Intimacy Criterion for Ethylcyclohexane Hydroconversion: When Proximity Does Not Matter ACS Catalysis ·Esther Gutiérrez-Acebo, C. Leroux, Céline Chizallet, Yves Schuurman, Christophe Bouchy	2018	50
5	Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition Solid-State Electronics ·J.-F. Damlencourt, O. Renault, D. Samour, Anne‐Marie Papon, C. Leroux, F. Martín, S. Marthon, M.N. Séméria, X. Garros	2003	44
6	Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V Applied Surface Science ·Fabien Piallat, V. Beugin, R. Gassilloud, L. Dussault, Bernard Pélissier, C. Leroux, P. Caubet, C. Vallée	2014	32
7	Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides Solid-State Electronics ·F. Lime, C. Guiducci, R. Clerc, G. Ghibaudo, C. Leroux, T. Ernst	2003	32
8	Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT Microelectronic Engineering ·Iliass Nifa, C. Leroux, A. Torres, Matthew Charles, G. Reimbold, G. Ghibaudo, Edwige Bano	2019	29
9	Ultra high density three dimensional capacitors based on Si nanowires array grown on a metal layer Applied Physics Letters ·Paul-Henry Morel, Georg Haberfehlner, D. Lafond, G. Audoit, V. Jousseaume, C. Leroux, M. Fayolle-Lecocq, T. Baron, T. Ernst	2012	27
10	X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface Journal of Applied Physics ·Li Zhu, N. Barrett, Pascale Jégou, F. Martín, C. Leroux, E. Martínez, H. Grampeix, O. Renault, Amal Chabli	2009	27
11	Light emission microscopy for thin oxide reliability analysis Microelectronic Engineering ·C. Leroux, D. Blachier, O. Brière, G. Reimbold	1997	24
12	An Efficient Model for Accurate Capacitance-Voltage Characterization of High-k Gate Dielectrics Using a Mercury Probe Electrochemical and Solid-State Letters ·X. Garros, C. Leroux, Jean‐Luc Autran	2002	22
13	MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices Optics Express ·Alexandros Emboras, Adel Najar, Siddharth Nambiar, Philippe Grosse, E. Augendre, C. Leroux, B. De Salvo, Roch Espiau de Lamaëstre	2012	19
14	Measurement of Dipoles/Roll-Off /Work Functions by Coupling CV and IPE and Study of Their Dependence on Fabrication Process IEEE Transactions on Electron Devices ·M. Charbonnier, C. Leroux, V. Cosnier, P. Besson, E. Martínez, Nicolas Benedetto, Christophe Licitra, N. Rochat, C. Gaumer, Khaled Kaja, G. Ghibaudo, F. Martín, G. Reimbold	2010	18
15	Investigation on trapping and detrapping mechanisms in HfO2 films Microelectronic Engineering ·Jérôme Mitard, C. Leroux, G. Ghibaudo, G. Reimbold, X. Garros, B. Guillaumot, F. Boulanger	2005	14
16	Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect Microelectronic Engineering ·Iliass Nifa, C. Leroux, Alphonse Torres, Matthew Charles, D. Blachier, G. Reimbold, Gérard Ghibaudo, Edwige Bano	2017	12
17	Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs O. Weber, F. Andricu, M. Cassé, T. Ernst, Jérôme Mitard, F. Ducroquet, J.-F. Damlencourt, Jean‐Michel Hartmann, D. Lafond, A.-M. Papon, L. Militaru, L. Thévenod, K. Romanjek, C. Leroux, F. Martín, B. Guillaumot, G. Ghibaudo, S. Delconibus	2005	12
18	Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget Journal of The Electrochemical Society ·E. Martínez, C. Leroux, Nicolas Benedetto, C. Gaumer, M. Charbonnier, Christophe Licitra, C. Guedj, F. Fillot, S. Lhostis	2009	11
19	InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodetector Fabricated on a Nominal Si(001) Substrate for Near- and Short-Wavelength Infrared Applications ACS Photonics ·Veronica Letka, M. Martin, Natalia Massara, C. Leroux, Roselyne Templier, Christophe Licitra, Jérôme Richy, T. Baron	2023	9
20	Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers AIP Advances ·H. Mehdi, M. Martin, Christophe Jany, Léopold Virot, Jean-Michel Hartmann, Jérémy Da Fonseca, J. Moeyaert, P. Gaillard, J. Coignus, C. Leroux, Christophe Licitra, B. Salem, T. Baron	2021	8

About C. Leroux

C. Leroux is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Biomedical Engineering and Atomic and Molecular Physics, and Optics, having authored 56 papers that have together received 715 indexed citations. Recurring topics across this work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers), Integrated Circuits and Semiconductor Failure Analysis (24 papers), GaN-based semiconductor devices and materials (8 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor Quantum Structures and Devices (4 papers), Ga2O3 and related materials (3 papers) and Nanowire Synthesis and Applications (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (613 citations), Condensed Matter Physics (71 citations), Materials Chemistry (179 citations), Electronic, Optical and Magnetic Materials (62 citations) and Atomic and Molecular Physics, and Optics (96 citations). C. Leroux has collaborated with scholars based in France, United States and Switzerland. Frequent co-authors include X. Garros, G. Reimbold, G. Ghibaudo, F. Martín, B. Guillaumot, Jean‐Luc Autran, Jérôme Mitard, Pascal Le Masson, D. Blachier and Michel Houssa. Their work appears in journals such as Microelectronic Engineering, Solid-State Electronics, Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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