H.‐H. Tseng

2.6k total citations
58 papers, 1.7k citations indexed

About

H.‐H. Tseng is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, H.‐H. Tseng has authored 58 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 58 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 7 papers in Biomedical Engineering. Recurrent topics in H.‐H. Tseng's work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers) and Integrated Circuits and Semiconductor Failure Analysis (23 papers). H.‐H. Tseng is often cited by papers focused on Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers) and Integrated Circuits and Semiconductor Failure Analysis (23 papers). H.‐H. Tseng collaborates with scholars based in United States, Taiwan and South Korea. H.‐H. Tseng's co-authors include P.J. Tobin, R. I. Hegde, Philip J. Tobin, D. C. Gilmer, Greg Sun, Richard Soref, V. I. Mashanov, Dina H. Triyoso, R. Jammy and S. Samavedam and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

H.‐H. Tseng

55 papers receiving 1.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H.‐H. Tseng United States 22 1.6k 442 431 195 113 58 1.7k
T. Billon France 21 1.5k 0.9× 356 0.8× 568 1.3× 352 1.8× 78 0.7× 93 1.7k
V. Mikhelashvili Israel 21 1.2k 0.8× 521 1.2× 639 1.5× 126 0.6× 117 1.0× 77 1.4k
Howard R. Huff United States 19 1.1k 0.7× 347 0.8× 201 0.5× 109 0.6× 80 0.7× 92 1.2k
Tsu-Jae King United States 12 1.2k 0.7× 315 0.7× 273 0.6× 154 0.8× 72 0.6× 23 1.3k
Wakana Takeuchi Japan 15 752 0.5× 541 1.2× 294 0.7× 271 1.4× 90 0.8× 87 1.1k
А.С. Гудовских Russia 18 820 0.5× 348 0.8× 480 1.1× 253 1.3× 86 0.8× 150 1.0k
M. Kaiser Netherlands 14 752 0.5× 690 1.6× 244 0.6× 356 1.8× 110 1.0× 49 1.2k
Ch. Dieker Germany 15 699 0.4× 427 1.0× 475 1.1× 100 0.5× 87 0.8× 39 890
Joan Manel Ramírez France 20 975 0.6× 432 1.0× 531 1.2× 224 1.1× 53 0.5× 52 1.1k
G. Vellianitis Belgium 22 1.1k 0.7× 510 1.2× 253 0.6× 153 0.8× 121 1.1× 53 1.2k

Countries citing papers authored by H.‐H. Tseng

Since Specialization
Citations

This map shows the geographic impact of H.‐H. Tseng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.‐H. Tseng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.‐H. Tseng more than expected).

Fields of papers citing papers by H.‐H. Tseng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.‐H. Tseng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.‐H. Tseng. The network helps show where H.‐H. Tseng may publish in the future.

Co-authorship network of co-authors of H.‐H. Tseng

This figure shows the co-authorship network connecting the top 25 collaborators of H.‐H. Tseng. A scholar is included among the top collaborators of H.‐H. Tseng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.‐H. Tseng. H.‐H. Tseng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tseng, H.‐H., et al.. (2024). Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications. IEEE Journal of the Electron Devices Society. 12. 268–274. 2 indexed citations
2.
Kang, Jinfeng, X.Y. Liu, R.Q. Han, et al.. (2010). Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs. 17–21. 1 indexed citations
3.
Cheng, Tzu‐Hurng, et al.. (2010). Competitiveness between direct and indirect radiative transitions of Ge. Applied Physics Letters. 96(9). 49 indexed citations
4.
Young, Chadwin D., G. Bersuker, Chang Yong Kang, et al.. (2009). Reliability assessment of low &#x007C;V<inf>t</inf>&#x007C; metal high-&#x03BA; gate stacks for high performance applications. 65–66. 1 indexed citations
5.
Choi, Won‐Ho, Jungwoo Oh, Hyuk-Min Kwon, et al.. (2009). Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor. Microelectronic Engineering. 88(12). 3424–3427. 1 indexed citations
6.
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9.
Yang, Ji‐Woon, H. R. Harris, Chadwin D. Young, et al.. (2008). New hot-carrier degradation phenomenon in nano-scale floating body MOSFETS. 739–740. 2 indexed citations
10.
Hussain, Muhammad M., H. R. Harris, Casey Smith, et al.. (2008). Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs. IEEE Electron Device Letters. 29(5). 480–482. 17 indexed citations
11.
Kelly, D.Q., Rusty Harris, Jungwoo Oh, et al.. (2007). Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs. Microelectronic Engineering. 84(9-10). 2054–2057. 2 indexed citations
12.
Loh, W.Y., Injo Ok, Greg Smith, et al.. (2006). Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. Symposium on VLSI Technology. 100–101. 7 indexed citations
13.
Hussain, Muhammad M., Chadwin D. Young, D. C. Gilmer, et al.. (2006). A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications. Symposium on VLSI Technology. 208–209. 1 indexed citations
14.
Song, Sook‐Keun, M. Mahmood Hussain, C. Huffman, et al.. (2006). Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration. 13–14. 30 indexed citations
15.
Ma, T.P., H. Bu, X.W. Wang, et al.. (2005). Special reliability features for Hf-based high-/spl kappa/ gate dielectrics. IEEE Transactions on Device and Materials Reliability. 5(1). 36–44. 43 indexed citations
16.
Hobbs, C. C., L. R. C. Fonseca, A. A. Knizhnik, et al.. (2004). Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II. IEEE Transactions on Electron Devices. 51(6). 978–984. 135 indexed citations
17.
Hobbs, Chris, L.M. Fonseca, V. Dhandapani, et al.. (2004). Fermi level pinning at the polySi/metal oxide interface. 9–10. 74 indexed citations
18.
Gilmer, D. C., R. I. Hegde, James A. Smith, et al.. (2003). Compatibility of silicon gates with hafnium-based gate dielectrics. Microelectronic Engineering. 69(2-4). 138–144. 21 indexed citations
19.
Tseng, H.‐H., et al.. (2002). Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology. IEEE Electron Device Letters. 23(12). 704–706. 31 indexed citations
20.
Pfiester, J.R., J.D. Hayden, H.C. Kirsch, H.‐H. Tseng, & Umberto Ravaioli. (1993). An ultra-shallow buried-channel PMOST using boron penetration. IEEE Transactions on Electron Devices. 40(1). 207–213. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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