C. Demeurisse

771 citations

37 papers · 527 indexed · h-index 13

Co-authors: A. Lauwers C. Vrancken J. A. Kittl Karl Opsomer M.J.H. van Dal Małgorzata Pawlak Karen Maex P. Absil
Topics: Semiconductor materials and interfaces (29 papers)Semiconductor materials and devices (23 papers)Silicon and Solar Cell Technologies (16 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Applied Physics Letters Journal of Applied Physics IEEE Electron Device Letters
Partner nations: Belgium United States Germany

In The Last Decade

C. Demeurisse

36 papers receiving 506 citations

Peers

Countries citing papers authored by C. Demeurisse

Since Specialization

Citations

This map shows the geographic impact of C. Demeurisse's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Demeurisse with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Demeurisse more than expected).

Fields of papers citing papers by C. Demeurisse

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Demeurisse. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Demeurisse. The network helps show where C. Demeurisse may publish in the future.

Co-authorship network of co-authors of C. Demeurisse

This figure shows the co-authorship network connecting the top 25 collaborators of C. Demeurisse. A scholar is included among the top collaborators of C. Demeurisse based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Demeurisse. C. Demeurisse is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Challenges and solutions on pre-assembly processes for thinned 3D wafers with micro-bumps on the backside 2014 ·(unknown),C. Demeurisse,(unknown),Kenneth June Rebibis,(unknown),(unknown),Alain Phommahaxay,Erik Sleeckx,Herbert Struyf,(unknown),Gerald Beyer,Eric Beyne	4
2	Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential 2011 ·Symposium on VLSI Technology ·Małgorzata Pawlak,B. Kaczer,(unknown),Minsoo Kim,M. Popovici,Johan Swerts,Kazuyuki Tomida,Karl Opsomer,Marc Schaekers,C. Vrancken,B. Govoreanu,Attilio Belmonte,C. Demeurisse,I. Debusschere,L. Altimime,V. V. Afanas’ev,J. A. Kittl	4
3	Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors 2011 ·Applied Physics Letters ·Małgorzata Pawlak,B. Kaczer,(unknown),M. Popovici,Johan Swerts,(unknown),Karl Opsomer,Paola Favia,Kazuyuki Tomida,Attilio Belmonte,B. Govoreanu,C. Vrancken,C. Demeurisse,H. Bender,V. V. Afanas’ev,I. Debusschere,L. Altimime,J. A. Kittl	24
4	Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering 2010 ·Małgorzata Pawlak,M. Popovici,Johan Swerts,Kazuyuki Tomida,Minsoo Kim,B. Kaczer,Karl Opsomer,Marc Schaekers,Paola Favia,H. Bender,C. Vrancken,B. Govoreanu,C. Demeurisse,(unknown),V. V. Afanas’ev,I. Debusschere,L. Altimime,J. A. Kittl	5
5	Silicides and germanides for nano-CMOS applications 2008 ·Materials Science and Engineering B ·J. A. Kittl,Karl Opsomer,C. Torregiani,C. Demeurisse,S. Mertens,D.P. Brunco,M.J.H. van Dal,A. Lauwers	54
6	Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications 2007 ·Applied Physics Letters ·J. A. Kittl,B. J. O’Sullivan,V. Kaushik,A. Lauwers,Małgorzata Pawlak,Thomas Hoffmann,C. Demeurisse,C. Vrancken,A. Veloso,P. Absil,S. Biesemans	8
7	Post Salicidation Clean: Selective Removal of Un-Reacted NiPt Towards NiPtSi(Ge) 2007 ·ECS Transactions ·(unknown),A. Lauwers,Rita Vos,(unknown),(unknown),C. Demeurisse,S. Mertens,(unknown),(unknown),P. Mertens,(unknown),(unknown),(unknown)	0
8	Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25nm Ni fully silicided gates 2007 ·Applied Physics Letters ·J. A. Kittl,A. Lauwers,C. Demeurisse,C. Vrancken,Stefan Kubicek,P. Absil,S. Biesemans	6
9	Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain 2007 ·Microelectronic Engineering ·C. Demeurisse,Peter Verheyen,Karl Opsomer,C. Vrancken,P. Absil,A. Lauwers	16
10	Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications 2007 ·Applied Physics Letters ·J. A. Kittl,Małgorzata Pawlak,C. Torregiani,A. Lauwers,C. Demeurisse,C. Vrancken,P. Absil,S. Biesemans,(unknown),Christophe Detavernier,Jean Jordan‐Sweet,C. Lavoie	7
11	CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON 2006 ·IEEE Electron Device Letters ·J. A. Kittl,A. Lauwers,A. Veloso,Thomas Hoffmann,Stefan Kubicek,M. Niwa,M.J.H. van Dal,Małgorzata Pawlak,S. Brus,C. Demeurisse,C. Vrancken,P. Absil,S. Biesemans	14
12	Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies 2006 ·ECS Transactions ·J. A. Kittl,A. Lauwers,Mark van Dal,Hongyu Yu,A. Veloso,(unknown),Małgorzata Pawlak,C. Demeurisse,Stefan Kubicek,M. Niwa,C. Vrancken,(unknown),S. Biesemans	1
13	Study of silicide contacts to SiGe source/drain 2006 ·Microelectronic Engineering ·A. Lauwers,M.J.H. van Dal,Peter Verheyen,O. Chamirian,C. Demeurisse,S. Mertens,C. Vrancken,(unknown),(unknown),J. A. Kittl	7
14	Phase effects and short gate length device implementation of Ni fully silicided (FUSI) gates 2006 ·Microelectronic Engineering ·J. A. Kittl,Małgorzata Pawlak,A. Lauwers,C. Demeurisse,Thomas Hoffmann,A. Veloso,K.G. Anil,Stefan Kubicek,M. Niwa,M.J.H. van Dal,Olivier Richard,M. Jurczak,C. Vrancken,T. Chiarella,S. Brus,Karen Maex,S. Biesemans	4
15	Study of Ni-Silicide Contacts to Si:C Source/Drain. 2006 ·ECS Transactions ·S. Mertens,(unknown),(unknown),R. Schreutelkamp,Yihwan Kim,Peter Verheyen,(unknown),C. Vrancken,H. Bender,Olivier Richard,Benny Van Daele,Wilfried Vandervorst,(unknown),Stefan Kubicek,C. Demeurisse,Zsolt Tökei,A. Lauwers,(unknown)	10
16	P implantation on doping of Ge: diffusion, activation, re-crystallization 2005 ·A. Satta,Tom Janssens,Trudo Clarysse,Eddy Simoen,M. Meuris,A. Benedetti,I. Hoflijk,Brice De Jaeger,C. Demeurisse,Wilfried Vandervorst	2
17	Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface 2005 ·Applied Physics Letters ·Ray Duffy,V. C. Venezia,Roger Loo,M. Hopstaken,Marcel A. Verheijen,J. G. M. van Berkum,(unknown),Y. Tamminga,(unknown),C. Demeurisse	29
18	Low temperature spike anneal for Ni-silicide formation 2004 ·Microelectronic Engineering ·A. Lauwers,J. A. Kittl,Mark van Dal,O. Chamirian,Richard Lindsay,M. de Potter,C. Demeurisse,C. Vrancken,Karen Maex,Xavier Llimona i Pagès,(unknown),Victor P. Kuznetsov,E.H.A. Granneman	16
19	Effects of Alloying on Properties of NiSi for CMOS Applications 2004 ·MRS Proceedings ·Mark van Dal,A. Akheyar,J. A. Kittl,O. Chamirian,(unknown),C. Demeurisse,A. Lauwers,Karen Maex	2
20	Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide 2002 ·Microelectronic Engineering ·A. Lauwers,M. de Potter,O. Chamirian,Richard Lindsay,C. Demeurisse,C. Vrancken,Karen Maex	47

About C. Demeurisse

C. Demeurisse is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Automotive Engineering, having authored 37 papers that have together received 527 indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (29 papers), Semiconductor materials and devices (23 papers) and Silicon and Solar Cell Technologies (16 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (346 citations), Electrical and Electronic Engineering (472 citations) and Materials Chemistry (139 citations). C. Demeurisse has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include A. Lauwers, C. Vrancken, J. A. Kittl, Karl Opsomer, M.J.H. van Dal, Małgorzata Pawlak, Karen Maex, P. Absil, A. Veloso and S. Biesemans. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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