Niels Posthuma

2.8k citations

112 papers · 2.3k indexed · h-index 27

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 57
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials 14
Electrical and Electronic Engineering top 2%
- Silicon and Solar Cell Technologies 45
- Semiconductor materials and devices 44
- Silicon Carbide Semiconductor Technologies 37
- Thin-Film Transistor Technologies 21
- solar cell performance optimization 15
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 22
Materials Chemistry top 10%

Co-authors: Stefaan Decoutere Steve Stoffels Benoit Bakeroot Shuzhen You Andrea Natale Tallarico C. Fiegna Jef Poortmans Denis Marcon
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices (12 papers)IEEE Electron Device Letters (9 papers)Microelectronics Reliability (6 papers)
Partner nations: Belgium Italy Netherlands

In The Last Decade

Niels Posthuma

110 papers receiving 2.3k citations

Peers

Countries citing papers authored by Niels Posthuma

Since Specialization

Citations

This map shows the geographic impact of Niels Posthuma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Niels Posthuma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Niels Posthuma more than expected).

Fields of papers citing papers by Niels Posthuma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Niels Posthuma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Niels Posthuma. The network helps show where Niels Posthuma may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Niels Posthuma, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Niels Posthuma Line = papers co-authored together Niels Posthuma links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate Ghent University Academic Bibliography (Ghent University) ·Kieran Petrasek,C. Fiegna,Benoit Bakeroot,Matteo Borga,Niels Posthuma,Stefaan Decoutere,Enrico Sangiorgi,Andrea Natale Tallarico	2024	2
2	P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime IEEE Electron Device Letters ·Andrea Natale Tallarico,Kieran Petrasek,Matteo Borga,Benoit Bakeroot,Niels Posthuma,Moshe Doron,Stefaan Decoutere,E. Sangiorgi,C. Fiegna	2024	3
3	Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering physica status solidi (a) ·Matteo Borga,Niels Posthuma,Anurag Vohra,Benoit Bakeroot,Stefaan Decoutere	2024	4
4	A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination Solid-State Electronics ·Lionel Trojman,Iacia MVMS,Brice De Jaeger,Niels Posthuma,Stefaan Decoutere,Benoit Bakeroot	2023	1
5	Role of the GaN-on-Si Epi-Stack on ΔR _ON Caused by Back-Gating Stress IEEE Transactions on Electron Devices ·Kieran Petrasek,Matteo Borga,Margaret M. McQuiggan,Benoit Bakeroot,Niels Posthuma,Anurag Vohra,Stefaan Decoutere,C. Fiegna,Andrea Natale Tallarico	2023	3
6	Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices IEEE Transactions on Electron Devices ·Nicola Modolo,Carlo De Santi,V. G. Dilanyan,T.C. Schnauffer,Matteo Borga,Niels Posthuma,Benoit Bakeroot,Shuzhen You,Stefaan Decoutere,Andrea Bevilacqua,A. Neviani,Gaudenzio Meneghesso,Enrico Zanoni,Matteo Meneghini	2022	4
7	The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs IEEE Electron Device Letters ·Kieran Petrasek,Matteo Borga,Benoit Bakeroot,Niels Posthuma,Stefaan Decoutere,E. Sangiorgi,C. Fiegna,Andrea Natale Tallarico	2022	11
8	Stability of Monolithically Integrated Power devices for 200V GaN-on-SOI power circuits platform Feitoza João Vitor Fonseca,Elliott K. Tannor,D. Wellekens,Moshe Doron,Matteo Borga,Alberto Jovellar,Benoit Bakeroot,Niels Posthuma,Stefaan Decoutere	2022	1
9	High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs IEEE Transactions on Electron Devices ·Kieran Petrasek,C. Fiegna,Niels Posthuma,Matteo Borga,Benoit Bakeroot,Stefaan Decoutere,Andrea Natale Tallarico	2021	26
10	GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V _T instability effect Semiconductor Science and Technology ·Shuzhen You,Xiangdong Li,Karen Geens,Niels Posthuma,Ming Zhao,Hu Liang,G. Groeseneken,Stefaan Decoutere	2021	1
11	TCAD Modeling of the Dynamic V _TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs IEEE Transactions on Electron Devices ·Andrea Natale Tallarico,Kieran Petrasek,Benoit Bakeroot,Matteo Borga,Niels Posthuma,Stefaan Decoutere,E. Sangiorgi,C. Fiegna	2021	24
12	Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics IEEE Transactions on Power Electronics ·Xiangdong Li,Niels Posthuma,Benoit Bakeroot,Hu Liang,Shuzhen You,Zhicheng Wu,Ming Zhao,G. Groeseneken,Stefaan Decoutere	2020	34
13	Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs IEEE Transactions on Device and Materials Reliability ·Kieran Petrasek,Niels Posthuma,Benoit Bakeroot,Matteo Borga,Stefaan Decoutere,Andrea Natale Tallarico	2020	7
14	Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate Ghent University Academic Bibliography (Ghent University) ·Benoit Bakeroot,Steve Stoffels,Niels Posthuma,D. Wellekens,Stefaan Decoutere	2019	31
15	Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs IEEE Transactions on Electron Devices ·Matteo Borga,Matteo Meneghini,Steve Stoffels,Xiangdong Li,Niels Posthuma,M. Van Hove,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2018	45
16	Methodology and More Accurate Electrothermal Model for Fast Simulation of Power HEMTs Aleš Chvála,Juraj Marek,B. Carpentier,Ababaw Andarge Gedefaw,A. Šatka,Steve Stoffels,Niels Posthuma,Stefaan Decoutere,D. Donoval	2018	0
17	Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs IEEE Transactions on Electron Devices ·Matteo Borga,Matteo Meneghini,Isabella Rossetto,Steve Stoffels,Niels Posthuma,M. Van Hove,Denis Marcon,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni	2017	43
18	Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs IEEE Electron Device Letters ·Andrea Natale Tallarico,Steve Stoffels,Paolo Magnone,Niels Posthuma,E. Sangiorgi,Stefaan Decoutere,C. Fiegna	2016	139
19	Wearable Battery-free Wireless 2-channel EEG Systems Powered by Energy Scavengers SHILAP Revista de lepidopterología ·D Lemos,Vladimir Leonov,Refet Fırat Yazıcıoğlu,Tom Torfs,Chris Van Hoof,Niels Posthuma,Ruud Vullers	2008	25
20	Development of stand-alone germanium solar cells for application in space using spin-on diffusants 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of ·Niels Posthuma,Giovanni Flamand,Jef Poortmans	2003	7

About Niels Posthuma

Niels Posthuma is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 112 papers that have together received 2.3k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (57 papers), Silicon and Solar Cell Technologies (45 papers), Semiconductor materials and devices (44 papers), Silicon Carbide Semiconductor Technologies (37 papers), Semiconductor materials and interfaces (22 papers), Thin-Film Transistor Technologies (21 papers), solar cell performance optimization (15 papers) and Ga2O3 and related materials (14 papers). The work is most often cited by research in Condensed Matter Physics (1.6k citations), Electronic, Optical and Magnetic Materials (724 citations) and Electrical and Electronic Engineering (1.9k citations). Niels Posthuma has collaborated with scholars based in Belgium, Italy and Netherlands. Frequent co-authors include Stefaan Decoutere, Steve Stoffels, Benoit Bakeroot, Shuzhen You, Andrea Natale Tallarico, C. Fiegna, Jef Poortmans, Denis Marcon, Giovanni Flamand and E. Sangiorgi. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronics Reliability, Solar Energy Materials and Solar Cells and Progress in Photovoltaics Research and Applications.

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