S. Baudot

416 total citations
24 papers, 160 citations indexed

About

S. Baudot is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Baudot has authored 24 papers receiving a total of 160 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Baudot's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). S. Baudot is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). S. Baudot collaborates with scholars based in France, Belgium and United States. S. Baudot's co-authors include J. Eymery, F. Andrieu, F. Rieutord, T. Schram, E. Martínez, F. Martín, O. Renault, Blanka Detlefs, M. Gros‐Jean and N. Rochat and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

S. Baudot

24 papers receiving 156 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Baudot France 8 134 42 35 30 13 24 160
P. Gouraud France 5 115 0.9× 63 1.5× 25 0.7× 29 1.0× 22 1.7× 25 148
N. Loubet United States 8 230 1.7× 65 1.5× 28 0.8× 40 1.3× 5 0.4× 15 249
Gabriel Micard Germany 10 326 2.4× 31 0.7× 105 3.0× 82 2.7× 10 0.8× 40 340
S. Kawazu Japan 8 123 0.9× 11 0.3× 24 0.7× 20 0.7× 21 1.6× 21 143
H. Dansas France 7 277 2.1× 56 1.3× 75 2.1× 50 1.7× 6 0.5× 12 293
Baojun Yan China 8 111 0.8× 48 1.1× 22 0.6× 62 2.1× 16 1.2× 34 153
Thomas Feudel Germany 8 232 1.7× 30 0.7× 52 1.5× 22 0.7× 4 0.3× 28 245
Mark van Dal Belgium 10 256 1.9× 60 1.4× 204 5.8× 56 1.9× 5 0.4× 26 285
C. Bowen United States 6 168 1.3× 44 1.0× 42 1.2× 60 2.0× 2 0.2× 14 211
M.R. Polcari United States 12 459 3.4× 42 1.0× 72 2.1× 16 0.5× 6 0.5× 22 468

Countries citing papers authored by S. Baudot

Since Specialization
Citations

This map shows the geographic impact of S. Baudot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Baudot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Baudot more than expected).

Fields of papers citing papers by S. Baudot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Baudot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Baudot. The network helps show where S. Baudot may publish in the future.

Co-authorship network of co-authors of S. Baudot

This figure shows the co-authorship network connecting the top 25 collaborators of S. Baudot. A scholar is included among the top collaborators of S. Baudot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Baudot. S. Baudot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hiblot, Gaspard, Narendra Parihar, Emmanuel Dupuy, et al.. (2021). Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices. IEEE Transactions on Device and Materials Reliability. 21(2). 192–198. 1 indexed citations
2.
Vincent, Benjamin, M. Kamon, T. Schram, et al.. (2020). Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle. IEEE Transactions on Electron Devices. 67(12). 5374–5380. 11 indexed citations
3.
Arimura, Hiroaki, E. Capogreco, Kurt Wostyn, et al.. (2020). Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-Cap-Free Gate Stack and Optimizing the Channel Strain. 1–2. 5 indexed citations
4.
Porret, Clément, Andriy Hikavyy, S. Baudot, et al.. (2019). Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. ECS Journal of Solid State Science and Technology. 8(8). P392–P399. 17 indexed citations
5.
Sebaai, Farid, Guy Vereecke, XiuMei Xu, et al.. (2018). Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 282. 190–193. 4 indexed citations
6.
Baudot, S., et al.. (2018). N7 FinFET Self-Aligned Quadruple Patterning Modeling. 344–347. 7 indexed citations
7.
Martínez, E., F. Pierre, O. Renault, et al.. (2015). Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering. Applied Surface Science. 335. 71–77. 7 indexed citations
8.
Eymery, J., et al.. (2013). Time-Dependent Relaxation of Strained Silicon-on-Insulator Lines Using a Partially Coherent X-Ray Nanobeam. Physical Review Letters. 111(21). 215502–215502. 10 indexed citations
9.
Pichler, P., et al.. (2013). Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts. Microelectronic Engineering. 109. 200–203. 2 indexed citations
10.
Baudot, S., et al.. (2013). Investigating doping effects on high-κ metal gate stack for effective work function engineering. Solid-State Electronics. 88. 21–26. 11 indexed citations
11.
Panciera, Federico, S. Baudot, K. Hoummada, et al.. (2012). Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold. Applied Physics Letters. 100(20). 12 indexed citations
12.
Baudot, S., N. Rochat, R. Pantel, et al.. (2012). Impact of high temperature annealing on La diffusion and flatband voltage (Vfb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks. Journal of Applied Physics. 111(5). 20 indexed citations
13.
Baudot, S., E. Martínez, O. Renault, et al.. (2011). Flatband Voltage Tuning of HfSiON-Based Gate Stacks: Impact of High Temperature Activation Annealing and LaOx Capping Layers. ECS Transactions. 35(4). 805–813. 1 indexed citations
14.
Baudot, S., C. Leroux, E. Martínez, et al.. (2011). Understanding reversal effects of metallic aluminum introduced in HfSiON/TiN PMOSFETs. Microelectronic Engineering. 88(7). 1305–1308. 6 indexed citations
15.
Andrieu, F., O. Weber, S. Baudot, et al.. (2010). Fully depleted Silicon-On-Insulator with back bias and strain for low power and high performance applications. 18. 59–62. 1 indexed citations
16.
Baudot, S., M. Grégoire, R.A. Bianchi, et al.. (2010). Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs. Microelectronic Engineering. 88(5). 569–572. 1 indexed citations
17.
Royer, C. Le, M. Cassé, F. Andrieu, et al.. (2010). Dual channel and strain for CMOS co-integration in FDSOI device architecture. 206–209. 3 indexed citations
18.
Baudot, S., F. Andrieu, F. Rieutord, & J. Eymery. (2009). Elastic relaxation in patterned and implanted strained silicon on insulator. Journal of Applied Physics. 105(11). 22 indexed citations
19.
20.
Andrieu, F., C. Fenouillet-Béranger, O. Weber, et al.. (2009). Ultrathin Body and BOX SOI and <sub>S</sub>SOI for Low Power Application at the 22nm technology node and below. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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