J. Geypen

954 total citations
12 papers, 102 citations indexed

About

J. Geypen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, J. Geypen has authored 12 papers receiving a total of 102 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 1 paper in Computational Mechanics. Recurrent topics in J. Geypen's work include Silicon and Solar Cell Technologies (6 papers), Semiconductor materials and devices (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). J. Geypen is often cited by papers focused on Silicon and Solar Cell Technologies (6 papers), Semiconductor materials and devices (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). J. Geypen collaborates with scholars based in Belgium, United States and South Korea. J. Geypen's co-authors include H. Bender, Roger Loo, Eddy Simoen, Andrea Firrincieli, Wilfried Vandervorst, Marc Meuris, Matty Caymax, Erik Rosseel, Bert Brijs and Laurent Souriau and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Materials Science.

In The Last Decade

J. Geypen

10 papers receiving 100 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Geypen Belgium	6	99	40	20	13	5	12	102
Woo-Bin Song United States	6	67 0.7×	53 1.3×	34 1.7×	18 1.4×	3 0.6×	11	101
Dzmitry O. Dzibrou Netherlands	5	60 0.6×	29 0.7×	9 0.5×	30 2.3×	9 1.8×	8	74
A. Opdebeeck Belgium	4	119 1.2×	21 0.5×	26 1.3×	33 2.5×	6 1.2×	4	130
C. Zincke United States	4	103 1.0×	25 0.6×	64 3.2×	11 0.8×	3 0.6×	8	110
H.J. Tao Taiwan	9	199 2.0×	30 0.8×	18 0.9×	28 2.2×	2 0.4×	20	206
F. Lau Germany	6	183 1.8×	49 1.2×	11 0.6×	27 2.1×	3 0.6×	13	199
M. Bawedin France	9	221 2.2×	32 0.8×	27 1.4×	18 1.4×	3 0.6×	35	228
Prasanna Khare United States	5	76 0.8×	23 0.6×	15 0.8×	16 1.2×	14 2.8×	8	102
R.J.P. Lander Belgium	11	300 3.0×	55 1.4×	43 2.1×	16 1.2×	5 1.0×	24	312
D. Lacey United States	8	278 2.8×	30 0.8×	37 1.9×	21 1.6×	6 1.2×	14	282

Countries citing papers authored by J. Geypen

Since Specialization

Citations

This map shows the geographic impact of J. Geypen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Geypen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Geypen more than expected).

Fields of papers citing papers by J. Geypen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Geypen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Geypen. The network helps show where J. Geypen may publish in the future.

Co-authorship network of co-authors of J. Geypen

This figure shows the co-authorship network connecting the top 25 collaborators of J. Geypen. A scholar is included among the top collaborators of J. Geypen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Geypen. J. Geypen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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12 of 12 papers shown

Rosseel, Erik, Clément Porret, Roger Loo, et al.. (2024). Source/Drain Epitaxy for Nanosheet-Based CFET Devices. ECS Transactions. 114(2). 29–36. 2 indexed citations

Rosseel, Erik, Clément Porret, Roger Loo, et al.. (2024). Source/Drain Epitaxy for Nanosheet-Based CFET Devices. ECS Meeting Abstracts. MA2024-02(32). 2298–2298.

Ritzenthaler, R., Pierre Eyben, Kiroubanand Sankaran, et al.. (2024). Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor. 1–4.

Subhechha, Subhali, Nouredine Rassoul, Hubert Hody, et al.. (2022). Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. 88–88. 1 indexed citations

Zhang, Liping, J. Geypen, Johan Meersschaut, et al.. (2014). Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films. Microelectronic Engineering. 137. 70–74. 6 indexed citations

Firrincieli, Andrea, Koen Martens, R. Rooyackers, et al.. (2011). Study of ohmic contacts to n-type Ge: Snowplow and laser activation. Applied Physics Letters. 99(24). 29 indexed citations

Bender, H., et al.. (2010). Structural characterization of through silicon vias. Journal of Materials Science. 47(18). 6497–6504. 6 indexed citations

Hikavyy, Andriy, Roger Loo, Liesbeth Witters, et al.. (2009). SiGe SEG Growth for Buried Channels p-MOS Devices. ECS Transactions. 25(7). 201–210. 17 indexed citations

Simoen, Eddy, A. Satta, Andrea Firrincieli, et al.. (2009). Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium. Journal of Applied Physics. 105(9). 11 indexed citations

10.

González, Mireia Bargalló, Eddy Simoen, Erik Rosseel, et al.. (2008). Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si1-xGex Source /Drain Junctions. ECS Transactions. 13(1). 23–30. 1 indexed citations

11.

Wang, Gang, Frederik Leys, Laurent Souriau, et al.. (2008). Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates. ECS Transactions. 16(10). 829–836. 27 indexed citations

12.

Rosseel, Erik, J.P. Lu, Andriy Hikavyy, et al.. (2007). Impact of sub-melt laser annealing on Si<inf>1-x</inf>Ge<inf>x</inf> source /drain defectivity. 907. 307–315. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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