Uthayasankaran Peralagu

461 total citations
50 papers, 284 citations indexed

About

Uthayasankaran Peralagu is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Uthayasankaran Peralagu has authored 50 papers receiving a total of 284 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Condensed Matter Physics, 39 papers in Electrical and Electronic Engineering and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Uthayasankaran Peralagu's work include GaN-based semiconductor devices and materials (42 papers), Semiconductor materials and devices (24 papers) and Radio Frequency Integrated Circuit Design (17 papers). Uthayasankaran Peralagu is often cited by papers focused on GaN-based semiconductor devices and materials (42 papers), Semiconductor materials and devices (24 papers) and Radio Frequency Integrated Circuit Design (17 papers). Uthayasankaran Peralagu collaborates with scholars based in Belgium, United States and Taiwan. Uthayasankaran Peralagu's co-authors include Nadine Collaert, Bertrand Parvais, A. Alian, V. Putcha, Niamh Waldron, Ming Zhao, A. Sibaja-Hernandez, R. Rodríguez, Eddy Simoen and Piet Wambacq and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

Uthayasankaran Peralagu

39 papers receiving 274 citations

Peers

Uthayasankaran Peralagu

CMP

EEE

AMPO

EOMM

A. Mohanbabu India

Martin Fagerlind Sweden

D. Mahaveer Sathaiya Taiwan

Jean-Claude de Jaeger France

Nitin Goyal Norway

Fabio Alessio Marino Italy

Akihisa Terano Japan

Manyam Pilla United States

R. Behtash Germany

M. Oualli France

A. Mohanbabu India

Uthayasankaran Peralagu

257 ×1.1

CMP

248 ×1.1

EEE

95 ×1.1

AMPO

102 ×1.5

EOMM

40 ×1.0

Citations per year, relative to Uthayasankaran Peralagu Uthayasankaran Peralagu (= 1×) peers A. Mohanbabu

Countries citing papers authored by Uthayasankaran Peralagu

Since Specialization

Citations

This map shows the geographic impact of Uthayasankaran Peralagu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Uthayasankaran Peralagu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Uthayasankaran Peralagu more than expected).

Fields of papers citing papers by Uthayasankaran Peralagu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Uthayasankaran Peralagu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Uthayasankaran Peralagu. The network helps show where Uthayasankaran Peralagu may publish in the future.

Co-authorship network of co-authors of Uthayasankaran Peralagu

This figure shows the co-authorship network connecting the top 25 collaborators of Uthayasankaran Peralagu. A scholar is included among the top collaborators of Uthayasankaran Peralagu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Uthayasankaran Peralagu. Uthayasankaran Peralagu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Tsai, Meng‐Che, Hao Yu, Yi Yang, et al.. (2025). Threshold Voltage Bias Temperature Instability of RF MIS-HEMTs and Schottky HEMTs Under Semi-On State Stress. IEEE Transactions on Electron Devices. 72(10). 5359–5365.

Alian, A., A. Sibaja-Hernandez, Hao Yu, et al.. (2025). High Power/PAE (27.8dBm/66%) Emode GaN-on-Si MOSHEMTs for 5V FR3 UE Annlications. 1–3.

Martino, João Antônio, et al.. (2024). Effect of multiple conductions on basic parameters in linear and saturation regions for a MIS-HEMT from 450 K down to 200 K. Journal of Integrated Circuits and Systems. 19(2). 1–5.

Xiao, Dongping, Dominique Schreurs, A. Alian, et al.. (2024). Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques. 73(2). 779–788. 3 indexed citations

O’Sullivan, Barry, A. Alian, A. Sibaja-Hernandez, et al.. (2024). DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. 1–9. 1 indexed citations

Banerjee, Sourish, Uthayasankaran Peralagu, A. Alian, et al.. (2024). Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n⁺ (In)GaN Source/Drain Layers for Radio Frequency Transistors. physica status solidi (a). 221(21). 1 indexed citations

Rack, Martin, Uthayasankaran Peralagu, A. Alian, et al.. (2024). Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity. IEEE Microwave and Wireless Technology Letters. 34(3). 298–301. 1 indexed citations

Yu, Hao, Uthayasankaran Peralagu, A. Alian, et al.. (2024). InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications. 241–244.

Rodríguez, R., A. Sibaja-Hernandez, Uthayasankaran Peralagu, et al.. (2023). RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si. International Journal of Microwave and Wireless Technologies. 15(6). 983–992. 2 indexed citations

10.

Martino, João Antônio, et al.. (2023). MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology. 38(11). 115004–115004. 1 indexed citations

11.

Yu, Hao, Uthayasankaran Peralagu, A. Alian, et al.. (2023). A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. 152–155. 2 indexed citations

12.

Martino, João Antônio, et al.. (2023). Experimental study of MISHEMT from 450 K down to 200 K for analog applications. Solid-State Electronics. 208. 108742–108742.

13.

Yu, Hao, Bjorn Vermeersch, Uthayasankaran Peralagu, et al.. (2023). Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMT. 1–4. 1 indexed citations

14.

Yu, Hao, V. Putcha, Uthayasankaran Peralagu, et al.. (2022). Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures. Journal of Applied Physics. 131(3). 6 indexed citations

15.

Yu, Hao, Bertrand Parvais, Ming Zhao, et al.. (2022). Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures. Applied Physics Letters. 120(21). 5 indexed citations

16.

Wu, Weimin, Ming‐Dou Ker, Shih‐Hung Chen, et al.. (2022). ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs. IEEE Transactions on Electron Devices. 69(4). 2180–2187. 5 indexed citations

17.

Yu, Hao, A. Alian, Uthayasankaran Peralagu, et al.. (2021). Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics. IEEE Transactions on Electron Devices. 68(11). 5559–5564. 12 indexed citations

18.

Rodríguez, R., Uthayasankaran Peralagu, A. Alian, et al.. (2020). Analysis of Gate-Metal Resistance in CMOS-Compatible RF GaN HEMTs. IEEE Transactions on Electron Devices. 67(11). 4592–4596. 5 indexed citations

19.

Takakura, Kenichiro, V. Putcha, Eddy Simoen, et al.. (2020). Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors. Semiconductor Science and Technology. 36(2). 24003–24003. 2 indexed citations

20.

Parvais, Bertrand, A. Alian, Uthayasankaran Peralagu, et al.. (2020). GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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