Niels Posthuma

2.8k total citations
112 papers, 2.3k citations indexed

About

Niels Posthuma is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Niels Posthuma has authored 112 papers receiving a total of 2.3k indexed citations (citations by other indexed papers that have themselves been cited), including 104 papers in Electrical and Electronic Engineering, 57 papers in Condensed Matter Physics and 32 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Niels Posthuma's work include GaN-based semiconductor devices and materials (57 papers), Silicon and Solar Cell Technologies (45 papers) and Semiconductor materials and devices (44 papers). Niels Posthuma is often cited by papers focused on GaN-based semiconductor devices and materials (57 papers), Silicon and Solar Cell Technologies (45 papers) and Semiconductor materials and devices (44 papers). Niels Posthuma collaborates with scholars based in Belgium, Italy and Netherlands. Niels Posthuma's co-authors include Stefaan Decoutere, Steve Stoffels, Benoit Bakeroot, Shuzhen You, Andrea Natale Tallarico, C. Fiegna, Jef Poortmans, Denis Marcon, E. Sangiorgi and Giovanni Flamand and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Niels Posthuma

110 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Niels Posthuma Belgium 27 1.9k 1.6k 724 531 453 112 2.3k
Ling Yang China 23 1.3k 0.7× 1.4k 0.8× 625 0.9× 461 0.9× 370 0.8× 154 1.8k
Urban Forsberg Sweden 23 852 0.4× 862 0.5× 517 0.7× 285 0.5× 564 1.2× 79 1.5k
Huarui Sun China 19 682 0.4× 462 0.3× 279 0.4× 126 0.2× 873 1.9× 72 1.3k
Benjamin Leung United States 21 469 0.2× 933 0.6× 598 0.8× 319 0.6× 682 1.5× 40 1.3k
J. Kuzmı́k Slovakia 29 2.2k 1.2× 2.7k 1.7× 1.3k 1.8× 703 1.3× 660 1.5× 135 3.1k
Fabrice Oehler France 25 895 0.5× 755 0.5× 444 0.6× 681 1.3× 900 2.0× 99 1.9k
Antti Tukiainen Finland 22 1.1k 0.6× 188 0.1× 101 0.1× 884 1.7× 416 0.9× 129 1.5k
Chris W. Bumby New Zealand 27 1.2k 0.6× 1.7k 1.1× 435 0.6× 94 0.2× 270 0.6× 102 2.3k
Daisuke Ueda Japan 22 1.4k 0.7× 1.3k 0.8× 583 0.8× 309 0.6× 320 0.7× 100 1.8k
D. I. Florescu United States 13 420 0.2× 686 0.4× 175 0.2× 244 0.5× 629 1.4× 26 962

Countries citing papers authored by Niels Posthuma

Since Specialization
Citations

This map shows the geographic impact of Niels Posthuma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Niels Posthuma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Niels Posthuma more than expected).

Fields of papers citing papers by Niels Posthuma

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Niels Posthuma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Niels Posthuma. The network helps show where Niels Posthuma may publish in the future.

Co-authorship network of co-authors of Niels Posthuma

This figure shows the co-authorship network connecting the top 25 collaborators of Niels Posthuma. A scholar is included among the top collaborators of Niels Posthuma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Niels Posthuma. Niels Posthuma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fiegna, C., Benoit Bakeroot, Matteo Borga, et al.. (2024). Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. Ghent University Academic Bibliography (Ghent University). 1–6. 2 indexed citations
2.
Tallarico, Andrea Natale, Matteo Borga, Benoit Bakeroot, et al.. (2024). P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime. IEEE Electron Device Letters. 45(9). 1630–1633. 3 indexed citations
3.
Borga, Matteo, Niels Posthuma, Anurag Vohra, Benoit Bakeroot, & Stefaan Decoutere. (2024). Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering. physica status solidi (a). 221(21). 4 indexed citations
4.
Trojman, Lionel, et al.. (2023). A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination. Solid-State Electronics. 210. 108778–108778. 1 indexed citations
5.
Borga, Matteo, Benoit Bakeroot, Niels Posthuma, et al.. (2023). Role of the GaN-on-Si Epi-Stack on ΔR ON Caused by Back-Gating Stress. IEEE Transactions on Electron Devices. 70(10). 5203–5209. 3 indexed citations
6.
Borga, Matteo, Benoit Bakeroot, Niels Posthuma, et al.. (2022). The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs. IEEE Electron Device Letters. 43(11). 1846–1849. 11 indexed citations
7.
Modolo, Nicola, Carlo De Santi, Matteo Borga, et al.. (2022). Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices. IEEE Transactions on Electron Devices. 69(8). 4432–4437. 4 indexed citations
8.
9.
Tallarico, Andrea Natale, Benoit Bakeroot, Matteo Borga, et al.. (2021). TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs. IEEE Transactions on Electron Devices. 69(2). 507–513. 24 indexed citations
10.
Fiegna, C., Niels Posthuma, Matteo Borga, et al.. (2021). High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs. IEEE Transactions on Electron Devices. 68(11). 5701–5706. 26 indexed citations
11.
You, Shuzhen, Xiangdong Li, Karen Geens, et al.. (2021). GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and V T instability effect. Semiconductor Science and Technology. 36(3). 35008–35008. 1 indexed citations
12.
Li, Xiangdong, Niels Posthuma, Benoit Bakeroot, et al.. (2020). Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics. IEEE Transactions on Power Electronics. 36(5). 4927–4930. 34 indexed citations
13.
Posthuma, Niels, et al.. (2020). Impact of Structural and Process Variations on the Time-Dependent OFF-State Breakdown of p-GaN Power HEMTs. IEEE Transactions on Device and Materials Reliability. 21(1). 57–63. 7 indexed citations
14.
Bakeroot, Benoit, Steve Stoffels, Niels Posthuma, D. Wellekens, & Stefaan Decoutere. (2019). Trading Off between Threshold Voltage and Subthreshold Slope in AlGaN/GaN HEMTs with a p-GaN Gate. Ghent University Academic Bibliography (Ghent University). 419–422. 31 indexed citations
15.
Chvála, Aleš, Juraj Marek, A. Šatka, et al.. (2018). Methodology and More Accurate Electrothermal Model for Fast Simulation of Power HEMTs. 1–8.
16.
Borga, Matteo, Matteo Meneghini, Steve Stoffels, et al.. (2018). Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs. IEEE Transactions on Electron Devices. 65(7). 2765–2770. 45 indexed citations
17.
Borga, Matteo, Matteo Meneghini, Isabella Rossetto, et al.. (2017). Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs. IEEE Transactions on Electron Devices. 64(9). 3616–3621. 43 indexed citations
18.
Pawlak, Bartek, Tom Janssens, Sukhvinder Singh, et al.. (2011). Studies of implanted boron emitters for solar cell applications. Progress in Photovoltaics Research and Applications. 20(1). 106–110. 22 indexed citations
19.
Leonov, Vladimir, Refet Fırat Yazıcıoğlu, Tom Torfs, et al.. (2008). Wearable Battery-free Wireless 2-channel EEG Systems Powered by Energy Scavengers. SHILAP Revista de lepidopterología. 25 indexed citations
20.
Posthuma, Niels, Giovanni Flamand, & Jef Poortmans. (2003). Development of stand-alone germanium solar cells for application in space using spin-on diffusants. 3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of. 1. 777–780. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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