Karl Opsomer

3.5k citations

104 papers · 2.3k indexed · h-index 25

Impact in

Electrical and Electronic Engineering top 2%
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
Polymers and Plastics top 5%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 101
- Semiconductor materials and devices 56
- Advanced Memory and Neural Computing 33
- Ferroelectric and Negative Capacitance Devices 23
- Silicon and Solar Cell Technologies 13
Surfaces, Coatings and Films 9

Co-authors: Christophe Detavernier M. Jurczak Ludovic Goux Wilfried Vandervorst Attilio Belmonte Wouter Devulder Umberto Celano J. A. Kittl
Journals: Microelectronic Engineering (9 papers)Applied Physics Letters (7 papers)Journal of The Electrochemical Society (5 papers)Journal of Materials Chemistry C (5 papers)IEEE Electron Device Letters (4 papers)
Partner nations: Belgium Germany United States

In The Last Decade

Karl Opsomer

100 papers receiving 2.2k citations

Peers

Countries citing papers authored by Karl Opsomer

Since Specialization

Citations

This map shows the geographic impact of Karl Opsomer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Karl Opsomer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Karl Opsomer more than expected).

Fields of papers citing papers by Karl Opsomer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Karl Opsomer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Karl Opsomer. The network helps show where Karl Opsomer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Karl Opsomer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Karl Opsomer Line = papers co-authored together Karl Opsomer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Study of SiGeAsTe and SiGeAsSe chalcogenide thin films by Raman spectroscopy and understanding of their OTS properties Journal of Non-Crystalline Solids ·Tatsuro Takemoto, Wouter Devulder, Stefanie Sergeant, Thomas Nuytten, Johan Meersschaut, Karl Opsomer, Christophe Detavernier	2024	0
2	Al3Sc thin films for advanced interconnect applications Microelectronic Engineering ·Jean-Philippe Soulié, Kiroubanand Sankaran, Piers Da, Karl Opsomer, Christophe Detavernier, Joris Van de Vondel, Geoffrey Pourtois, Zsolt Tökei, Johan Swerts, Christoph Adelmann	2024	7
3	Properties of ultrathin molybdenum films for interconnect applications Materialia ·Piers Da, Jean-Philippe Soulié, Kiroubanand Sankaran, Kris Vanstreels, Karl Opsomer, P. Morin, Pieter Lagrain, Alexis Franquet, Danielle Vanhaeren, Thierry Conard, Johan Meersschaut, Christophe Detavernier, Joris Van de Vondel, Ingrid De Wolf, Geoffrey Pourtois, Zsolt Tökei, Johan Swerts, Christoph Adelmann	2022	36
4	Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask Micro and Nano Engineering ·Marlene Wylie, Jean‐François de Marneffe, Karl Opsomer, Christophe Detavernier, Annelies Delabie, Т. В. Марусей, Isabela Maria Probst, Andy Goodyear, Mike Cooke, Morin Ge, Victor Soltwisch, Frank Scholze, Vicky Philipsen	2021	10
5	Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements Journal of Applied Physics ·Tatsuro Takemoto, Karl Opsomer, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar, Christophe Detavernier	2021	11
6	Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe₂ Journal of Materials Chemistry C ·Tatsuro Takemoto, Karl Opsomer, Thomas Nuytten, Stefanie Sergeant, Wouter Devulder, Sergiu Clima, Ludovic Goux, Gouri Sankar Kar, Christophe Detavernier	2020	11
7	Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance Ghent University Academic Bibliography (Ghent University) ·Daniele Garbin, Wouter Devulder, R. Degraeve, Gabriele Luca Donadio, Sergiu Clima, Karl Opsomer, A. Fantini, S.A. Casson, Jiating Huang, Mahendra Pakala, J. Kim, Christophe Detavernier, Romain Delhougne, L. Goux, Gouri Sankar Kar	2019	43
8	Material relaxation in chalcogenide OTS SELECTOR materials Microelectronic Engineering ·Sergiu Clima, Daniele Garbin, Wouter Devulder, Tatsuro Takemoto, Karl Opsomer, L. Goux, Gouri Sankar Kar, Geoffrey Pourtois	2019	19
9	Doped GeSe materials for selector applications Yi-Lin Jan, B. Govoreanu, Karl Opsomer, Wouter Devulder, Sergiu Clima, Christophe Detavernier, Mara Cistina Pessoa da Cruz, Jan Van Houdt, 宜志川村, L. Goux, Gouri Sankar Kar	2017	24
10	Te-based chalcogenide materials for selector applications Scientific Reports ·Alin Velea, Karl Opsomer, Wouter Devulder, Jasmien Dumortier, Jiandong Fan, Christophe Detavernier, M. Jurczak, B. Govoreanu	2017	130
11	Tuning the switching behavior of conductive-bridge resistive memory by the modulation of the cation-supplier alloys Microelectronic Engineering ·Umberto Celano, Nadia Putri Randio, Ludovic Goux, Karl Opsomer, Wouter Devulder, Felice Crupi, Christophe Detavernier, M. Jurczak, Wilfried Vandervorst	2016	4
12	Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices Nanoscale ·Umberto Celano, Ludovic Goux, Karl Opsomer, Attilio Belmonte, Erika Erika, Christophe Detavernier, M. Jurczak, Wilfried Vandervorst	2013	28
13	Modulation of electron barriers between TiN_x and oxide insulators (SiO₂, Al₂O₃) using Ti interlayer physica status solidi (a) ·Francesca De Stefano, Valeri Afanas’ev, Michel Houssa, Ludovic Goux, Karl Opsomer, M. Jurczak, A. Stesmans	2013	3
14	Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential Symposium on VLSI Technology ·Małgorzata Pawlak, B. Kaczer, D Dobrott, Minsoo Kim, M. Popovici, Johan Swerts, Kazuyuki Tomida, Karl Opsomer, Marc Schaekers, C. Vrancken, B. Govoreanu, Attilio Belmonte, C. Demeurisse, I. Debusschere, L. Altimime, V. V. Afanas’ev, J. A. Kittl	2011	4
15	Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors Applied Physics Letters ·Małgorzata Pawlak, B. Kaczer, Amy Galloway, M. Popovici, Johan Swerts, Emanuel Marcel Braga Costa, Karl Opsomer, Paola Favia, Kazuyuki Tomida, Attilio Belmonte, B. Govoreanu, C. Vrancken, C. Demeurisse, H. Bender, V. V. Afanas’ev, I. Debusschere, L. Altimime, J. A. Kittl	2011	24
16	Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell L. Goux, Karl Opsomer, Urgen Letschnik, R. Degraeve, Ralph Müller, Christophe Detavernier, Dirk J. Wouters, M. Jurczak, L. Altimime, J. A. Kittl	2011	8
17	Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4] Journal of The Electrochemical Society ·M. Popovici, Sven Van Elshocht, N. Menou, Johan Swerts, Dieter Pierreux, Annelies Delabie, Bert Brijs, Thierry Conard, Karl Opsomer, Jan Willem Maes, Dirk J. Wouters, J. A. Kittl	2009	55
18	Germanium: The Past and Possibly a Future Material for Microelectronics ECS Transactions ·D.P. Brunco, Brice De Jaeger, Geert Eneman, A. Satta, V. Terzieva, Laurent Souriau, Frederik Leys, Geoffrey Pourtois, Michel Houssa, Karl Opsomer, G. Nicholas, Marc Meuris, Marc Heyns	2007	31
19	A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium Materials Science in Semiconductor Processing ·Karl Opsomer, Simone Cuiabano, C. Claeys, Karen Maex, Christophe Detavernier, R.L. Van Meirhaeghe, Stefaan Forment, P. Clauws	2006	10
20	High performance Ge pMOS devices using a Si-compatible process flow Paul Zimmerman, G. Nicholas, Brice De Jaeger, B. Kaczer, A. Stesmans, Caroli Halmii, D.P. Brunco, Frederik Leys, Matty Caymax, Gillis Winderickx, Karl Opsomer, Marc Meuris, Marc Heyns	2006	86

About Karl Opsomer

Karl Opsomer is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Materials Chemistry and Polymers and Plastics, having authored 104 papers that have together received 2.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (56 papers), Semiconductor materials and interfaces (34 papers), Advanced Memory and Neural Computing (33 papers), Ferroelectric and Negative Capacitance Devices (23 papers), Phase-change materials and chalcogenides (15 papers), Electronic and Structural Properties of Oxides (15 papers), Silicon and Solar Cell Technologies (13 papers) and Transition Metal Oxide Nanomaterials (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.1k citations), Polymers and Plastics (323 citations), Materials Chemistry (928 citations), Atomic and Molecular Physics, and Optics (537 citations) and Cellular and Molecular Neuroscience (258 citations). Karl Opsomer has collaborated with scholars based in Belgium, Germany and United States. Frequent co-authors include Christophe Detavernier, M. Jurczak, Ludovic Goux, Wilfried Vandervorst, Attilio Belmonte, Wouter Devulder, Umberto Celano, J. A. Kittl, H. Bender and Olivier Richard. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, Journal of The Electrochemical Society, Journal of Materials Chemistry C and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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