Kin P. Cheung

3.4k total citations
188 papers, 2.5k citations indexed

About

Kin P. Cheung is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Kin P. Cheung has authored 188 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 177 papers in Electrical and Electronic Engineering, 32 papers in Materials Chemistry and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Kin P. Cheung's work include Semiconductor materials and devices (154 papers), Advancements in Semiconductor Devices and Circuit Design (101 papers) and Integrated Circuits and Semiconductor Failure Analysis (65 papers). Kin P. Cheung is often cited by papers focused on Semiconductor materials and devices (154 papers), Advancements in Semiconductor Devices and Circuit Design (101 papers) and Integrated Circuits and Semiconductor Failure Analysis (65 papers). Kin P. Cheung collaborates with scholars based in United States, Taiwan and Egypt. Kin P. Cheung's co-authors include J. P. Campbell, John S. Suehle, Pragya R. Shrestha, Kuang Sheng, Chang Chen, Jason T. Ryan, A. S. Oates, Kevin Matocha, C. S. Pai and Mengwei Si and has published in prestigious journals such as Journal of Clinical Oncology, SHILAP Revista de lepidopterología and ACS Nano.

In The Last Decade

Kin P. Cheung

176 papers receiving 2.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Kin P. Cheung United States 24 2.3k 412 218 192 165 188 2.5k
Shunta Harada Japan 24 1.1k 0.5× 539 1.3× 149 0.7× 277 1.4× 226 1.4× 129 1.7k
Shichang Zou China 23 1.6k 0.7× 349 0.8× 209 1.0× 146 0.8× 530 3.2× 174 1.9k
Hiroyuki Miyazoe United States 19 752 0.3× 560 1.4× 221 1.0× 86 0.4× 117 0.7× 55 1.0k
J. Provine United States 25 1.4k 0.6× 514 1.2× 535 2.5× 93 0.5× 591 3.6× 91 1.8k
W. Steinhögl Germany 11 1.1k 0.5× 813 2.0× 286 1.3× 528 2.8× 412 2.5× 26 1.6k
Deirdre L. Olynick United States 25 1.3k 0.5× 894 2.2× 1.0k 4.7× 188 1.0× 394 2.4× 78 2.2k
Félix Palumbo Argentina 17 1.2k 0.5× 377 0.9× 102 0.5× 91 0.5× 136 0.8× 92 1.4k
Kerry Maize United States 17 884 0.4× 737 1.8× 335 1.5× 99 0.5× 156 0.9× 47 1.4k
A. Zenkevich Russia 24 1.6k 0.7× 1.3k 3.0× 135 0.6× 370 1.9× 262 1.6× 97 2.0k
K. Chan United States 23 2.2k 1.0× 1.1k 2.7× 567 2.6× 68 0.4× 575 3.5× 91 2.7k

Countries citing papers authored by Kin P. Cheung

Since Specialization
Citations

This map shows the geographic impact of Kin P. Cheung's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kin P. Cheung with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kin P. Cheung more than expected).

Fields of papers citing papers by Kin P. Cheung

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kin P. Cheung. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kin P. Cheung. The network helps show where Kin P. Cheung may publish in the future.

Co-authorship network of co-authors of Kin P. Cheung

This figure shows the co-authorship network connecting the top 25 collaborators of Kin P. Cheung. A scholar is included among the top collaborators of Kin P. Cheung based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kin P. Cheung. Kin P. Cheung is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tsui, Bing‐Yue, et al.. (2025). Impact of near interface defects on NO annealed SiC MOSFET mobility. Microelectronics Reliability. 173. 115841–115841. 1 indexed citations
2.
Moser, Neil, Kyle J. Liddy, Andrew J. Green, et al.. (2023). Measurement and gate-voltage dependence of channel and series resistances in lateral depletion-mode β-Ga2O3 MOSFETs. Semiconductor Science and Technology. 38(7). 75016–75016. 4 indexed citations
3.
Lyu, Xiao, Mengwei Si, Pragya R. Shrestha, Kin P. Cheung, & P. D. Ye. (2021). Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium Oxide. 1–3. 2 indexed citations
4.
Lyu, Xiao, Mengwei Si, Pragya R. Shrestha, et al.. (2020). Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays. 7–8. 14 indexed citations
5.
Anders, Mark, Jason T. Ryan, Pragya R. Shrestha, et al.. (2019). Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station. Review of Scientific Instruments. 90(1). 14708–14708. 9 indexed citations
6.
Anders, Mark, Jason T. Ryan, Pragya R. Shrestha, et al.. (2018). Wafer-Level Electrically Detected Magnetic Resonance: Magnetic Resonance in a Probing Station. IEEE Transactions on Device and Materials Reliability. 18(2). 139–143. 9 indexed citations
7.
Veksler, Dmitry, Pragya R. Shrestha, J. P. Campbell, et al.. (2017). Impact of RRAM Read Fluctuations on the Program-Verify Approach. IEEE Electron Device Letters. 38(6). 736–739. 18 indexed citations
8.
Sunday, Christopher E., Dmitry Veksler, Kin P. Cheung, & Yaw S. Obeng. (2017). Microwave evaluation of electromigration susceptibility in advanced interconnects. Journal of Applied Physics. 122(17). 1 indexed citations
9.
Liu, Changze, J. P. Campbell, Jason T. Ryan, et al.. (2016). Observation of strong reflection of electron waves exiting a ballistic channel at low energy. AIP Advances. 6(6). 2 indexed citations
10.
Chbili, Z., et al.. (2016). Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors. Materials science forum. 858. 615–618. 28 indexed citations
11.
12.
Fronheiser, Jody, et al.. (2012). Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs. Materials science forum. 717-720. 793–796. 7 indexed citations
13.
Campbell, J. P., Kin P. Cheung, John S. Suehle, & A. S. Oates. (2011). A Simple Series Resistance Extraction Methodology for Advanced CMOS Devices. IEEE Electron Device Letters. 32(8). 1047–1049. 72 indexed citations
14.
Dhar, Sarit, et al.. (2010). Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics. 108(5). 99 indexed citations
15.
Campbell, J. P., Kin P. Cheung, John S. Suehle, & A. S. Oates. (2009). The negative bias temperature instability vs. high-field stress paradigm. 79–82. 1 indexed citations
16.
Cheung, Kin P., V. Tilak, Greg Dunne, et al.. (2009). A fast, simple wafer-level Hall-mobility measurement technique. 73–76. 3 indexed citations
17.
Wang, Yu U., et al.. (2007). Error and Correction in Capacitance–Voltage Measurement Due to the Presence of Source and Drain. IEEE Electron Device Letters. 28(7). 640–642. 2 indexed citations
18.
Cheung, Kin P., et al.. (2002). Is surface potential measurement (SPM) a useful charging damage measurement method?. 18–21. 3 indexed citations
19.
Cheung, Kin P., et al.. (2002). Quantitative yield and reliability projection from antenna test results-a case study. 96–97. 11 indexed citations
20.
Baumann, F.H., A. Ghetti, H.-H. Vuong, et al.. (1999). Severe thickness variation of sub-3 nm gate oxide due to Si surface faceting, poly-Si intrusion, and corner stress. 75–76. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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