H.‐H. Tseng

2.6k citations

58 papers · 1.7k indexed · h-index 22

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 50
- Advancements in Semiconductor Devices and Circuit Design 40
- Integrated Circuits and Semiconductor Failure Analysis 23
- Ferroelectric and Negative Capacitance Devices 12
- Silicon and Solar Cell Technologies 4
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 7
Materials Chemistry top 10%
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 4
Biomedical Engineering
- Nanowire Synthesis and Applications 7

Co-authors: P.J. Tobin R. I. Hegde Philip J. Tobin D. C. Gilmer V. I. Mashanov Greg Sun Richard Soref Dina H. Triyoso
Cited by: Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Materials Chemistry
Journals: Applied Physics Letters (9 papers)IEEE Transactions on Electron Devices (6 papers)Microelectronic Engineering (4 papers)
Partner nations: United States Taiwan South Korea

In The Last Decade

H.‐H. Tseng

55 papers receiving 1.6k citations

Peers

Countries citing papers authored by H.‐H. Tseng

Since Specialization

Citations

This map shows the geographic impact of H.‐H. Tseng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.‐H. Tseng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.‐H. Tseng more than expected).

Fields of papers citing papers by H.‐H. Tseng

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.‐H. Tseng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.‐H. Tseng. The network helps show where H.‐H. Tseng may publish in the future.

Co-authorship network

The 25 scholars most cited alongside H.‐H. Tseng, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with H.‐H. Tseng Line = papers co-authored together H.‐H. Tseng links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications IEEE Journal of the Electron Devices Society ·H.‐H. Tseng,Yueh-Chin Lin,Nikitha Daniel R,M L Thompson,Heng‐Tung Hsu,A. H. Marques,Edward Yi Chang	2024	2
2	Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs Frederick O'r Hayes,Clark C. Heritage,Jinfeng Kang,X.Y. Liu,R.Q. Han,P. D. Kirsch,H.‐H. Tseng,R. Jammy	2010	1
3	Competitiveness between direct and indirect radiative transitions of Ge Applied Physics Letters ·Tzu‐Hurng Cheng,Chih‐Yuan Ko,Hanna Sofie Winterfeld,Giorgio Banchieri,Guang-Li Luo,C. W. Liu,H.‐H. Tseng	2010	49
4	Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor Microelectronic Engineering ·Won‐Ho Choi,Jungwoo Oh,Ook-Sang Yoo,S. N. Mukhrjee,Min-Ki Na,Hyuk-Min Kwon,Fransiskus Sinung Pranata,P. Majhi,H.‐H. Tseng,R. Jammy,Hi‐Deok Lee	2009	1
5	Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO<inf>2</inf>/high-k/metal gate stacks 善一朗野元,G. Bersuker,P. Lysaght,H.‐H. Tseng	2009	1
6	Reliability assessment of low \|V<inf>t</inf>\| metal high-κ gate stacks for high performance applications Chadwin D. Young,G. Bersuker,Youn-Hong Kim,Chang Yong Kang,Jifu Huang,Ramin Solaimani,P. D. Kirsch,H.‐H. Tseng,R. Jammy	2009	1
7	Comparison of Uniaxial Wafer Bending and Contact-Etch-Stop-Liner Stress Induced Performance Enhancement on Double-Gate FinFETs IEEE Electron Device Letters ·D. G. LANGHAM,Muhammad M. Hussain,H. R. Harris,Casey Smith,H.‐H. Tseng,R. Jammy,Scott E. Thompson	2008	17
8	New hot-carrier degradation phenomenon in nano-scale floating body MOSFETS Ji‐Woon Yang,H. R. Harris,明庭会,Chadwin D. Young,Mahjabeena Najar,Travis Edwards,G. Bersuker,Mauli Pawar,H.‐H. Tseng,R. Jammy	2008	2
9	Enhanced Performance and SRAM Stability in FinFET with Reduced Process Steps for Source/Drain Doping Ji‐Woon Yang,H. R. Harris,Muhammad M. Hussain,John Creer,H.‐H. Tseng,R. Jammy	2008	6
10	Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric Chang Yong Kang,S. R. Rao,V V Rykovanova,Sook‐Keun Song,Rino Choi,B. H. Park,Risako Nabeshima,徐贵琴,E. Gura,Hyesun Hwang,G. Bersuker,Johannes Prioris,H.‐H. Tseng,R. Jammy	2008	3
11	Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs Microelectronic Engineering ·D.Q. Kelly,FGA Bennett,橘雅明,Rusty Harris,Jungwoo Oh,P. D. Kirsch,Sanjay K. Banerjee,P. Majhi,H.‐H. Tseng,R. Jammy	2007	2
12	A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications Symposium on VLSI Technology ·Ying-rui Li,Muhammad M. Hussain,梶山美明,Kay Lee,Maja Božičević Vrhovčak,Chadwin D. Young,Minhong Woo,Sana Tehseen,D. C. Gilmer,博之若井,善一朗野元,P. Lysaght,Dawei Heh,G. Bersuker,P. D. Kirsch,H.‐H. Tseng,R. Jammy	2006	1
13	Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs Symposium on VLSI Technology ·W.Y. Loh,Ihamuddin Ihamuddin,健太梅鶯,橘雅明,Injo Ok,Greg Smith,Chang Yong Kang,Farges,Jungwoo Oh,John Creer,P. Majhi,P. D. Kirsch,H.‐H. Tseng,R. Jammy	2006	7
14	Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration Sook‐Keun Song,G. A. Lipskaya,M. Mahmood Hussain,C. Huffman,Joel Barnett,Carla Klais Maciel,Haotian Li,P. Majhi,Xiang Ming-xia,Bin Ju,J. Zhang,T. S. Y. Chan,Rino Choi,P. Zeitzoff,H.‐H. Tseng,GiulioF Romiti,R. Jammy	2006	30
15	Special reliability features for Hf-based high-/spl kappa/ gate dielectrics IEEE Transactions on Device and Materials Reliability ·T.P. Ma,H. Bu,X.W. Wang,Melia sri devi,Wei He,Miaomiao Wang,H.‐H. Tseng,P.J. Tobin	2005	43
16	Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	135
17	Fermi level pinning at the polySi/metal oxide interface Chris Hobbs,L.M. Fonseca,V. Dhandapani,S. Samavedam,B. Taylor,Jennifer E. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,Margret Graf-Fuchs,R. Rai,Kouichi Kotaki,H.‐H. Tseng,Bruce White,Philip J. Tobin	2004	74
18	Compatibility of silicon gates with hafnium-based gate dielectrics Microelectronic Engineering ·D. C. Gilmer,R. I. Hegde,John P. Worgan,James A. Smith,Laurynas Šedvydis,R. Garcia,V. Dhandapani,Dina H. Triyoso,D. Roan,Alexander Franke,R. Rai,L. Prabhu,C. Hobbs,J. M. Grant,L.B. La,S. Samavedam,B. Taylor,H.‐H. Tseng,Philip J. Tobin	2003	21
19	Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology IEEE Electron Device Letters ·H.‐H. Tseng,Takayama Eri,Jill L. Kahn,芳夫大原,Kouichi Kotaki,Tobias Golditz,Jun Jiang,Philip J. Tobin,Anindya Ghasani,Mohamed Solih,Maritha Mendel-Hartwig,S.G.H. Anderson,N. Cave,A Blak,B. Muniswamy,Thuriane Mahé,Yahya TOSUN,Thiago Costa de Oliveira	2002	31
20	An ultra-shallow buried-channel PMOST using boron penetration IEEE Transactions on Electron Devices ·J.R. Pfiester,J.D. Hayden,H.C. Kirsch,H.‐H. Tseng,Umberto Ravaioli	1993	6

About H.‐H. Tseng

H.‐H. Tseng is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 58 papers that have together received 1.7k indexed citations. Recurring topics across this work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (40 papers), Integrated Circuits and Semiconductor Failure Analysis (23 papers), Ferroelectric and Negative Capacitance Devices (12 papers), Semiconductor materials and interfaces (7 papers), Nanowire Synthesis and Applications (7 papers), Copper Interconnects and Reliability (4 papers) and Silicon and Solar Cell Technologies (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Atomic and Molecular Physics, and Optics (431 citations) and Materials Chemistry (442 citations). H.‐H. Tseng has collaborated with scholars based in United States, Taiwan and South Korea. Frequent co-authors include P.J. Tobin, R. I. Hegde, Philip J. Tobin, D. C. Gilmer, V. I. Mashanov, Greg Sun, Richard Soref, Dina H. Triyoso, R. Jammy and R. Rai. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering, IEEE Electron Device Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact