Bernhard Stampfer

508 total citations
31 papers, 376 citations indexed

About

Bernhard Stampfer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Bernhard Stampfer has authored 31 papers receiving a total of 376 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 2 papers in Condensed Matter Physics. Recurrent topics in Bernhard Stampfer's work include Advancements in Semiconductor Devices and Circuit Design (28 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Bernhard Stampfer is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (28 papers), Semiconductor materials and devices (22 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). Bernhard Stampfer collaborates with scholars based in Austria, Belgium and United States. Bernhard Stampfer's co-authors include Tibor Grasser, Michael Waltl, Theresia Knobloch, Yu. Yu. Illarionov, G. Rzepa, B. Kaczer, Alexander Grill, F. Schanovsky, Marco M. Furchi and Joerg Appenzeller and has published in prestigious journals such as Advanced Materials, Nature Communications and ACS Nano.

In The Last Decade

Bernhard Stampfer

30 papers receiving 369 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Bernhard Stampfer Austria	12	327	149	30	16	15	31	376
Karine Florent Belgium	11	444 1.4×	295 2.0×	23 0.8×	24 1.5×	16 1.1×	20	479
Nujhat Tasneem United States	12	372 1.1×	226 1.5×	30 1.0×	8 0.5×	7 0.5×	32	392
Gihun Choe United States	12	323 1.0×	141 0.9×	25 0.8×	10 0.6×	11 0.7×	32	342
Véronique Sousa France	8	181 0.6×	196 1.3×	37 1.2×	16 1.0×	22 1.5×	12	224
Chengji Jin China	12	516 1.6×	236 1.6×	38 1.3×	30 1.9×	15 1.0×	52	541
Dirk Utess Germany	5	427 1.3×	200 1.3×	17 0.6×	10 0.6×	15 1.0×	10	435
Chen-Feng Hsu Taiwan	8	188 0.6×	181 1.2×	43 1.4×	34 2.1×	16 1.1×	15	262
Christian Schleich Austria	10	325 1.0×	242 1.6×	41 1.4×	21 1.3×	31 2.1×	22	454
Xinlv Duan China	12	239 0.7×	77 0.5×	29 1.0×	9 0.6×	9 0.6×	27	247
Sheng‐Kai Su Taiwan	11	308 0.9×	315 2.1×	104 3.5×	30 1.9×	20 1.3×	25	437

Countries citing papers authored by Bernhard Stampfer

Since Specialization

Citations

This map shows the geographic impact of Bernhard Stampfer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bernhard Stampfer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bernhard Stampfer more than expected).

Fields of papers citing papers by Bernhard Stampfer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bernhard Stampfer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bernhard Stampfer. The network helps show where Bernhard Stampfer may publish in the future.

Co-authorship network of co-authors of Bernhard Stampfer

This figure shows the co-authorship network connecting the top 25 collaborators of Bernhard Stampfer. A scholar is included among the top collaborators of Bernhard Stampfer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bernhard Stampfer. Bernhard Stampfer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Waltl, Michael, Bernhard Stampfer, & Tibor Grasser. (2024). Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements. IEEE Transactions on Device and Materials Reliability. 24(2). 168–173. 1 indexed citations

Ravichandran, Harikrishnan, Theresia Knobloch, Shiva Subbulakshmi Radhakrishnan, et al.. (2024). A stochastic encoder using point defects in two-dimensional materials. Nature Communications. 15(1). 10562–10562. 8 indexed citations

Stampfer, Bernhard, et al.. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods. IEEE Transactions on Electron Devices. 70(8). 4326–4331. 1 indexed citations

Ravichandran, Harikrishnan, Theresia Knobloch, Andrew Pannone, et al.. (2023). Observation of Rich Defect Dynamics in Monolayer MoS₂. ACS Nano. 17(15). 14449–14460. 13 indexed citations

Knobloch, Theresia, Dominic Waldhoer, Bernhard Stampfer, et al.. (2023). Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂Transistors. IEEE Transactions on Device and Materials Reliability. 23(3). 355–362. 1 indexed citations

Stampfer, Bernhard, et al.. (2023). Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods. IEEE Transactions on Electron Devices. 70(8). 4320–4325. 3 indexed citations

Feil, Maximilian W., Christian Schleich, Bernhard Stampfer, et al.. (2023). Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations. Materials science forum. 1090. 119–126. 3 indexed citations

Waltl, Michael, et al.. (2023). Physical Modelling of Charge Trapping Effects in SiC MOSFETs. Materials science forum. 1090. 185–191.

Schleich, Christian, et al.. (2022). Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory. IEEE Transactions on Electron Devices. 69(8). 4479–4485. 12 indexed citations

10.

Waldhoer, Dominic, Christian Schleich, Bernhard Stampfer, et al.. (2021). Toward Automated Defect Extraction From Bias Temperature Instability Measurements. IEEE Transactions on Electron Devices. 68(8). 4057–4063. 27 indexed citations

11.

Stampfer, Bernhard, et al.. (2021). On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors. IEEE Transactions on Device and Materials Reliability. 21(2). 199–206. 4 indexed citations

12.

Stampfer, Bernhard, et al.. (2021). Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies. Crystals. 11(9). 1150–1150. 1 indexed citations

13.

Grasser, Tibor, Barry O’Sullivan, B. Kaczer, et al.. (2021). CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. 1–6. 1 indexed citations

14.

Stampfer, Bernhard, F. Schanovsky, Tibor Grasser, & Michael Waltl. (2020). Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors. Micromachines. 11(4). 446–446. 11 indexed citations

15.

Stampfer, Bernhard, Marko Simicic, Pieter Weckx, et al.. (2020). Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays. IEEE Transactions on Device and Materials Reliability. 20(2). 251–257. 2 indexed citations

16.

Waltl, Michael, Bernhard Stampfer, G. Rzepa, B. Kaczer, & Tibor Grasser. (2020). Separation of electron and hole trapping components of PBTI in SiON nMOS transistors. Microelectronics Reliability. 114. 113746–113746. 15 indexed citations

17.

Knobloch, Theresia, G. Rzepa, Yu. Yu. Illarionov, et al.. (2018). A Physical Model for the Hysteresis in MoS₂ Transistors. IEEE Journal of the Electron Devices Society. 6. 972–978. 58 indexed citations

18.

Stampfer, Bernhard, Feng Zhang, Yu. Yu. Illarionov, et al.. (2018). Characterization of Single Defects in Ultrascaled MoS₂ Field-Effect Transistors. ACS Nano. 12(6). 5368–5375. 63 indexed citations

19.

Grill, Alexander, Bernhard Stampfer, Michael Waltl, et al.. (2017). Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs. 3B–5.1. 11 indexed citations

20.

Grasser, Tibor, Michael Waltl, Katja Puschkarsky, et al.. (2017). Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress. 6A–2.1. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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