V. Loup

1.8k total citations
57 papers, 812 citations indexed

About

V. Loup is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, V. Loup has authored 57 papers receiving a total of 812 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 12 papers in Biomedical Engineering. Recurrent topics in V. Loup's work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and interfaces (8 papers). V. Loup is often cited by papers focused on Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers) and Semiconductor materials and interfaces (8 papers). V. Loup collaborates with scholars based in France, Czechia and Belgium. V. Loup's co-authors include Jean‐Michel Hartmann, G. Rolland, M.N. Séméria, P. Holliger, F. Laugier, P. Besson, L. Clavelier, O. Joubert, C. Vannuffel and C. Dubourdieu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

V. Loup

54 papers receiving 790 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Loup France 15 752 228 213 191 41 57 812
Ş. Kalem Türkiye 15 481 0.6× 325 1.4× 289 1.4× 224 1.2× 30 0.7× 50 599
Sylvain David France 15 569 0.8× 284 1.2× 152 0.7× 155 0.8× 44 1.1× 42 633
Oliver Supplie Germany 17 493 0.7× 364 1.6× 172 0.8× 184 1.0× 79 1.9× 44 633
Alban Gassenq France 18 1.0k 1.4× 551 2.4× 293 1.4× 323 1.7× 31 0.8× 64 1.1k
Shigemitsu Maruno Japan 13 404 0.5× 209 0.9× 232 1.1× 110 0.6× 47 1.1× 53 531
E. Wintersberger Austria 13 442 0.6× 418 1.8× 279 1.3× 298 1.6× 25 0.6× 24 694
Kunal Mukherjee United States 17 795 1.1× 611 2.7× 291 1.4× 111 0.6× 39 1.0× 59 1.0k
J. P. Xanthakis Greece 11 260 0.3× 200 0.9× 360 1.7× 129 0.7× 13 0.3× 62 530
Oliver Skibitzki Germany 13 365 0.5× 283 1.2× 264 1.2× 275 1.4× 33 0.8× 52 575
T. Eschrich United States 7 252 0.3× 152 0.7× 170 0.8× 95 0.5× 78 1.9× 13 380

Countries citing papers authored by V. Loup

Since Specialization
Citations

This map shows the geographic impact of V. Loup's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Loup with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Loup more than expected).

Fields of papers citing papers by V. Loup

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Loup. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Loup. The network helps show where V. Loup may publish in the future.

Co-authorship network of co-authors of V. Loup

This figure shows the co-authorship network connecting the top 25 collaborators of V. Loup. A scholar is included among the top collaborators of V. Loup based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Loup. V. Loup is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Radu, Ionut, B.-Y. Nguyen, P. Batude, et al.. (2023). Ultimate Layer Stacking Technology for High Density Sequential 3D Integration. SPIRE - Sciences Po Institutional REpository. 1–4. 2 indexed citations
2.
Loup, V., et al.. (2021). Wet Alkaline Etching of Si Selectively to SiGe for sub 10 nm Gate All Around Architectures. ECS Journal of Solid State Science and Technology. 10(1). 14007–14007. 4 indexed citations
3.
Loup, V., et al.. (2020). Wet and Siconi® Surface Preparation Sequences for SiGe Epitaxial Regrowth. ECS Meeting Abstracts. MA2020-02(24). 1729–1729.
4.
Barraud, Sylvain, B. Prévitali, C. Vizioz, et al.. (2020). 7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing. SPIRE - Sciences Po Institutional REpository. 1–2. 71 indexed citations
5.
Gergaud, Patrice, J. Aubin, Jean‐Michel Hartmann, et al.. (2018). Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni(Pt)/Ge0.9Sn0.1 system during solid-state reaction. Journal of Applied Physics. 124(8). 18 indexed citations
6.
Loup, V., Philippe Rodriguez, L. Vallier, et al.. (2018). GeSn surface preparation by wet cleaning and in-situ plasma treatments prior to metallization. Microelectronic Engineering. 203-204. 38–43. 5 indexed citations
7.
Loup, V., L. Vallier, M. Martin, et al.. (2017). Wet and Siconi® cleaning sequences for SiGe p-type metal oxide semiconductor channels. Microelectronic Engineering. 187-188. 84–89. 10 indexed citations
8.
Schwarzenbach, W., D. Delprat, J. Widiez, et al.. (2015). High Mobility Materials on Insulator for Advanced Technology Nodes. ECS Transactions. 66(4). 31–37. 1 indexed citations
9.
Baron, T., M. Martin, J. Moeyaert, et al.. (2014). Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices. Applied Physics Letters. 104(26). 39 indexed citations
10.
Besson, P., et al.. (2014). Backside and Bevel Contamination Removal. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 219. 272–275.
11.
Loup, V., et al.. (2013). Si and Sige Alloys Wet Etching Using Tmah Chemistry. ECS Meeting Abstracts. MA2013-02(30). 2101–2101. 2 indexed citations
12.
13.
Garros, X., P. Besson, G. Reimbold, et al.. (2008). Impact of crystallinity of High-k oxides on Vt instabilities of NMOS devices assessed by physical and electrical measurements. 330–334. 7 indexed citations
14.
Renault, O., L. Clavelier, C. Le Royer, et al.. (2007). 紫外線と軟X線光電子分光法で測定したHfO2/GeON/Ge積層膜のバンドオフセット. Applied Physics Letters. 90(5). 53508–53508. 1 indexed citations
15.
Martínez, E., O. Renault, L. Clavelier, et al.. (2007). Band offsets of HfO2∕GeON∕Ge stacks measured by ultraviolet and soft x-ray photoelectron spectroscopies. Applied Physics Letters. 90(5). 18 indexed citations
16.
Batude, P., X. Garros, L. Clavelier, et al.. (2007). Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks. Journal of Applied Physics. 102(3). 38 indexed citations
17.
Deguet, C., J. Dechamp, Christophe Morales, et al.. (2006). 200 mm Germanium-On-Insulator (GeOI) Structures Realized from Epitaxial Wafers Using the Smart Cut(TM) Technology. ECS Meeting Abstracts. MA2005-01(11). 483–483. 3 indexed citations
18.
Durand, Christophe, C. Vallée, V. Loup, et al.. (2004). Metal–insulator–metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(3). 655–660. 28 indexed citations
19.
Ducroquet, F., T. Ernst, O. Weber, et al.. (2003). Electrical properties of Si1−yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs. Applied Surface Science. 224(1-4). 274–277. 2 indexed citations
20.
Hartmann, Jean‐Michel, V. Loup, G. Rolland, et al.. (2002). SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition. Journal of Crystal Growth. 236(1-3). 10–20. 73 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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