Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies
if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the
same subfield and year (this is the minimum needed to enter the top 1%, not the average
within it), or reaches the top citation threshold in at least one of its specific research
topics.
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2
2011578 citationsEmilio Scalise, Michel Houssa et al.profile →
Author Peers
Peers are selected by citation overlap in the author's most active subfields.
citations ·
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This map shows the geographic impact of A. Stesmans's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Stesmans with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Stesmans more than expected).
This network shows the impact of papers produced by A. Stesmans. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Stesmans. The network helps show where A. Stesmans may publish in the future.
Co-authorship network of co-authors of A. Stesmans
This figure shows the co-authorship network connecting the top 25 collaborators of A. Stesmans.
A scholar is included among the top collaborators of A. Stesmans based on the total number of
citations received by their joint publications. Widths of edges
represent the number of papers authors have co-authored together.
Node borders
signify the number of papers an author published with A. Stesmans. A. Stesmans is excluded from
the visualization to improve readability, since they are connected to all nodes in the network.
Stesmans, A., K. Clémer, & Valeri Afanas’ev. (2008). P-associated defects in high-k insulators HfO2 and ZrO2 revealed by electron spin resonance. Physical Review B. 77(12). 1–12.6 indexed citations
12.
Afanas’ev, Valeri & A. Stesmans. (2007). Applied Physics Review: Internal photoemission at interfaces of high-k insulators with semiconductors and metals. Journal of Applied Physics. 102(8). 1–28.29 indexed citations
13.
Jivanescu, M., et al.. (2007). Electron spin resonance analysis of Si nanocrystals embedded in a SiO2 matrix. Journal of Optoelectronics and Advanced Materials. 9(3). 721–724.2 indexed citations
14.
Mitard, Jérôme, Michel Houssa, Geert Eneman, et al.. (2006). Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. Symposium on VLSI Technology. 82–83.35 indexed citations
15.
Aïda, M.S., et al.. (2005). Experimental study of the density of states in the band gap of a-Se. Journal of Optoelectronics and Advanced Materials. 7(1). 329–332.10 indexed citations
16.
Adriaenssens, G.J. & A. Stesmans. (2002). Gap states in chalcogenide glasses. Journal of Optoelectronics and Advanced Materials. 4(4). 837–842.8 indexed citations
17.
Stesmans, A. & Valeri Afanas’ev. (1998). Undetectability of the P-b1 point defect as an interface state in thermal (100)Si/SiO2. Journal of Physics Condensed Matter. 10(1).3 indexed citations
18.
Stesmans, A., et al.. (1998). Si-29 hyperfine structure of the P-b1 interface defect in thermal (100)Si/SiO2. Journal of Physics Condensed Matter. 10(27).1 indexed citations
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive
bibliographic database. While OpenAlex provides broad and valuable coverage of the global
research landscape, it—like all bibliographic datasets—has inherent limitations. These include
incomplete records, variations in author disambiguation, differences in journal indexing, and
delays in data updates. As a result, some metrics and network relationships displayed in
Rankless may not fully capture the entirety of a scholar's output or impact.