A. Zauner

593 total citations
23 papers, 438 citations indexed

About

A. Zauner is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, A. Zauner has authored 23 papers receiving a total of 438 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 11 papers in Materials Chemistry. Recurrent topics in A. Zauner's work include GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (10 papers) and ZnO doping and properties (9 papers). A. Zauner is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (10 papers) and ZnO doping and properties (9 papers). A. Zauner collaborates with scholars based in Netherlands, Poland and France. A. Zauner's co-authors include J.L. Weyher, I. Grzegory, P.K. Larsen, Paul D. Brown, P.R. Hageman, S. Porowski, W.J.P. van Enckevort, T. Wosiński, Jean‐Luc Rouvière and J.J. Schermer and has published in prestigious journals such as Applied Physics Letters, The Journal of Physical Chemistry B and Thin Solid Films.

In The Last Decade

A. Zauner

23 papers receiving 429 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Zauner Netherlands 9 355 228 185 162 114 23 438
M. Barchuk Germany 12 210 0.6× 238 1.0× 195 1.1× 112 0.7× 92 0.8× 30 400
Li Chang Taiwan 12 349 1.0× 208 0.9× 180 1.0× 256 1.6× 88 0.8× 33 502
C. Roder Germany 11 472 1.3× 344 1.5× 264 1.4× 145 0.9× 117 1.0× 25 580
Chinkyo Kim South Korea 10 271 0.8× 255 1.1× 152 0.8× 120 0.7× 63 0.6× 49 408
Mitsuhisa Narukawa Japan 8 429 1.2× 279 1.2× 210 1.1× 105 0.6× 125 1.1× 9 450
Masahiro Nagao Japan 13 239 0.7× 118 0.5× 185 1.0× 125 0.8× 41 0.4× 31 422
A. Chandolu United States 13 276 0.8× 219 1.0× 172 0.9× 184 1.1× 61 0.5× 21 427
C. J. Pan Taiwan 13 293 0.8× 255 1.1× 220 1.2× 196 1.2× 65 0.6× 26 428
H. Behmenburg Germany 13 398 1.1× 145 0.6× 219 1.2× 207 1.3× 93 0.8× 37 443
Naoyuki Nakada Japan 10 443 1.2× 160 0.7× 210 1.1× 176 1.1× 113 1.0× 11 470

Countries citing papers authored by A. Zauner

Since Specialization
Citations

This map shows the geographic impact of A. Zauner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Zauner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Zauner more than expected).

Fields of papers citing papers by A. Zauner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Zauner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Zauner. The network helps show where A. Zauner may publish in the future.

Co-authorship network of co-authors of A. Zauner

This figure shows the co-authorship network connecting the top 25 collaborators of A. Zauner. A scholar is included among the top collaborators of A. Zauner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Zauner. A. Zauner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Zauner, A., et al.. (2017). Benefits of a thermal drift during atomic layer deposition of Al2O3 for C-Si passivation. 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC). 1237–1240. 3 indexed citations
2.
Zauner, A., et al.. (2014). PERC Solar Cells: Comparison of Al Precursors for Rear-Side Surface Passivation. EU PVSEC. 1413–1416. 1 indexed citations
3.
Ruhl, G., Mindaugas Lukosius, Christian Wenger, et al.. (2014). Dielectric Material Options for Integrated Capacitors. ECS Journal of Solid State Science and Technology. 3(8). N120–N125. 8 indexed citations
4.
Urrejola, Elías, et al.. (2014). Dielectric Capping Layers for High Efficiency Rear Passivated Silicon Solar Cells. EU PVSEC. 1337–1341. 2 indexed citations
5.
Abrutis, A., Mindaugas Lukosius, Martynas Skapas, et al.. (2013). Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications. Thin Solid Films. 536. 68–73. 5 indexed citations
6.
Lukosius, Mindaugas, A. Abrutis, Martynas Skapas, et al.. (2011). Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric. Microelectronic Engineering. 88(7). 1529–1532. 2 indexed citations
7.
Zauner, A., et al.. (2010). Atomic layer deposition of tantalum nitride based thin films from cyclopentadienyl type precursor. Thin Solid Films. 519(1). 367–372. 5 indexed citations
8.
Rafik, M., X. Garros, G. Ribes, et al.. (2007). Impact of TiN Metal gate on NBTI assessed by interface states and fast transient effect characterization. 825–828. 15 indexed citations
9.
Zauner, A., et al.. (2002). Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology. Journal of Crystal Growth. 240(1-2). 14–21. 47 indexed citations
10.
Devillers, M.A.C., et al.. (2001). MOCVD PBZRxti1−xo3 thin films on platinized silicon wafers and srtio3 crystals. Integrated ferroelectrics. 36(1-4). 265–274. 1 indexed citations
11.
Zauner, A., et al.. (2001). Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates. Journal of Crystal Growth. 230(3-4). 477–480. 4 indexed citations
12.
Zauner, A., et al.. (2000). Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities. Applied Physics Letters. 76(17). 2355–2357. 40 indexed citations
13.
Zandbergen, H.W., J. Jansen, A. Zauner, & J.L. Weyher. (2000). Determination of polarity of GaN cross-section TEM specimens using quantitative electron diffraction. Journal of Crystal Growth. 210(1-3). 167–171. 5 indexed citations
14.
Zauner, A., J.J. Schermer, W.J.P. van Enckevort, et al.. (2000). Homo-epitaxial growth on misoriented GaN substrates by MOCVD. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 425–431. 2 indexed citations
15.
Zauner, A., J.L. Weyher, Marco Plomp, et al.. (2000). Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation. Journal of Crystal Growth. 210(4). 435–443. 61 indexed citations
16.
Zieliński, Marcin, Peter C. M. Christianen, A. Zauner, et al.. (2000). Shallow-impurity-related photoluminescence in homoepitaxial GaN. MRS Proceedings. 639. 3 indexed citations
17.
Liu, Xiangyang, et al.. (2000). Can A Foreign Particle Cause Surface Instability?. The Journal of Physical Chemistry B. 104(50). 11942–11949. 10 indexed citations
18.
Weyher, J.L., Paul D. Brown, A. Zauner, et al.. (1999). Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD). Journal of Crystal Growth. 204(4). 419–428. 77 indexed citations
19.
Theije, F.K. de, A. Zauner, P.R. Hageman, W.J.P. van Enckevort, & P.K. Larsen. (1999). An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD. Journal of Crystal Growth. 197(1-2). 37–47. 17 indexed citations
20.
Zauner, A., M.A.C. Devillers, P.R. Hageman, P.K. Larsen, & S. Porowski. (1998). Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals. MRS Internet Journal of Nitride Semiconductor Research. 3. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by M. Barchuk Breakdown of academic impact, for papers by Li Chang Breakdown of academic impact, for papers by C. Roder Breakdown of academic impact, for papers by Chinkyo Kim Breakdown of academic impact, for papers by Mitsuhisa Narukawa Breakdown of academic impact, for papers by Masahiro Nagao Breakdown of academic impact, for papers by A. Chandolu Breakdown of academic impact, for papers by C. J. Pan Breakdown of academic impact, for papers by H. Behmenburg Breakdown of academic impact, for papers by Naoyuki Nakada
Rankless by CCL
2026