S. Baudot

416 citations

24 papers · 160 indexed · h-index 8

Impact in

Structural Biology
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices

Papers in ⓘ

Structural Biology 1
Electrical and Electronic Engineering 22
- Semiconductor materials and devices 19
- Advancements in Semiconductor Devices and Circuit Design 17
- Integrated Circuits and Semiconductor Failure Analysis 11
- Ferroelectric and Negative Capacitance Devices 6

Co-authors: J. Eymery (4 shared papers)F. Andrieu (6 shared papers)F. Rieutord (1 shared paper)T. Schram (3 shared papers)F. Martín (4 shared papers)E. Martínez (4 shared papers)N. Rochat (1 shared paper)Dina Carbone (1 shared paper)
Journals: Microelectronic Engineering (3 papers)Journal of Applied Physics (3 papers)ECS Journal of Solid State Science and Technology (1 paper)Applied Surface Science (1 paper)Applied Physics Letters (1 paper)
Partner nations: France Belgium United States

In The Last Decade

S. Baudot

24 papers receiving 156 citations

Peers

Countries citing papers authored by S. Baudot

Since Specialization

Citations

This map shows the geographic impact of S. Baudot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Baudot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Baudot more than expected).

Fields of papers citing papers by S. Baudot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Baudot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Baudot. The network helps show where S. Baudot may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Baudot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Baudot Line = papers co-authored together S. Baudot links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 24 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Elastic relaxation in patterned and implanted strained silicon on insulator Journal of Applied Physics ·S. Baudot, F. Andrieu, F. Rieutord, J. Eymery	2009	22
2	Impact of high temperature annealing on La diffusion and flatband voltage (Vfb) modulation in TiN/LaOx/HfSiON/SiON/Si gate stacks Journal of Applied Physics ·R. Boujamaa, S. Baudot, N. Rochat, R. Pantel, E. Martínez, O. Renault, Blanka Detlefs, J. Zegenhagen, V. Loup, F. Martín, M. Gros‐Jean, F. Bertin, C. Dubourdieu	2012	20
3	Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration ECS Journal of Solid State Science and Technology ·Clément Porret, Andriy Hikavyy, Juan Fernando Gomez Granados, S. Baudot, Anurag Vohra, Bernardette Kunert, Bastien Douhard, Janusz Bogdanowicz, Marc Schaekers, David Kohen, J. Margetis, J. Tolle, Lucas Petersen Barbosa Lima, Amir Sammak, Giordano Scappucci, Erik Rosseel, R. Langer, Roger Loo	2019	17
4	Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold Applied Physics Letters ·Federico Panciera, S. Baudot, K. Hoummada, M. Grégoire, M. Juhel, D. Mangelinck	2012	12
5	Process Variation Analysis of Device Performance Using Virtual Fabrication: Methodology Demonstrated on a CMOS 14-nm FinFET Vehicle IEEE Transactions on Electron Devices ·Benjamin Vincent, Raghu Hathwar, M. Kamon, Joseph Ervin, T. Schram, T. Chiarella, S. Demuynck, S. Baudot, Yong Kong Siew, S. Kubicek, E. Dentoni Litta, Soon-Aik Chew, Jérôme Mitard	2020	11
6	Investigating doping effects on high-κ metal gate stack for effective work function engineering Solid-State Electronics ·C. Leroux, S. Baudot, M. Charbonnier, A. Van Der Geest, P. Caubet, A. Toffoli, Ph. Blaise, G. Ghibaudo, F. Martín, G. Reimbold	2013	11
7	Time-Dependent Relaxation of Strained Silicon-on-Insulator Lines Using a Partially Coherent X-Ray Nanobeam Physical Review Letters ·Francesca Mastropietro, J. Eymery, Dina Carbone, S. Baudot, F. Andrieu, V. Favre‐Nicolin	2013	10
8	Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering Applied Surface Science ·R. Boujamaa, E. Martínez, F. Pierre, O. Renault, Blanka Detlefs, J. Zegenhagen, S. Baudot, M. Gros‐Jean, F. Bertin, C. Dubourdieu	2015	7
9	N7 FinFET Self-Aligned Quadruple Patterning Modeling S. Baudot, S. Guissi, Alexey Milenin, Joseph Ervin, T. Schram	2018	7
10	(Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration ECS Transactions ·Clément Porret, Andriy Hikavyy, Juan Fernando Gomez Granados, S. Baudot, Anurag Vohra, Bernardette Kunert, Bastien Douhard, Janusz Bogdanowicz, Marc Schaekers, David Kohen, Joe Margetis, John Tolle, Lucas Petersen Barbosa Lima, Amir Sammak, Giordano Scappucci, Erik Rosseel, R. Langer, Roger Loo	2018	7
11	Understanding reversal effects of metallic aluminum introduced in HfSiON/TiN PMOSFETs Microelectronic Engineering ·S. Baudot, C. Leroux, F. Chave, R. Boujamaa, E. Martínez, P. Caubet, Mathieu G. Silly, Fausto Sirotti, G. Reimbold, G. Ghibaudo	2011	6
12	Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-DIT Si-Cap-Free Gate Stack and Optimizing the Channel Strain Hiroaki Arimura, E. Capogreco, Kurt Wostyn, Geert Eneman, L.-Å. Ragnarsson, S. Brus, S. Baudot, A. Peter, T. Schram, Paola Favia, Olivier Richard, H. Bender, Jérôme Mitard, Naoto Horiguchi	2020	5
13	Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability Journal of Applied Physics ·X. Garros, F. Rochette, F. Andrieu, S. Baudot, G. Reimbold, C. Aulnette, Nicolas Daval, F. Boulanger	2009	5
14	Cleaning of High Aspect Ratio STI Structures for Advanced Logic Devices by Implementation of a Surface Modification Drying Technique Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Farid Sebaai, Guy Vereecke, XiuMei Xu, S. Baudot, Fumihiro Amemiya, Kana Komori, Frank Holsteyns	2018	4
15	Dual channel and strain for CMOS co-integration in FDSOI device architecture C. Le Royer, M. Cassé, F. Andrieu, O. Weber, L. Brévard, P. Perreau, J.-F. Damlencourt, S. Baudot, C. Tabone, F. Allain, P. Scheiblin, C. Rauer, Louis Hutin, Christophe Figuet, C. Aulnette, Nicolas Daval, Bich-Yen Nguyen, K.K. Bourdelle	2010	3
16	Width and orientation effects in strained FDSOI MOSFETs: strain and device characterization S. Baudot, J. Eymery, F. Andrieu, V. Vidal, F. Allain, L. Brévard, O. Faynot	2009	3
17	Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts Microelectronic Engineering ·M. Hackenberg, P. Pichler, S. Baudot, Z. Essa, M. Gro-Jean, C. Tavernier, Sylvie Schamm‐Chardon	2013	2
18	Ultrathin Body and BOX SOI and <sub>S</sub>SOI for Low Power Application at the 22nm technology node and below F. Andrieu, C. Fenouillet-Béranger, O. Weber, S. Baudot, C. Buj, Jean-Philippe Noël, Olivier Thomas, O. Rozeau, P. Perreau, L. Tosti, L. Brévard, O. Faynot	2009	2
19	Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices IEEE Transactions on Device and Materials Reliability ·Gaspard Hiblot, Narendra Parihar, Emmanuel Dupuy, G. Mannaert, S. Baudot, B. Kaczer, J. Franco, A. Vandooren, V. De Heyn, A. Mercha	2021	1
20	Fully depleted Silicon-On-Insulator with back bias and strain for low power and high performance applications F. Andrieu, O. Weber, S. Baudot, C. Fenouillet-Béranger, O. Rozeau, J. Mazurier, P. Perreau, J. Eymery, O. Faynot	2010	1

About S. Baudot

S. Baudot is a scholar working on Structural Biology, Electrical and Electronic Engineering, Hardware and Architecture, Surfaces, Coatings and Films and Radiation, having authored 24 papers that have together received 160 indexed citations. Recurring topics across this work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Ferroelectric and Negative Capacitance Devices (6 papers), Electronic and Structural Properties of Oxides (3 papers), Semiconductor materials and interfaces (1 paper), Advanced X-ray Imaging Techniques (1 paper) and Ion-surface interactions and analysis (1 paper). The work is most often cited by research in Structural Biology (8 citations), Electrical and Electronic Engineering (134 citations), Surfaces, Coatings and Films (13 citations), Atomic and Molecular Physics, and Optics (35 citations) and Biomedical Engineering (42 citations). S. Baudot has collaborated with scholars based in France, Belgium and United States. Frequent co-authors include J. Eymery, F. Andrieu, F. Rieutord, T. Schram, F. Martín, E. Martínez, N. Rochat, Dina Carbone, J. Zegenhagen and K. Hoummada. Their work appears in journals such as Microelectronic Engineering, Journal of Applied Physics, ECS Journal of Solid State Science and Technology, Applied Surface Science and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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