A. Asenov

3.3k total citations · 1 hit paper
156 papers, 2.5k citations indexed

About

A. Asenov is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, A. Asenov has authored 156 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 147 papers in Electrical and Electronic Engineering, 28 papers in Atomic and Molecular Physics, and Optics and 14 papers in Biomedical Engineering. Recurrent topics in A. Asenov's work include Semiconductor materials and devices (131 papers), Advancements in Semiconductor Devices and Circuit Design (129 papers) and Integrated Circuits and Semiconductor Failure Analysis (48 papers). A. Asenov is often cited by papers focused on Semiconductor materials and devices (131 papers), Advancements in Semiconductor Devices and Circuit Design (129 papers) and Integrated Circuits and Semiconductor Failure Analysis (48 papers). A. Asenov collaborates with scholars based in United Kingdom, Belgium and United States. A. Asenov's co-authors include A. R. Brown, Gareth Roy, B. Cheng, J.R. Watling, Scott Roy, Stanislav Markov, S. Roy, Andrew R. Brown, Andrew R. Brown and Craig Alexander and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

A. Asenov

146 papers receiving 2.4k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

1998 502 citations A. Asenov IEEE Transactions on Electron Devices profile →

Peers

Countries citing papers authored by A. Asenov

Since Specialization

Citations

This map shows the geographic impact of A. Asenov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Asenov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Asenov more than expected).

Fields of papers citing papers by A. Asenov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Asenov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Asenov. The network helps show where A. Asenov may publish in the future.

Co-authorship network of co-authors of A. Asenov

This figure shows the co-authorship network connecting the top 25 collaborators of A. Asenov. A scholar is included among the top collaborators of A. Asenov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Asenov. A. Asenov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Reliability-Aware Statistical BSIM Compact Model Parameter Generation Methodology 2020 ·IEEE Transactions on Electron Devices ·Jie Ding, A. Asenov	2
2	TCAD simulations and accurate extraction of reliability-aware statistical compact models 2019 ·Journal of Computational Electronics ·Jie Ding, A. Asenov	2
3	A Carrier Lifetime Sensitivity Probe Based on Transient Capacitance: A novel method to Characterize Lifetime in Z2FET 2018 ·Fikru Adamu-Lema, Meng Duan, Vihar Georgiev, A. Asenov	1
4	Key Issues and Solutions for Characterizing Hot Carrier Aging of Nanometer Scale nMOSFETs 2017 ·IEEE Transactions on Electron Devices ·Meng Duan, J. F. Zhang, Zhigang Ji, Wei Dong Zhang, B. Kaczer, A. Asenov	19
5	Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric 2011 ·IEEE Electron Device Letters ·(unknown), M. Holland, Xu Li, Gary W. Paterson, Haiping Zhou, (unknown), D.S. Macintyre, S. Thoms, A. Asenov, Byungha Shin, Jaesoo Ahn, Paul C. McIntyre, Iain Thayne	34
6	A general approach for multivariate statistical MOSFET compact modeling preserving correlations 2011 ·Fraunhofer-Publica (Fraunhofer-Gesellschaft) ·(unknown), (unknown), (unknown), Joachim Haase, B. Cheng, (unknown), A. Asenov	8
7	Integrating drift diffusion and Brownian simulations for sensory applications 2010 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·I. D. Moore, C. Millar, S. Roy, A. Asenov	1
8	2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS 2010 ·International Symposium on Circuits and Systems ·Tong Boon Tang, Alan Murray, B. Cheng, A. Asenov	31
9	Capturing intrinsic parameter fluctuations using the PSP compact model 2010 ·Design, Automation, and Test in Europe ·B. Cheng, Daryoosh Dideban, (unknown), C. Millar, (unknown), Xingsheng Wang, S. Roy, A. Asenov	1
10	Simulation of hole-mobility in doped relaxed and strained Ge 2010 ·Microelectronic Engineering ·J.R. Watling, Craig Riddet, (unknown), A. Asenov	1
11	RC Variability of Short-Range Interconnects 2009 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·(unknown), David R. S. Cumming, S. Roy, A. Asenov, Timothy D. Drysdale	7
12	Simulating the bio–nanoelectronic interface 2007 ·Journal of Physics Condensed Matter ·Campbell Millar, Scott Roy, A. R. Brown, A. Asenov	3
13	High Mobility III-V MOSFETs For RF and Digital Applications 2007 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·M. Passlack, (unknown), (unknown), Richard J. Hill, David A. J. Moran, X. Li, Haiping Zhou, Donald J. MacIntyre, S. Thoms, A. Asenov, K. Kálna, P. Zürcher, (unknown), K. Rajagopalan, Ravi Droopad, J. Abrokwah, M. Tutt, (unknown), Erik Johnson, (unknown)	45
14	Statistical Device Variability and its Impact on Yield and Performance 2007 ·A. Asenov	1
15	Impact Of Intrinsic Parameter Fluctuations On Deca-nanometer Circuits, And Circuit Modelling Techniques 2006 ·B. Cheng, S. Roy, A. Asenov	3
16	The impact of random dopant effects on SRAM cells 2004 ·ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) ·B. Cheng, (unknown), A. Asenov	1
17	Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs 2003 ·IEICE Transactions on Electronics ·K. Kálna, A. Asenov	2
18	Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs( the IEEE International Conference on SISPAD '02) 2003 ·IEICE Transactions on Electronics ·K. Kálna, A. Asenov	1
19	Excessive Over-Relaxation Method for Multigrid Poisson Solvers 2002 ·Journal of Computational Electronics ·C. Millar, A. Asenov, J.R. Watling	6
20	RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study 1997 ·European Solid-State Device Research Conference ·S. Roy, A. Asenov, (unknown), John R. Barker, S. P. Beaumont	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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