S. Samavedam

2.1k citations

36 papers · 1.3k indexed · h-index 18

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 35
- Advancements in Semiconductor Devices and Circuit Design 28
- Integrated Circuits and Semiconductor Failure Analysis 14
- Ferroelectric and Negative Capacitance Devices 9
- Silicon Carbide Semiconductor Technologies 2
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides 5
Atomic and Molecular Physics, and Optics top 10%
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 2
Mechanics of Materials
- Metal and Thin Film Mechanics 3

Co-authors: B. E. White Dina H. Triyoso R. I. Hegde Philip J. Tobin L. R. C. Fonseca J. Schaeffer D. Roan D. C. Gilmer
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: IEEE Transactions on Electron Devices (5 papers)IEEE Electron Device Letters (3 papers)Applied Physics Letters (3 papers)
Partner nations: United States Japan France

In The Last Decade

S. Samavedam

34 papers receiving 1.2k citations

Peers

Countries citing papers authored by S. Samavedam

Since Specialization

Citations

This map shows the geographic impact of S. Samavedam's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Samavedam with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Samavedam more than expected).

Fields of papers citing papers by S. Samavedam

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Samavedam. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Samavedam. The network helps show where S. Samavedam may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Samavedam, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Samavedam Line = papers co-authored together S. Samavedam links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	14-nm FinFET Technology for Analog and RF Applications IEEE Transactions on Electron Devices ·Jagar Singh,Ronghao Peng,Teddy Alfredo Vera Arteaga,Kerrin Perry,Anirban Bandyopadhyay,Xingxing Zhang,恵利加竹田,A. Bellaouar,Josef Watts,Lucía Aguilera,S. Samavedam	2017	70
2	Novel N/PFET Vt control by TiN plasma nitridation for aggressive gate scaling M. Togo,Suvi Rovio,Xingxing Zhang,Dina H. Triyoso,Luis Carlos Castro,Ya-xiong Han,Suresh Uppal,S. Dağ,(unknown),M.A. Geluk,Shoib Allan Myint,Suraj Patil,M. Eller,S. Samavedam	2016	2
3	Analysis of parasitic resistance in double gate FinFETs with different fin lengths 真砂子菅原,K. Maitra,Chun-Chen Yeh,P. Zeitzoff,M. Raymond,P. Kulkarni,K. Suntinger,T. Yamashita,V. Basker,T. Standaert,S. Samavedam,H. Bu,Granda Abad	2011	6
4	Strained SiGe Channels for Band-Edge PMOS Threshold Voltages With Metal Gates and High- $k$ Dielectrics IEEE Transactions on Electron Devices ·D. C. Gilmer,J. Schaeffer,William J. Taylor,C. Capasso,アユミタニムラ,Y. S. Kim,D. Tekleab,B. Winstead,S. Samavedam	2010	20
5	Modeling and Analysis of Parasitic Resistance in Double-Gate FinFETs IEEE Transactions on Electron Devices ·D. Tekleab,S. Samavedam,P. Zeitzoff	2009	26
6	Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes ECS Transactions ·J. Schaeffer,Mark Raymond,D. C. Gilmer,R. Gregory,B. Taylor,Hartmut Sell,Dina H. Triyoso,Rama I. Hegde,S. Samavedam	2008	0
7	Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate Thin Solid Films ·K. Reid,Wang Zuo-h,Sadao Sasaki,Dina H. Triyoso,S. Samavedam,D. C. Gilmer,Chris Twin	2008	7
8	Hafnium zirconate gate dielectric for advanced gate stack applications Journal of Applied Physics ·R. I. Hegde,Dina H. Triyoso,S. Samavedam,B. E. White	2007	95
9	Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics Journal of Applied Physics ·J. Schaeffer,C. Capasso,R. Gregory,D. C. Gilmer,L. R. C. Fonseca,M. Raymond,M.S. Shotwell,M. Kottke,S. Samavedam,Philip J. Tobin,B. E. White	2007	41
10	Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso,R. I. Hegde,Юсеф Н.Ю.,R. Gregory,C. Antonani,Marianne Canonico,D. Roan,E.A. Hebert,Graziella Pavon-Djavid,Jian Jiang,R. Rai,V. Kaushik,S. Samavedam,N. Rochat	2007	44
11	On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics Journal of Applied Physics ·J. Schaeffer,D. C. Gilmer,S. Samavedam,M. Raymond,A. Haggag,S. Kalpat,真鍋和,C. Capasso,B. E. White	2007	13
12	Impact of Zr addition on properties of atomic layer deposited HfO2 Applied Physics Letters ·Dina H. Triyoso,R. I. Hegde,Юсеф Н.Ю.,D. Roan,Philip J. Tobin,S. Samavedam,B. E. White,R. Gregory,C. Antonani	2006	76
13	Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	135
14	Fermi level pinning at the polySi/metal oxide interface Chris Hobbs,L.M. Fonseca,V. Dhandapani,S. Samavedam,B. Taylor,Jennifer E. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,Margret Graf-Fuchs,R. Rai,Kouichi Kotaki,H.‐H. Tseng,Bruce White,Philip J. Tobin	2004	74
15	Contributions to the effective work function of platinum on hafnium dioxide Applied Physics Letters ·J. Schaeffer,L. R. C. Fonseca,S. Samavedam,Yong Liang,Philip J. Tobin,B. E. White	2004	169
16	ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability H.‐H. Tseng,Michael Ramon,Kouichi Kotaki,Philip J. Tobin,Dina H. Triyoso,J. M. Grant,Kawi Boedisetio,D. Roan,S. Samavedam,D. C. Gilmer,S. Kalpat,Chris Hobbs,W. Taylor,Érick Soares dos Reis,B. E. White	2004	7
17	Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I IEEE Transactions on Electron Devices ·C. C. Hobbs,L. R. C. Fonseca,A. A. Knizhnik,V. Dhandapani,S. Samavedam,W. Taylor,J. M. Grant,Laurynas Šedvydis,Dina H. Triyoso,R. I. Hegde,D. C. Gilmer,R. Garcia,D. Roan,M. L. Lovejoy,R. Rai,E.A. Hebert,H.‐H. Tseng,S.G.H. Anderson,B. E. White,P.J. Tobin	2004	182
18	Compatibility of silicon gates with hafnium-based gate dielectrics Microelectronic Engineering ·D. C. Gilmer,R. I. Hegde,John P. Worgan,James A. Smith,Laurynas Šedvydis,R. Garcia,V. Dhandapani,Dina H. Triyoso,D. Roan,Alexander Franke,R. Rai,L. Prabhu,C. Hobbs,J. M. Grant,L.B. La,S. Samavedam,B. Taylor,H.‐H. Tseng,Philip J. Tobin	2003	21
19	Metal gates for advanced sub-80-nm SOI CMOS technology Baolei Cheng,B. Maiti,S. Samavedam,Jennifer E. Grant,B. Taylor,Philip J. Tobin,J. Mogab	2002	22
20	Characterization of High-k Dielectric Films with Tunneling AFM MRS Proceedings ·Xiangdong Wang,J. Kulik,N. V. Edwards,S. Samavedam,Shi-Feng Lu	2002	3

About S. Samavedam

S. Samavedam is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Mechanics of Materials, having authored 36 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Ferroelectric and Negative Capacitance Devices (9 papers), Electronic and Structural Properties of Oxides (5 papers), Metal and Thin Film Mechanics (3 papers), Copper Interconnects and Reliability (2 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.2k citations), Materials Chemistry (357 citations) and Atomic and Molecular Physics, and Optics (199 citations). S. Samavedam has collaborated with scholars based in United States, Japan and France. Frequent co-authors include B. E. White, Dina H. Triyoso, R. I. Hegde, Philip J. Tobin, L. R. C. Fonseca, J. Schaeffer, D. Roan, D. C. Gilmer, R. Garcia and V. Dhandapani. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact