Y. Higashi

483 total citations
26 papers, 257 citations indexed

About

Y. Higashi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Y. Higashi has authored 26 papers receiving a total of 257 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 3 papers in Materials Chemistry and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Y. Higashi's work include Semiconductor materials and devices (23 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Advanced Memory and Neural Computing (10 papers). Y. Higashi is often cited by papers focused on Semiconductor materials and devices (23 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Advanced Memory and Neural Computing (10 papers). Y. Higashi collaborates with scholars based in Japan, Belgium and United States. Y. Higashi's co-authors include Jan Van Houdt, B. Kaczer, D. Linten, S. R. C. McMitchell, N. Ronchi, Kaustuv Banerjee, Yuichiro Mitani, Luca Piazza, Barry O’Sullivan and Masatoshi Suzuki and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Organic Chemistry.

In The Last Decade

Y. Higashi

23 papers receiving 244 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Higashi Japan 10 246 100 13 8 7 26 257
Xinlv Duan China 12 239 1.0× 77 0.8× 7 0.5× 29 3.6× 9 1.3× 27 247
Zhuoqing Yu China 10 294 1.2× 78 0.8× 6 0.5× 20 2.5× 6 0.9× 18 342
B. Rice France 4 321 1.3× 124 1.2× 11 0.8× 13 1.6× 2 0.3× 4 324
Aniket Gupta India 11 296 1.2× 69 0.7× 12 0.9× 31 3.9× 4 0.6× 26 310
Gihun Choe United States 12 323 1.3× 141 1.4× 9 0.7× 25 3.1× 11 1.6× 32 342
T. Melde Germany 8 342 1.4× 192 1.9× 4 0.3× 7 0.9× 4 0.6× 20 354
Simon Thomann Germany 10 314 1.3× 62 0.6× 25 1.9× 11 1.4× 5 0.7× 37 324
Om Prakash India 11 412 1.7× 100 1.0× 18 1.4× 17 2.1× 4 0.6× 37 437
P. Fonteneau France 11 254 1.0× 30 0.3× 5 0.4× 18 2.3× 12 1.7× 22 262
Chetan Kumar Dabhi India 10 297 1.2× 34 0.3× 15 1.2× 19 2.4× 3 0.4× 34 325

Countries citing papers authored by Y. Higashi

Since Specialization
Citations

This map shows the geographic impact of Y. Higashi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Higashi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Higashi more than expected).

Fields of papers citing papers by Y. Higashi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Higashi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Higashi. The network helps show where Y. Higashi may publish in the future.

Co-authorship network of co-authors of Y. Higashi

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Higashi. A scholar is included among the top collaborators of Y. Higashi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Higashi. Y. Higashi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Higashi, Y., João P. A. Bastos, L. Breuil, et al.. (2024). Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. 1–6. 1 indexed citations
2.
Higashi, Y., et al.. (2024). Synthetic Utilization of 2H-Heptafluoropropane: Ionic 1,4-Addition to Electron-Deficient Carbon–Carbon Unsaturated Bonds. The Journal of Organic Chemistry. 89(6). 3962–3969. 2 indexed citations
3.
4.
5.
Higashi, Y., B. Kaczer, M. Popovici, et al.. (2022). Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 6 indexed citations
6.
7.
O’Sullivan, Barry, V. Putcha, V. V. Afanas’ev, et al.. (2020). Defect profiling in FEFET Si:HfO2 layers. Applied Physics Letters. 117(20). 25 indexed citations
8.
Higashi, Y., B. Kaczer, Anne S. Verhulst, et al.. (2020). Investigation of Imprint in FE-HfO₂ and Its Recovery. IEEE Transactions on Electron Devices. 67(11). 4911–4917. 35 indexed citations
9.
Higashi, Y., Luca Piazza, Masato Suzuki, et al.. (2019). Impact of Charge trapping on Imprint and its Recovery in HfO 2 based FeFET. IEEE Conference Proceedings. 2019. 1–15. 12 indexed citations
10.
Higashi, Y., N. Ronchi, B. Kaczer, et al.. (2019). Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET. 15.6.1–15.6.4. 34 indexed citations
11.
Mitani, Yuichiro, Y. Higashi, & Yasushi Nakasaki. (2018). Study on mechanism of thermal curing in ultra-thin gate dielectrics. 97. 3A.4–1. 3 indexed citations
12.
Tanamoto, Tetsufumi, Y. Higashi, & Jun Deguchi. (2018). Calculation of a capacitively-coupled floating gate array toward quantum annealing machine. Journal of Applied Physics. 124(15). 3 indexed citations
13.
Higashi, Y., Koichi Kato, Masamichi Suzuki, et al.. (2017). Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectronics Reliability. 70. 12–21. 11 indexed citations
14.
Marukame, Takao, Kodai Ueyoshi, Tetsuya Asai, et al.. (2016). Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. IEEE Transactions on Circuits & Systems II Express Briefs. 64(4). 462–466. 13 indexed citations
15.
Higashi, Y., et al.. (2015). Comprehensive studies on the accuracy of trap characterization by using advanced random telegraph noise simulator. Japanese Journal of Applied Physics. 54(4S). 04DC14–04DC14. 4 indexed citations
16.
Higashi, Y., et al.. (2014). Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model. IEEE Transactions on Electron Devices. 61(12). 4197–4203. 11 indexed citations
17.
Higashi, Y., et al.. (2013). Experimental study of channel doping concentration impacts on random telegraph signal noise and successful noise suppression by strain induced mobility enhancement. Symposium on VLSI Technology. 8 indexed citations
18.
Ohguro, T., Y. Higashi, K. Okano, S. Inaba, & Y. Toyoshima. (2012). The optimum device parameters for high RF and analog/MS performance in planar MOSFET and FinFET. 149–150. 9 indexed citations
19.
Higashi, Y., et al.. (2011). Comprehensive Understanding of Random Telegraph Noise with Physics Based Simulation. IEICE Technical Report; IEICE Tech. Rep.. 111(281). 17–20. 4 indexed citations
20.
Higashi, Y., Masato Oda, K. Matsuzawa, et al.. (2009). 90nm node RF CMOS technology with latch-up immunity on high-resistivity substrate. 65–68. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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