Dmitry Yakimets

1.9k citations

34 papers · 1.2k indexed · h-index 21

Impact in

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Advanced Memory and Neural Computing
Biomedical Engineering top 10%
- Nanowire Synthesis and Applications

Papers in

Electrical and Electronic Engineering 33
- Advancements in Semiconductor Devices and Circuit Design 31
- Semiconductor materials and devices 31
- Ferroelectric and Negative Capacitance Devices 17
- Integrated Circuits and Semiconductor Failure Analysis 6
- Low-power high-performance VLSI design 5
- Silicon and Solar Cell Technologies 1
- Radio Frequency Integrated Circuit Design 1
Biomedical Engineering 6
- Nanowire Synthesis and Applications 6

Co-authors: Diederik Verkest P. Schuddinck M. Garcia Bardon Doyoung Jang A. Mocuta Geert Eneman A. Spessot Praveen Raghavan
Journals: IEEE Transactions on Electron Devices (8 papers)IEEE Journal of the Electron Devices Society (2 papers)IEEE Electron Device Letters (1 paper)Journal of Physics Condensed Matter (1 paper)VUBIR (Vrije Universiteit Brussel) (3 papers)
Partner nations: Belgium United States Austria

In The Last Decade

Dmitry Yakimets

34 papers receiving 1.1k citations

Peers

Countries citing papers authored by Dmitry Yakimets

Since Specialization

Citations

This map shows the geographic impact of Dmitry Yakimets's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dmitry Yakimets with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dmitry Yakimets more than expected).

Fields of papers citing papers by Dmitry Yakimets

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dmitry Yakimets. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dmitry Yakimets. The network helps show where Dmitry Yakimets may publish in the future.

Co-authors

The 25 scholars most cited alongside Dmitry Yakimets, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Dmitry Yakimets Line = papers co-authored together Dmitry Yakimets links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Exploring GAA-Nanosheet, Forksheet and GAA–Forksheet Architectures: A TCAD-DTCO Study at 90 nm and 120-nm Cell Height IEEE Journal of the Electron Devices Society ·Sérgio Luiz Francisco, P. Schuddinck, Krishna K. Bhuwalka, G. Rzepa, Gioele Mirabelli, Anshul Gupta, Juergen Boemmels, Philippe Matagne, Dmitry Yakimets, Angélica Mendes, Šárka Honová, Geert Hellings, K Navrátil	2024	1
2	DTCO of Nanosheet and Forksheet Architectures: Exploring Dielectric Walls, Contacting Schemes, and Active Regions for Optimized RO Performance Sérgio Luiz Francisco, P. Schuddinck, Krishna K. Bhuwalka, G. Rzepa, Gioele Mirabelli, Philippe Matagne, Dmitry Yakimets, Hao Wu, Geert Hellings, Ali Zare Mehrjardi	2024	3
3	Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters IEEE Transactions on Electron Devices ·Dmitry Yakimets, Krishna K. Bhuwalka, Angélica Mendes, G. Rzepa, M. Karner, K Navrátil	2024	4
4	Device-, Circuit- & Block-level evaluation of CFET in a 4 track library P. Schuddinck, Odysseas Zografos, Pieter Weckx, Prachand Man Pradhan, Santonu Sarkar, Yasser Sherazi, Rogier Baert, Doyoung Jang, Dmitry Yakimets, Anshul Gupta, Bertrand Parvais, Julien Ryckaert, Diederik Verkest, A. Mocuta	2019	53
5	Process-Induced Power-Performance Variability in Sub-5-nm III–V Tunnel FETs IEEE Transactions on Electron Devices ·Yang Xiang, Anne S. Verhulst, Dmitry Yakimets, Bertrand Parvais, A. Mocuta, G. Groeseneken	2019	2
6	Junctionless versus inversion-mode lateral semiconductor nanowire transistors Journal of Physics Condensed Matter ·A. Veloso, Philippe Matagne, Eddy Simoen, B. Kaczer, Geert Eneman, Hans Mertens, Dmitry Yakimets, Bertrand Parvais, D. Mocuta	2018	27
7	Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors` IEEE Journal of the Electron Devices Society ·Devin Verreck, Anne S. Verhulst, Yang Xiang, Dmitry Yakimets, Salim El Kazzi, Bertrand Parvais, G. Groeseneken, Nadine Collaert, A. Mocuta	2018	4
8	Enablement of STT-MRAM as last level cache for the high performance computing domain at the 5nm node Antoine Ginésy, Manu Perumkunnil, Trong Huynh-Bao, Siddharth Rao, W. Kim, D. Crotti, Faisal Mohd-Yasin, Sébastien Couet, Johan Swerts, Shreya Kundu, Dmitry Yakimets, Rogier Baert, Preera Srisomerang, A. Spessot, A. Mocuta, Gouri Sankar Kar, A. Furnémont	2018	45
9	Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm Pieter Weckx, Julien Ryckaert, V. Putcha, A. De Keersgieter, Juergen Boemmels, P. Schuddinck, Doyoung Jang, Dmitry Yakimets, M. Garcia Bardon, L.-Å. Ragnarsson, Prasanth Raghavan, Maks Vinšćak, A. Spessot, Diederik Verkest, A. Mocuta	2017	39
10	Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node IEEE Transactions on Electron Devices ·Doyoung Jang, Dmitry Yakimets, Geert Eneman, P. Schuddinck, M. Garcia Bardon, Praveen Raghavan, A. Spessot, Diederik Verkest, A. Mocuta	2017	208
11	Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology Dmitry Yakimets, M. Garcia Bardon, Doyoung Jang, P. Schuddinck, Yasser Sherazi, Pieter Weckx, Kenichi Miyaguchi, Bertrand Parvais, Prasanth Raghavan, A. Spessot, Diederik Verkest, A. Mocuta	2017	84
12	The impact of sequential-3D integration on semiconductor scaling roadmap VUBIR (Vrije Universiteit Brussel) ·A. Mallik, A. Vandooren, Liesbeth Witters, A. Walke, J. Franco, Yasser Sherazi, Pieter Weckx, Dmitry Yakimets, M. Garcia Bardon, Bertrand Parvais, Peter Debacker, Karen Huseby-Moore, Sung Kyu Lim, A. Mocuta, D. Mocuta, Julien Ryckaert, Nadine Collaert, Prasanth Raghavan	2017	35
13	Insights and Opportunities for Junctionless Gate-All-Around Lateral and Vertical Nanowire FETs A. Veloso, Philippe Matagne, Eddy Simoen, Adrian Chasin, B. Kaczer, Dmitry Yakimets, D. Mocuta, Nadine Collaert	2017	2
14	Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7 Lirias (KU Leuven) ·Mohit Gupta, Pieter Weckx, Stefan Cosemans, P. Schuddinck, Rogier Baert, Dmitry Yakimets, Doyoung Jang, Yasser Sherazi, Praveen Raghavan, A. Spessot, A. Mocuta, Wim Dehaene	2017	6
15	Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires M. Garcia Bardon, Yasser Sherazi, P. Schuddinck, Doyoung Jang, Dmitry Yakimets, Peter Debacker, Rogier Baert, Hans Mertens, Mustafa Badaroglu, A. Mocuta, Naoto Horiguchi, D. Mocuta, Prasanth Raghavan, Julien Ryckaert, A. Spessot, Diederik Verkest, An Steegen	2016	53
16	Vertical devices for future nano-electronic applications Nadine Collaert, A. Veloso, Trong Huynh-Bao, Dmitry Yakimets, Ts. Ivanov, Juhi Bhayani, Prachand Man Pradhan, A. Sibaja-Hernandez, Muhammad Agung Trimono, Clément Merckling, Niamh Waldron, Aaron Thean	2016	1
17	Vertical device architecture for 5nm and beyond: Device & circuit implications A. V-Y. Thean, Dmitry Yakimets, Trong Huynh-Bao, P. Schuddinck, Antoine Ginésy, M. Garcia Bardon, A. Sibaja-Hernandez, Ivan Ciofi, Geert Eneman, A. Veloso, Julien Ryckaert, Prasanth Raghavan, A. Mercha, A. Mocuta, Zs. Tôkei, Diederik Verkest, Piet Wambacq, K. De Meyer, Nadine Collaert	2015	40
18	Benchmarking of MoS₂FETs With Multigate Si-FET Options for 5 nm and Beyond IEEE Transactions on Electron Devices ·Tarun Agarwal, Dmitry Yakimets, Praveen Raghavan, Iuliana Radu, Aaron Thean, Marc Heyns, Wim Dehaene	2015	28
19	Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies VUBIR (Vrije Universiteit Brussel) ·Trong Huynh-Bao, Dmitry Yakimets, Julien Ryckaert, Ivan Ciofi, Rogier Baert, A. Veloso, Juergen Boemmels, Nadine Collaert, Ph. Roussel, S. Demuynck, Prasanth Raghavan, A. Mercha, Zs. Tôkei, Diederik Verkest, A. V-Y. Thean, Piet Wambacq	2014	33
20	STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process Doyoung Jang, M. Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, A. De Keersgieter, T. Chiarella, R. Ritzenthaler, M. Dehan, A. Mercha	2013	3

About Dmitry Yakimets

Dmitry Yakimets is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Infectious Diseases, Organic Chemistry and Surgery, having authored 34 papers that have together received 1.2k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (31 papers), Semiconductor materials and devices (31 papers), Ferroelectric and Negative Capacitance Devices (17 papers), Nanowire Synthesis and Applications (6 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Low-power high-performance VLSI design (5 papers), Silicon and Solar Cell Technologies (1 paper) and Radio Frequency Integrated Circuit Design (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Biomedical Engineering (304 citations), Hardware and Architecture (46 citations), Atomic and Molecular Physics, and Optics (86 citations) and Materials Chemistry (122 citations). Dmitry Yakimets has collaborated with scholars based in Belgium, United States and Austria. Frequent co-authors include Diederik Verkest, P. Schuddinck, M. Garcia Bardon, Doyoung Jang, A. Mocuta, Geert Eneman, A. Spessot, Praveen Raghavan, Aaron Thean and A. Mercha. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Journal of the Electron Devices Society, IEEE Electron Device Letters, Journal of Physics Condensed Matter and VUBIR (Vrije Universiteit Brussel).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact