L. Pantisano

4.0k total citations
149 papers, 3.2k citations indexed

About

L. Pantisano is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, L. Pantisano has authored 149 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 149 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 14 papers in Materials Chemistry. Recurrent topics in L. Pantisano's work include Semiconductor materials and devices (141 papers), Advancements in Semiconductor Devices and Circuit Design (107 papers) and Integrated Circuits and Semiconductor Failure Analysis (70 papers). L. Pantisano is often cited by papers focused on Semiconductor materials and devices (141 papers), Advancements in Semiconductor Devices and Circuit Design (107 papers) and Integrated Circuits and Semiconductor Failure Analysis (70 papers). L. Pantisano collaborates with scholars based in Belgium, United States and Italy. L. Pantisano's co-authors include G. Groeseneken, R. Degraeve, A. Kerber, E. Cartier, Stefan De Gendt, Marc Heyns, T. Schram, H.E. Maes, Udo Schwalke and T. Kauerauf and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L. Pantisano

141 papers receiving 3.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Pantisano Belgium 31 3.1k 621 243 193 114 149 3.2k
S. Dueñas Spain 19 1.3k 0.4× 498 0.8× 305 1.3× 135 0.7× 57 0.5× 146 1.4k
M. Porti Spain 25 2.2k 0.7× 800 1.3× 447 1.8× 99 0.5× 191 1.7× 114 2.4k
R. Jammy United States 23 1.8k 0.6× 622 1.0× 240 1.0× 168 0.9× 303 2.7× 122 2.0k
Helena Castán Spain 18 1.2k 0.4× 474 0.8× 236 1.0× 125 0.6× 51 0.4× 143 1.3k
S. Hall United Kingdom 19 1.1k 0.4× 400 0.6× 195 0.8× 100 0.5× 74 0.6× 112 1.2k
Sufi Zafar United States 29 2.5k 0.8× 936 1.5× 315 1.3× 224 1.2× 374 3.3× 68 2.8k
G. Reimbold France 22 2.1k 0.7× 326 0.5× 275 1.1× 185 1.0× 258 2.3× 214 2.2k
Karl Opsomer Belgium 25 2.1k 0.7× 928 1.5× 537 2.2× 109 0.6× 181 1.6× 104 2.3k
T. W. Hickmott United States 15 1.4k 0.4× 724 1.2× 210 0.9× 179 0.9× 91 0.8× 27 1.5k
Markus Andreas Schubert Germany 22 1.0k 0.3× 902 1.5× 464 1.9× 273 1.4× 460 4.0× 107 1.7k

Countries citing papers authored by L. Pantisano

Since Specialization
Citations

This map shows the geographic impact of L. Pantisano's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Pantisano with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Pantisano more than expected).

Fields of papers citing papers by L. Pantisano

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Pantisano. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Pantisano. The network helps show where L. Pantisano may publish in the future.

Co-authorship network of co-authors of L. Pantisano

This figure shows the co-authorship network connecting the top 25 collaborators of L. Pantisano. A scholar is included among the top collaborators of L. Pantisano based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Pantisano. L. Pantisano is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Razavieh, Ali, et al.. (2020). FinFET with Contact over Active-Gate for 5G Ultra-Wideband Applications. 1–2. 11 indexed citations
2.
Goux, L., L. Pantisano, Johan Swerts, et al.. (2013). Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode. Microelectronic Engineering. 112. 92–96. 8 indexed citations
3.
Goux, L., W. Polspoel, J. G. Lisoni, et al.. (2010). Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni. Journal of The Electrochemical Society. 157(8). G187–G187. 12 indexed citations
4.
Goux, L., P. Czarnecki, L. Pantisano, et al.. (2010). Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells. Applied Physics Letters. 97(24). 197 indexed citations
5.
Li, Zhe, T. Schram, L. Pantisano, et al.. (2007). Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates. Microelectronic Engineering. 84(9-10). 2213–2216. 1 indexed citations
6.
Zahid, M. B., R. Degraeve, L. Pantisano, J. F. Zhang, & G. Groeseneken. (2007). DEFECTS GENERATION IN SIO 2 /HFO 2 STUDIED WITH VARIABLE T CHARGE - TDISCHARGE CHARGE PUMPING (VT 2 CP).. 7 indexed citations
7.
Andrés, E. San, L. Pantisano, Philippe Roussel, et al.. (2007). High-k Characterization by RFCV. ECS Transactions. 11(4). 363–376.
8.
Pantisano, L., T. Schram, Marc Heyns, et al.. (2006). Improving workfunction control of metal gate electrodes. Solid State Technology. 49(9). 45–46. 7 indexed citations
9.
Mitard, Jérôme, Michel Houssa, Geert Eneman, et al.. (2006). Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. Symposium on VLSI Technology. 82–83. 35 indexed citations
10.
Schreurs, Dominique, L. Pantisano, & B. Kaczer. (2006). Analysing impact of mosfet oxide breakdown by small- and large-signal HF measurements. 85–91. 4 indexed citations
11.
Houssa, Michel, L. Pantisano, L.-Å. Ragnarsson, et al.. (2006). Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions. Materials Science and Engineering R Reports. 51(4-6). 37–85. 227 indexed citations
12.
Pantisano, L., et al.. (2005). Valence-band electron-tunneling measurement of the gate work function: Application to the high-κ/polycrystalline-silicon interface. Journal of Applied Physics. 98(5). 14 indexed citations
13.
Kerber, A., L.-Å. Ragnarsson, M. Rosmeulen, et al.. (2004). Direct measurement of the inversion charge in MOSFETs: application to mobility extraction in alternative gate dielectrics. 159–160. 24 indexed citations
14.
Pantisano, L., E. Cartier, A. Kerber, et al.. (2004). Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide. 163–164. 17 indexed citations
15.
Kerber, A., E. Cartier, R. Degraeve, et al.. (2003). Charge Trapping and Dielectric Reliability of SiO2/Al2O3 Gate Stacks with TiN Electrodes. Microelectronic Engineering. 50(5). 1261–1269. 46 indexed citations
16.
Ragnarsson, L.-Å., et al.. (2003). The impact of sub monolayers of HfO2 on the device performance of high-K based transistors. 87–90. 9 indexed citations
17.
Cartier, E., L. Pantisano, A. Kerber, & G. Groeseneken. (2003). Correlation between charge Injection and trapping in SiO2/HfO2 gate stacks. 2 indexed citations
18.
Pantisano, L., A. Paccagnella, G. Cellere, Paolo Colombo, & Matteo Valentini. (2002). Interface state creation due to low-field latent damage depassivation. 77. 93–96. 2 indexed citations
19.
Cellere, G., A. Paccagnella, L. Pantisano, Paolo Colombo, & Matteo Valentini. (2000). Low-field latent plasma damage depassivation in thin-oxide MOS. Microelectronics Reliability. 40(8-10). 1347–1352. 10 indexed citations
20.
Pantisano, L., et al.. (1998). A new experimental technique to evaluate the plasma induced damage at wafer level testing. Microelectronics Reliability. 38(6-8). 919–924. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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