D. Jalabert

1.9k total citations
73 papers, 1.5k citations indexed

About

D. Jalabert is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, D. Jalabert has authored 73 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Condensed Matter Physics, 34 papers in Atomic and Molecular Physics, and Optics and 30 papers in Electrical and Electronic Engineering. Recurrent topics in D. Jalabert's work include GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (23 papers) and Semiconductor Quantum Structures and Devices (21 papers). D. Jalabert is often cited by papers focused on GaN-based semiconductor devices and materials (34 papers), Semiconductor materials and devices (23 papers) and Semiconductor Quantum Structures and Devices (21 papers). D. Jalabert collaborates with scholars based in France, Japan and Greece. D. Jalabert's co-authors include B. Daudin, E. Monroy, E. Bellet‐Amalric, N. Gogneau, J. Brault, Mitsuhiro Tanaka, Le Si Dang, Christoph Adelmann, T. Shibata and H. Mariette and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. Jalabert

73 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Jalabert France 22 854 689 626 492 489 73 1.5k
R. Vianden Germany 20 781 0.9× 620 0.9× 670 1.1× 326 0.7× 421 0.9× 160 1.7k
P. Norris United States 24 811 0.9× 583 0.8× 646 1.0× 386 0.8× 600 1.2× 84 1.5k
M. Städele Germany 20 396 0.5× 831 1.2× 675 1.1× 239 0.5× 896 1.8× 60 1.9k
S. Gonda Japan 21 1.0k 1.2× 884 1.3× 690 1.1× 515 1.0× 1.1k 2.2× 102 2.0k
Markus Pristovsek Germany 26 1.4k 1.6× 1.1k 1.6× 927 1.5× 668 1.4× 920 1.9× 153 2.3k
S. Askénazy France 22 718 0.8× 858 1.2× 657 1.0× 786 1.6× 482 1.0× 138 2.1k
T. Koide Japan 24 688 0.8× 953 1.4× 728 1.2× 918 1.9× 361 0.7× 106 2.0k
J. M. Vandenberg United States 32 929 1.1× 1.6k 2.3× 679 1.1× 761 1.5× 1.4k 2.8× 95 2.9k
W. E. Hoke United States 24 792 0.9× 1.2k 1.7× 495 0.8× 274 0.6× 1.7k 3.6× 130 2.3k
H. Kojima Japan 26 2.0k 2.3× 568 0.8× 423 0.7× 1.1k 2.3× 206 0.4× 77 2.5k

Countries citing papers authored by D. Jalabert

Since Specialization
Citations

This map shows the geographic impact of D. Jalabert's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Jalabert with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Jalabert more than expected).

Fields of papers citing papers by D. Jalabert

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Jalabert. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Jalabert. The network helps show where D. Jalabert may publish in the future.

Co-authorship network of co-authors of D. Jalabert

This figure shows the co-authorship network connecting the top 25 collaborators of D. Jalabert. A scholar is included among the top collaborators of D. Jalabert based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Jalabert. D. Jalabert is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ibrahim, Fatima, H. Boukari, Jing Li, et al.. (2023). Epitaxial van der Waals heterostructures of Cr2Te3 on two-dimensional materials. Physical Review Materials. 7(5). 4 indexed citations
2.
Berger, Marie‐Hélène, D. Jalabert, Michael Walls, et al.. (2016). Atomic-resolved depth profile of strain and cation intermixing around LaAlO3/SrTiO3 interfaces. Scientific Reports. 6(1). 28118–28118. 25 indexed citations
3.
Jalabert, D., et al.. (2013). Quantitative damage depth profiles in arsenic implanted HgCdTe. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 313. 76–80. 17 indexed citations
4.
Jalabert, D., et al.. (2012). Strain state of GaN nanodisks in AlN nanowires studied by medium energy ion spectroscopy. Nanotechnology. 23(42). 425703–425703. 5 indexed citations
5.
Kandaswamy, P., Catherine Bougerol, D. Jalabert, P. Rutérana, & E. Monroy. (2009). Strain relaxation in short-period polar GaN/AlN superlattices. Journal of Applied Physics. 106(1). 50 indexed citations
6.
Kandaswamy, P., D. Jalabert, Catherine Bougerol, et al.. (2009). Strain effects in GaN/AlN short‐period superlattices for intersubband optoelectronics. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 6(S2). 5 indexed citations
7.
Martínez, E., D. Lafond, F. Pierre, et al.. (2007). Chemical interface analysis of as grown HfO[sub 2] ultrathin films on SiO[sub 2]. University of Huddersfield Repository (University of Huddersfield). 3 indexed citations
8.
Noé, Pierre, B. Salem, D. Jalabert, et al.. (2007). Effect of the Er-Si interatomic distance on the Er3+ luminescence in silicon-rich silicon oxide thin films. Journal of Applied Physics. 102(10). 5 indexed citations
9.
Hori, Yuichi, D. Jalabert, Thomas Andreev, et al.. (2004). Morphological properties of GaN quantum dots doped with Eu. Applied Physics Letters. 84(13). 2247–2249. 16 indexed citations
10.
Dimakis, Emmanouil, A. Georgakilas, M. Androulidaki, et al.. (2004). High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy. 80. 60–63. 2 indexed citations
11.
Gogneau, N., D. Jalabert, E. Monroy, et al.. (2004). Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 96(2). 1104–1110. 47 indexed citations
12.
Androulidaki, M., N. T. Pelekanos, Emmanouil Dimakis, et al.. (2003). Field‐compensated quaternary InAlGaN/GaN quantum wells. physica status solidi (b). 240(2). 301–304. 4 indexed citations
13.
Roy, W. Van, M. Wójcik, E. Jędryka, et al.. (2003). Very low chemical disorder in epitaxial NiMnSb films on GaAs(111)B. Applied Physics Letters. 83(20). 4214–4216. 32 indexed citations
14.
Monroy, E., N. Gogneau, D. Jalabert, et al.. (2003). In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy. Applied Physics Letters. 82(14). 2242–2244. 26 indexed citations
15.
Barjon, Julien, J. Brault, B. Daudin, D. Jalabert, & Brigitte Sieber. (2003). Cathodoluminescence study of carrier diffusion in AlGaN. Journal of Applied Physics. 94(4). 2755–2757. 18 indexed citations
16.
Halley, D., P. Auric, P. Bayle‐Guillemaud, et al.. (2002). L1 ordering at different stages of Fe0.5Pd0.5 epitaxial growth. Journal of Applied Physics. 91(12). 9757–9763. 11 indexed citations
17.
Noé, Pierre, D. Jalabert, Jean‐Luc Rouvière, et al.. (2002). Epitaxial growth of germanium dots on Si (001) surface covered by a very thin silicon nitride layer. Microelectronic Engineering. 61-62. 643–649. 7 indexed citations
18.
Biquard, X., A. Brénac, F. Chandezon, et al.. (1999). Multiply charged cluster ion crossed-beam apparatus: Multi-ionization of clusters by ion impact. Review of Scientific Instruments. 70(8). 3244–3253. 60 indexed citations
19.
Defrance, P, R. Friedlein, C. Guet, et al.. (1996). Elastic large-angle scattering of electrons by multiply charged ions. Journal of Physics B Atomic Molecular and Optical Physics. 29(19). 4443–4456. 19 indexed citations
20.
Chandezon, F., C. Guet, B. A. Huber, et al.. (1995). Ionization and fragmentation of metallic clusters (Na ) induced by ion impact. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 98(1-4). 482–487. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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