A. Stesmans

13.8k total citations · 1 hit paper
443 papers, 11.2k citations indexed

About

A. Stesmans is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Stesmans has authored 443 papers receiving a total of 11.2k indexed citations (citations by other indexed papers that have themselves been cited), including 355 papers in Electrical and Electronic Engineering, 250 papers in Materials Chemistry and 145 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Stesmans's work include Semiconductor materials and devices (272 papers), Semiconductor materials and interfaces (93 papers) and Silicon Nanostructures and Photoluminescence (87 papers). A. Stesmans is often cited by papers focused on Semiconductor materials and devices (272 papers), Semiconductor materials and interfaces (93 papers) and Silicon Nanostructures and Photoluminescence (87 papers). A. Stesmans collaborates with scholars based in Belgium, United States and Germany. A. Stesmans's co-authors include V. V. Afanas’ev, Michel Houssa, Geoffrey Pourtois, Emilio Scalise, V. V. Afanas’ev, M. M. Heyns, G. Van Gorp, Gerhard Pensl, K. Vanheusden and M. Jivanescu and has published in prestigious journals such as Physical Review Letters, Advanced Materials and The Journal of Chemical Physics.

In The Last Decade

A. Stesmans

434 papers receiving 10.9k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

2011 578 citations Emilio Scalise, Michel Houssa et al. profile →

Peers

Countries citing papers authored by A. Stesmans

Since Specialization

Citations

This map shows the geographic impact of A. Stesmans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Stesmans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Stesmans more than expected).

Fields of papers citing papers by A. Stesmans

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Stesmans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Stesmans. The network helps show where A. Stesmans may publish in the future.

Co-authorship network of co-authors of A. Stesmans

This figure shows the co-authorship network connecting the top 25 collaborators of A. Stesmans. A scholar is included among the top collaborators of A. Stesmans based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Stesmans. A. Stesmans is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra 2021 ·Journal of Applied Physics ·(unknown), Konstantin Iakoubovskii, (unknown), Abhinav Gaur, Dennis Lin, Inge Asselberghs, Iuliana Radu, J. W. Chai, Ming Yang, Shijie Wang, Michel Houssa, A. Stesmans, V. V. Afanas’ev	8
2	Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures 2021 ·Journal of Physics D Applied Physics ·(unknown), (unknown), (unknown), Inge Asselberghs, Cedric Huyghebaert, Iuliana Radu, (unknown), Ming Yang, Shijie Wang, Ageeth A. Bol, Konstantin Iakoubovskii, Michel Houssa, A. Stesmans, V. V. Afanas’ev	2
3	A Deep Level Transient Spectroscopy Study of Hole Traps in Ge _x Se _1−x -based Layers for Ovonic Threshold Switching Selectors 2020 ·ECS Journal of Solid State Science and Technology ·Po-Chun Hsu, Eddy Simoen, Dennis Lin, A. Stesmans, L. Goux, Romain Delhougne, Patrick Carolan, H. Bender, Gouri Sankar Kar	1
4	Impact of MoS ₂ layer transfer on electrostatics of MoS ₂ /SiO ₂ interface 2018 ·Nanotechnology ·V. V. Afanas’ev, Daniele Chiappe, (unknown), Michel Houssa, Cedric Huyghebaert, Iuliana Radu, A. Stesmans	13
5	The lead acceptor in p-type natural 2H-polytype MoS₂ crystals evidenced by electron paramagnetic resonance 2017 ·Journal of Physics Condensed Matter ·Serena Iacovo, A. Stesmans, Michel Houssa, V. V. Afanas’ev	10
6	Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization 2017 ·Nanoscale Research Letters ·A. Stesmans, Serena Iacovo, Daniele Chiappe, Iuliana Radu, Cedric Huyghebaert, Stefan De Gendt, V. V. Afanas’ev	12
7	Impact of point defects on the electronic and transport properties of silicene nanoribbons 2016 ·Journal of Physics Condensed Matter ·Konstantina Iordanidou, Michel Houssa, Bas van den Broek, Geoffrey Pourtois, V. V. Afanas’ev, A. Stesmans	32
8	First-principles material modeling of solid-state electrolytes with the spinel structure 2014 ·Physical Chemistry Chemical Physics ·Maarten Mees, Geoffrey Pourtois, Fabio Rosciano, Brecht Put, Philippe M. Vereecken, A. Stesmans	13
9	An electric field tunable energy band gap at silicene/(0001) ZnS interfaces 2013 ·Physical Chemistry Chemical Physics ·Michel Houssa, Bas van den Broek, Emilio Scalise, Geoffrey Pourtois, V. V. Afanas’ev, A. Stesmans	82
10	Electron spin resonance investigation of ultra-small double walled carbon nanotubes embedded in zeolite nanochannels 2011 ·Journal of Physics Condensed Matter ·S. S. Rao, A. Stesmans, Jasper Van Noyen, Peter A. Jacobs, Bert F. Sels	9
11	Barrier Characterization at Interfaces of High-Mobility Semiconductors with Oxide Insulators 2009 ·ECS Transactions ·Valeri Afanas’ev, A. Stesmans	2
12	P-associated defects in high-k insulators HfO2 and ZrO2 revealed by electron spin resonance 2008 ·Physical Review B ·A. Stesmans, K. Clémer, Valeri Afanas’ev	6
13	Applied Physics Review: Internal photoemission at interfaces of high-k insulators with semiconductors and metals 2007 ·Journal of Applied Physics ·Valeri Afanas’ev, A. Stesmans	29
14	Electron spin resonance analysis of Si nanocrystals embedded in a SiO2 matrix 2007 ·Journal of Optoelectronics and Advanced Materials ·M. Jivanescu, A. Stesmans, (unknown), Margit Zacharias	2
15	Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI 2006 ·Symposium on VLSI Technology ·Jérôme Mitard, (unknown), (unknown), (unknown), (unknown), Michel Houssa, Geert Eneman, Geert Hellings, (unknown), Jason Lin, Frederik Leys, Roger Loo, Gillis Winderickx, Evi Vrancken, A. Stesmans, (unknown), Matty Caymax, L. Pantisano, Marc Meuris, Marc Heyns	35
16	Experimental study of the density of states in the band gap of a-Se 2005 ·Journal of Optoelectronics and Advanced Materials ·(unknown), M.S. Aïda, Naser Qamhieh, A. Stesmans, G.J. Adriaenssens	10
17	Gap states in chalcogenide glasses 2002 ·Journal of Optoelectronics and Advanced Materials ·G.J. Adriaenssens, A. Stesmans	8
18	Positive charging of thermal SiO2 layers: hole trapping versus proton trapping 2001 ·Microelectronic Engineering ·V. V. Afanas’ev, G.J. Adriaenssens, A. Stesmans	13
19	Undetectability of the P-b1 point defect as an interface state in thermal (100)Si/SiO2 1998 ·Journal of Physics Condensed Matter ·A. Stesmans, Valeri Afanas’ev	3
20	Si-29 hyperfine structure of the P-b1 interface defect in thermal (100)Si/SiO2 1998 ·Journal of Physics Condensed Matter ·A. Stesmans, (unknown), Valeri Afanas’ev	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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