Injo Ok

1.0k total citations
49 papers, 551 citations indexed

About

Injo Ok is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Injo Ok has authored 49 papers receiving a total of 551 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in Injo Ok's work include Semiconductor materials and devices (43 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers) and Ferroelectric and Negative Capacitance Devices (22 papers). Injo Ok is often cited by papers focused on Semiconductor materials and devices (43 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers) and Ferroelectric and Negative Capacitance Devices (22 papers). Injo Ok collaborates with scholars based in United States, Switzerland and South Korea. Injo Ok's co-authors include Feng Zhu, Jack C. Lee, Manhong Zhang, J. Yum, Gaurav Thareja, Wilman Tsai, Changhwan Choi, Jung Hwan Yum, Han Zhao and Prashant Majhi and has published in prestigious journals such as Advanced Materials, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Injo Ok

49 papers receiving 528 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Injo Ok United States 14 537 199 140 37 24 49 551
J. Penaud Belgium 10 354 0.7× 157 0.8× 136 1.0× 57 1.5× 22 0.9× 31 372
D.E. Ioannou United States 11 400 0.7× 146 0.7× 77 0.6× 24 0.6× 30 1.3× 41 439
Jemima Gonsalves United States 7 294 0.5× 152 0.8× 229 1.6× 21 0.6× 37 1.5× 15 355
C.H. Ling Singapore 14 585 1.1× 95 0.5× 124 0.9× 27 0.7× 32 1.3× 77 614
P.D. Ye United States 10 628 1.2× 186 0.9× 202 1.4× 116 3.1× 34 1.4× 19 674
Rohit Galatage United States 13 596 1.1× 128 0.6× 233 1.7× 36 1.0× 18 0.8× 29 614
T. Onai Japan 16 677 1.3× 134 0.7× 173 1.2× 106 2.9× 14 0.6× 52 714
S.-H. Lo United States 7 909 1.7× 111 0.6× 234 1.7× 44 1.2× 52 2.2× 16 933
Yasuhiro Fukuzawa Japan 12 297 0.6× 308 1.5× 132 0.9× 36 1.0× 24 1.0× 20 374
Gérard Guillot France 10 274 0.5× 136 0.7× 139 1.0× 39 1.1× 79 3.3× 50 370

Countries citing papers authored by Injo Ok

Since Specialization
Citations

This map shows the geographic impact of Injo Ok's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Injo Ok with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Injo Ok more than expected).

Fields of papers citing papers by Injo Ok

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Injo Ok. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Injo Ok. The network helps show where Injo Ok may publish in the future.

Co-authorship network of co-authors of Injo Ok

This figure shows the co-authorship network connecting the top 25 collaborators of Injo Ok. A scholar is included among the top collaborators of Injo Ok based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Injo Ok. Injo Ok is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Büchel, Julian, Abu Sebastian, Benedikt Kersting, et al.. (2023). Gradient descent-based programming of analog in-memory computing cores. 1 indexed citations
2.
Philip, Timothy M., Kevin Brew, Ning Li, et al.. (2022). Design of projected phase-change memory mushroom cells for low-resistance drift. MRS Bulletin. 48(3). 228–236. 3 indexed citations
3.
Sarwat, Syed Ghazi, Manuel Le Gallo, Robert L. Bruce, et al.. (2022). Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase‐Change Memory. Advanced Materials. 35(37). e2201238–e2201238. 12 indexed citations
4.
Ok, Injo, et al.. (2012). Application of inline high resolution x-ray diffraction in monitoring Si/SiGe and conventional Si in SOI fin-shaped field effect transistor processes. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(4). 8 indexed citations
5.
Oh, Jungwoo, Kanghoon Jeon, Se‐Hoon Lee, et al.. (2012). High mobility CMOS transistors on Si/SiGe heterostructure channels. Microelectronic Engineering. 97. 26–28. 6 indexed citations
6.
Akarvardar, Kerem, Chadwin D. Young, Injo Ok, et al.. (2012). Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities. IEEE Electron Device Letters. 33(3). 351–353. 13 indexed citations
7.
Verzellesi, G., Andrea Padovani, Luca Larcher, et al.. (2010). Analysis of interface-trap effects in inversion-type InGaAs/ZrO<inf>2</inf> MOSFETs. IRIS UNIMORE (University of Modena and Reggio Emilia). 30. 532–535. 1 indexed citations
8.
Hobbs, C., Casey Smith, Hemant Adhikari, et al.. (2010). High Mobility SiGe Channel NonPlanar Devices. ECS Transactions. 28(5). 137–142. 5 indexed citations
9.
Ok, Injo, Feng Zhu, Soyeun Park, et al.. (2008). High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer. Applied Physics Letters. 93(13). 6 indexed citations
10.
Oye, Michael M., Brian Cobb, Feng Zhu, et al.. (2007). Importance of controlling oxygen incorporation into HfO2∕Si∕n-GaAs gate stacks. Journal of Applied Physics. 101(3). 7 indexed citations
11.
Ok, Injo, et al.. (2007). Temperature effects of Si interface passivation layer deposition on high-k III-V metal-oxide-semiconductor characteristics. Applied Physics Letters. 91(13). 12 indexed citations
12.
Ok, Injo, Hyun Chan Kim, Feng Zhu, et al.. (2007). Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 25(4). 1491–1494. 12 indexed citations
13.
Kim, Hyoung-Sub, Injo Ok, Manhong Zhang, et al.. (2007). Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer. Applied Physics Letters. 91(4). 31 indexed citations
14.
Loh, W.Y., Injo Ok, Greg Smith, et al.. (2006). Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. Symposium on VLSI Technology. 100–101. 7 indexed citations
15.
16.
Ok, Injo, Manhong Zhang, Feng Zhu, et al.. (2006). Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Applied Physics Letters. 89(22). 22 indexed citations
17.
18.
Ok, Injo, et al.. (2006). Characteristics of sputtered Hf1−xSixO2∕Si∕GaAs gate stacks. Applied Physics Letters. 89(4). 23 indexed citations
19.
Ok, Injo, Hyun Chan Kim, Feng Zhu, et al.. (2006). Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation. 88. 45–46. 1 indexed citations
20.
Choi, Changhwan, Chang Yong Kang, Se Jong Rhee, et al.. (2005). Fabrication of TaN-gated ultra-thin mosfets (eot >1.0nm) with HfO/sub 2/ using a novel oxygen scavenging process for sub 65nm application. 226–227. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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