F. M. Bufler

1.0k total citations
67 papers, 682 citations indexed

About

F. M. Bufler is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, F. M. Bufler has authored 67 papers receiving a total of 682 indexed citations (citations by other indexed papers that have themselves been cited), including 65 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in F. M. Bufler's work include Advancements in Semiconductor Devices and Circuit Design (62 papers), Semiconductor materials and devices (57 papers) and Silicon Carbide Semiconductor Technologies (21 papers). F. M. Bufler is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (62 papers), Semiconductor materials and devices (57 papers) and Silicon Carbide Semiconductor Technologies (21 papers). F. M. Bufler collaborates with scholars based in Switzerland, Germany and Belgium. F. M. Bufler's co-authors include Wolf Fïchtner, B. Meinerzhagen, Andreas Schenk, Peter Gräf, Geert Eneman, Lee Smith, Naoto Horiguchi, A. Mocuta, R. Ritzenthaler and Hans Mertens and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Sensors.

In The Last Decade

F. M. Bufler

65 papers receiving 656 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. M. Bufler Switzerland 16 642 111 95 44 12 67 682
Andy Stricker United States 13 741 1.2× 164 1.5× 73 0.8× 25 0.6× 42 3.5× 23 772
F.-J. Tegude Germany 10 347 0.5× 177 1.6× 114 1.2× 48 1.1× 8 0.7× 33 383
K.E. Ismail United States 7 679 1.1× 167 1.5× 92 1.0× 59 1.3× 6 0.5× 9 717
Dieter Knoll Germany 15 537 0.8× 143 1.3× 55 0.6× 31 0.7× 39 3.3× 38 548
Shih-Hsien Lo United States 9 759 1.2× 128 1.2× 99 1.0× 49 1.1× 8 0.7× 13 782
T. Ido Japan 14 668 1.0× 358 3.2× 78 0.8× 76 1.7× 13 1.1× 57 693
Thomas A. DeMassa United States 11 393 0.6× 67 0.6× 69 0.7× 32 0.7× 9 0.8× 44 413
E. Sangiorgi Italy 16 826 1.3× 97 0.9× 54 0.6× 137 3.1× 5 0.4× 61 859
Eiji Yoshida Japan 12 383 0.6× 93 0.8× 74 0.8× 108 2.5× 13 1.1× 34 458
A. Awny Germany 15 599 0.9× 91 0.8× 101 1.1× 7 0.2× 20 1.7× 39 612

Countries citing papers authored by F. M. Bufler

Since Specialization
Citations

This map shows the geographic impact of F. M. Bufler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. M. Bufler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. M. Bufler more than expected).

Fields of papers citing papers by F. M. Bufler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. M. Bufler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. M. Bufler. The network helps show where F. M. Bufler may publish in the future.

Co-authorship network of co-authors of F. M. Bufler

This figure shows the co-authorship network connecting the top 25 collaborators of F. M. Bufler. A scholar is included among the top collaborators of F. M. Bufler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. M. Bufler. F. M. Bufler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vermeersch, Bjorn, Halil Kükner, Gioele Mirabelli, et al.. (2024). Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5). 1–2. 2 indexed citations
2.
Vermeersch, Bjorn, Halil Kükner, Arvind Sharma, et al.. (2024). Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-Simulation. Lirias (KU Leuven). 1–6. 1 indexed citations
3.
Bufler, F. M., Paola Favia, Geert Eneman, et al.. (2022). Monte Carlo Analysis of -Type SiGe-Channel Nanosheet Performance . IEEE Transactions on Electron Devices. 69(11). 6384–6387. 1 indexed citations
4.
Schuddinck, P., F. M. Bufler, Yang Xiang, et al.. (2022). PPAC of sheet-based CFET configurations for 4 track design with 16nm metal pitch. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 365–366. 31 indexed citations
5.
Jang, Doyoung, T. Chiarella, F. M. Bufler, et al.. (2021). Experimental Validation of Process-Induced Variability Aware SPICE Simulation Platform for Sub-20 nm FinFET Technologies. IEEE Transactions on Electron Devices. 68(3). 976–980. 6 indexed citations
6.
Mohiyaddin, Fahd A., A. Spessot, B. Govoreanu, et al.. (2019). Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices. IEEE Conference Proceedings. 2019. 1–39. 3 indexed citations
7.
Miyaguchi, Kenichi, F. M. Bufler, T. Chiarella, et al.. (2017). Single and Double Diffusion Breaks in 14nm FinFET and Beyond. 9 indexed citations
8.
Bufler, F. M., Geert Eneman, Nadine Collaert, & A. Mocuta. (2017). Monte Carlo benchmark of Ino.53Gao.47As-and Silicon-FinFETs. 62. 13.3.1–13.3.4. 3 indexed citations
9.
Bufler, F. M., Frederik Ole Heinz, & Lee Smith. (2013). Efficient 3D Monte Carlo simulation of orientation and stress effects in FinFETs. 172–175. 7 indexed citations
10.
11.
12.
Bufler, F. M., et al.. (2008). Simulation of <110> nMOSFETs with a Tensile Strained Cap Layer. ECS Transactions. 16(10). 91–100. 8 indexed citations
13.
Bufler, F. M., et al.. (2007). Threshold energy and impact ionization scattering rate calculations for strained silicon. Journal of Computational Electronics. 6(1-3). 23–26. 2 indexed citations
14.
Bufler, F. M. & Andreas Schenk. (2005). On the Tunneling Energy within the Full-Band Structure Approach. E86-C. 155–158. 3 indexed citations
15.
Bufler, F. M., Christoph Zechner, Andreas Schenk, & Wolfgang Fichtner. (2003). Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation. IEICE Transactions on Electronics. 308–313. 10 indexed citations
16.
Bufler, F. M. & Wolf Fïchtner. (2003). Scaling of strained-si n-MOSFETs into the ballistic regime and associated anisotropic effects. IEEE Transactions on Electron Devices. 50(2). 278–284. 23 indexed citations
17.
Bufler, F. M., Andreas Schenk, & Wolf Fïchtner. (2003). Proof of a simple time-step propagation scheme for Monte Carlo simulation. Mathematics and Computers in Simulation. 62(3-6). 323–326. 6 indexed citations
18.
Bufler, F. M., Peter Gräf, B. Meinerzhagen, Gerhard G. Fischer, & H. Kibbel. (1998). Hole transport investigation in unstrained and strained SiGe. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1667–1669. 6 indexed citations
19.
Bufler, F. M., et al.. (1997). Full Band Monte-Carlo Device Simulation of an 0.1 um N-Channel MOSFET in Strained Silicon Material. European Solid-State Device Research Conference. 200–203. 11 indexed citations
20.
Jungemann, Christoph, et al.. (1996). Effects of band structure and phonon models on hot electron transport in silicon. Electrical Engineering. 79(2). 99–101. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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