Bernhard Stampfer

508 citations

31 papers · 376 · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Materials Chemistry
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials

Papers in

Electrical and Electronic Engineering 31
- Advancements in Semiconductor Devices and Circuit Design 28
- Semiconductor materials and devices 22
- Integrated Circuits and Semiconductor Failure Analysis 13
- Advanced Memory and Neural Computing 6
- Ferroelectric and Negative Capacitance Devices 6
- Silicon Carbide Semiconductor Technologies 3
Materials Chemistry 6
- 2D Materials and Applications 5
- Graphene research and applications 2

Co-authors: Tibor Grasser (30 shared papers)Michael Waltl (29 shared papers)Theresia Knobloch (11 shared papers)Yu. Yu. Illarionov (4 shared papers)G. Rzepa (9 shared papers)B. Kaczer (10 shared papers)Alexander Grill (5 shared papers)F. Schanovsky (4 shared papers)
Journals: IEEE Transactions on Electron Devices (4 papers)IEEE Transactions on Device and Materials Reliability (4 papers)ACS Nano (2 papers)Microelectronics Reliability (2 papers)IEEE Journal of the Electron Devices Society (1 paper)
Partner nations: Austria Belgium United States

In The Last Decade

Bernhard Stampfer

30 papers receiving 369 citations

Peers

Countries citing papers authored by Bernhard Stampfer

Since Specialization

Citations

This map shows the geographic impact of Bernhard Stampfer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bernhard Stampfer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bernhard Stampfer more than expected).

Fields of papers citing papers by Bernhard Stampfer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bernhard Stampfer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bernhard Stampfer. The network helps show where Bernhard Stampfer may publish in the future.

Co-authors

The 25 scholars most cited alongside Bernhard Stampfer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bernhard Stampfer Line = papers co-authored together Bernhard Stampfer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 31 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Characterization of Single Defects in Ultrascaled MoS₂ Field-Effect Transistors ACS Nano ·Bernhard Stampfer, Feng Zhang, Yu. Yu. Illarionov, Theresia Knobloch, Peng Wu, Michael Waltl, Alexander Grill, Joerg Appenzeller, Tibor Grasser	2018	63
2	A Physical Model for the Hysteresis in MoS₂ Transistors IEEE Journal of the Electron Devices Society ·Theresia Knobloch, G. Rzepa, Yu. Yu. Illarionov, Michael Waltl, F. Schanovsky, Bernhard Stampfer, Marco M. Furchi, Thomas Mueller, Tibor Grasser	2018	58
3	Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Advanced Materials ·Michael Waltl, Theresia Knobloch, Κωνσταντίνος Τσέλιος, Lado Filipovic, Bernhard Stampfer, Y. Hernandez-Barrios, Dominic Waldhör, Yu. Yu. Illarionov, B. Kaczer, Tibor Grasser	2022	37
4	Toward Automated Defect Extraction From Bias Temperature Instability Measurements IEEE Transactions on Electron Devices ·Dominic Waldhoer, Christian Schleich, Jakob Michl, Bernhard Stampfer, Κωνσταντίνος Τσέλιος, E.G. Ioannidis, H. Enichlmair, Michael Waltl, Tibor Grasser	2021	27
5	Efficient physical defect model applied to PBTI in high-κ stacks G. Rzepa, J. Franco, A. Subirats, Markus Jech, Adrian Chasin, Alexander Grill, Michael Waltl, Theresia Knobloch, Bernhard Stampfer, T. Chiarella, Naoto Horiguchi, L.-Å. Ragnarsson, D. Linten, B. Kaczer, Tibor Grasser	2017	27
6	Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS 2021 IEEE International Electron Devices Meeting (IEDM) ·Jakob Michl, Alexander Grill, Bernhard Stampfer, Dominic Waldhoer, Christian Schleich, Theresia Knobloch, E.G. Ioannidis, H. Enichlmair, Rainer Minixhofer, B. Kaczer, Bertrand Parvais, B. Govoreanu, Iuliana Radu, Tibor Grasser, Michael Waltl	2021	18
7	Separation of electron and hole trapping components of PBTI in SiON nMOS transistors Microelectronics Reliability ·Michael Waltl, Bernhard Stampfer, G. Rzepa, B. Kaczer, Tibor Grasser	2020	15
8	Observation of Rich Defect Dynamics in Monolayer MoS₂ ACS Nano ·Harikrishnan Ravichandran, Theresia Knobloch, Andrew Pannone, Alexander Karl, Bernhard Stampfer, Dominic Waldhoer, Yikai Zheng, Najam U Sakib, Muhtasim Ul Karim Sadaf, Rahul Pendurthi, Riccardo Torsi, Joshua A. Robinson, Tibor Grasser, Saptarshi Das	2023	13
9	Single- Versus Multi-Step Trap Assisted Tunneling Currents—Part I: Theory IEEE Transactions on Electron Devices ·Christian Schleich, Dominic Waldhör, Theresia Knobloch, Weifeng Zhou, Bernhard Stampfer, Jakob Michl, Michael Waltl, Tibor Grasser	2022	12
10	The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release Tibor Grasser, B. Kaczer, Barry O’Sullivan, G. Rzepa, Bernhard Stampfer, Michael Waltl	2020	12
11	Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors Micromachines ·Bernhard Stampfer, F. Schanovsky, Tibor Grasser, Michael Waltl	2020	11
12	Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs Alexander Grill, Bernhard Stampfer, Michael Waltl, Ki‐Sik Im, J.‐H. Lee, Clemens Ostermaier, H. Ceric, Tibor Grasser	2017	11
13	Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress Tibor Grasser, Michael Waltl, Katja Puschkarsky, Bernhard Stampfer, G. Rzepa, Gregor Pobegen, H. Reisinger, Hiroaki Arimura, B. Kaczer	2017	11
14	Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs Solid-State Electronics ·Alexander Grill, Bernhard Stampfer, Ki‐Sik Im, J.‐H. Lee, Clemens Ostermaier, H. Ceric, Michael Waltl, Tibor Grasser	2019	10
15	Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors Tibor Grasser, Bernhard Stampfer, Michael Waltl, G. Rzepa, Karl Rupp, F. Schanovsky, Gregor Pobegen, Katja Puschkarsky, H. Reisinger, Barry O’Sullivan, B. Kaczer	2018	10
16	A stochastic encoder using point defects in two-dimensional materials Nature Communications ·Harikrishnan Ravichandran, Theresia Knobloch, Shiva Subbulakshmi Radhakrishnan, Christoph Wilhelmer, Sergei P. Stepanoff, Bernhard Stampfer, Subir Ghosh, Aaryan Oberoi, Dominic Waldhoer, Chen Chen, Joan M. Redwing, Douglas E. Wolfe, Tibor Grasser, Saptarshi Das	2024	8
17	Reliability Assessment of Double-Gated Wafer-Scale MoS₂ Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses Alexandros Provias, Theresia Knobloch, A. Kitamura, Kevin P. O’Brien, C. J. Dorow, Dominic Waldhoer, Bernhard Stampfer, Ashish Verma Penumatcha, S. Lee, R. Ramamurthy, Scott B. Clendenning, Michael Waltl, Uygar E. Avci, Tibor Grasser	2023	7
18	On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors IEEE Transactions on Device and Materials Reliability ·Κωνσταντίνος Τσέλιος, Dominic Waldhör, Bernhard Stampfer, Jakob Michl, E.G. Ioannidis, H. Enichlmair, Tibor Grasser, Michael Waltl	2021	4
19	Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods IEEE Transactions on Electron Devices ·Paul Stampfer, Bernhard Stampfer, Tibor Grasser, Michael Waltl	2023	3
20	Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations Materials science forum ·A.V. Vasil'ev, Maximilian W. Feil, Christian Schleich, Bernhard Stampfer, G. Rzepa, Gregor Pobegen, Tibor Grasser, Michael Waltl	2023	3

About Bernhard Stampfer

Bernhard Stampfer is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Infectious Diseases, having authored 31 papers that have together received 376 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (28 papers), Semiconductor materials and devices (22 papers), Integrated Circuits and Semiconductor Failure Analysis (13 papers), Advanced Memory and Neural Computing (6 papers), Ferroelectric and Negative Capacitance Devices (6 papers), 2D Materials and Applications (5 papers), Silicon Carbide Semiconductor Technologies (3 papers) and Graphene research and applications (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (327 citations), Materials Chemistry (149 citations), Hardware and Architecture (9 citations), Electronic, Optical and Magnetic Materials (15 citations) and Biomedical Engineering (30 citations). Bernhard Stampfer has collaborated with scholars based in Austria, Belgium and United States. Frequent co-authors include Tibor Grasser, Michael Waltl, Theresia Knobloch, Yu. Yu. Illarionov, G. Rzepa, B. Kaczer, Alexander Grill, F. Schanovsky, Joerg Appenzeller and Feng Zhang. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Device and Materials Reliability, ACS Nano, Microelectronics Reliability and IEEE Journal of the Electron Devices Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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