J. Brini

3.2k total citations · 2 hit papers
90 papers, 2.5k citations indexed

About

J. Brini is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J. Brini has authored 90 papers receiving a total of 2.5k indexed citations (citations by other indexed papers that have themselves been cited), including 86 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J. Brini's work include Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Thin-Film Transistor Technologies (35 papers). J. Brini is often cited by papers focused on Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (52 papers) and Thin-Film Transistor Technologies (35 papers). J. Brini collaborates with scholars based in France, Greece and Bulgaria. J. Brini's co-authors include F. Balestra, G. Ghibaudo, C.A. Dimitriadis, G. Kamarinos, M. Benachir, S. Cristoloveanu, T. Elewa, Filippos Farmakis, Constantinos T. Angelis and M Miyasaka and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

J. Brini

86 papers receiving 2.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

1991 604 citations G. Ghibaudo, F. Balestra et al. physica status solidi (a) profile →
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

1987 533 citations F. Balestra, S. Cristoloveanu et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Brini France	22	2.4k	409	280	242	123	90	2.5k
D.J. Dumin United States	23	1.5k 0.6×	466 1.1×	153 0.5×	283 1.2×	48 0.4×	75	1.6k
G. Kamarinos France	19	1.2k 0.5×	412 1.0×	136 0.5×	244 1.0×	65 0.5×	113	1.3k
Elena Gnani Italy	30	2.5k 1.0×	442 1.1×	708 2.5×	310 1.3×	71 0.6×	194	2.7k
K.N. Bhat India	16	804 0.3×	164 0.4×	202 0.7×	323 1.3×	74 0.6×	110	915
Michel Depas Belgium	13	1.6k 0.7×	399 1.0×	88 0.3×	261 1.1×	43 0.3×	27	1.6k
P. Fazan United States	17	1.2k 0.5×	282 0.7×	186 0.7×	188 0.8×	53 0.4×	115	1.3k
H.‐H. Tseng United States	22	1.6k 0.7×	442 1.1×	195 0.7×	431 1.8×	25 0.2×	58	1.7k
Kwang Hong Lee Singapore	24	1.4k 0.6×	309 0.8×	493 1.8×	610 2.5×	139 1.1×	101	1.6k
H. Aharoni Israel	18	824 0.3×	527 1.3×	201 0.7×	283 1.2×	41 0.3×	84	930
M. Doczy United States	16	2.1k 0.9×	477 1.2×	672 2.4×	404 1.7×	58 0.5×	22	2.3k

Countries citing papers authored by J. Brini

Since Specialization

Citations

This map shows the geographic impact of J. Brini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Brini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Brini more than expected).

Fields of papers citing papers by J. Brini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Brini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Brini. The network helps show where J. Brini may publish in the future.

Co-authorship network of co-authors of J. Brini

This figure shows the co-authorship network connecting the top 25 collaborators of J. Brini. A scholar is included among the top collaborators of J. Brini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Brini. J. Brini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Brini, J.. (2013). Espace, nodalité, phobie. Cairn.info. 327–337. 1 indexed citations

Brini, J.. (2010). Lecture, écriture et ordinateur. Cairn.info. 121–129. 1 indexed citations

Chovet, A., et al.. (2003). Simple model for 1/f noise in polycrystalline silicon thin-film transistors. Journal of the Korean Physical Society. 42.

Dimitriadis, C.A., et al.. (2003). Origin of low frequency noise in polycrystalline silicon thin-film transistors. Thin Solid Films. 427(1-2). 113–116. 8 indexed citations

Dimitriadis, C.A., Filippos Farmakis, G. Kamarinos, & J. Brini. (2002). Origin of low-frequency noise in polycrystalline silicon thin-film transistors. Journal of Applied Physics. 91(12). 9919–9923. 23 indexed citations

Chovet, A., et al.. (2001). Low frequency noise in HEMT structure. Journal of the Korean Physical Society. 39. 5 indexed citations

Dózsa, L., Zs. J. Horváth, György Molnár, et al.. (2000). Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si. Semiconductor Science and Technology. 15(7). 653–657. 1 indexed citations

Ghibaudo, G., et al.. (1998). Impact of constant current stressing procedure on Stress Induced Leakage current generation in thin oxides. European Solid-State Device Research Conference. 544–547.

Dimitriadis, C.A., J. Brini, & G. Kamarinos. (1998). Low frequency noise in intrinsic low pressure chemical vapour deposited polysilicon resistors. The European Physical Journal Applied Physics. 3(3). 283–285. 2 indexed citations

10.

Farmakis, Filippos, et al.. (1998). Low frequency noise in Schottky barrier contacts of titanium nitride on n-type silicon. Semiconductor Science and Technology. 13(11). 1284–1289. 9 indexed citations

11.

Tassis, D.H., C.A. Dimitriadis, J. Brini, et al.. (1998). Low frequency noise in β-FeSi2/n-Si heterojunctions. Applied Physics Letters. 72(6). 713–715. 2 indexed citations

12.

Scarpa, A., G. Ghibaudo, A. Paccagnella, et al.. (1997). Stress induced leakage current dependence on oxide thickness, technology and stress level. European Solid-State Device Research Conference. 592–595. 7 indexed citations

13.

Balestra, F., G. Ghibaudo, J. Brini, et al.. (1994). Low Frequency Noise in the Base Current of Polysilicon Emitter BJT's after Hot-Carrier Stress. European Solid-State Device Research Conference. 60(4). 429–432. 3 indexed citations

14.

Ghibaudo, G., et al.. (1993). Analysis and Modeling of Low Frequency Noise in Extremely Deep Submicron Silicon CMOS Devices. European Solid-State Device Research Conference. 103–106. 2 indexed citations

15.

Balestra, F., J. Brini, G. Ghibaudo, et al.. (1993). Low-Frequency Noise Sources in Polysilicon Emiter Bipolar Transistors: Influence of Hot-Electron-Induced Degradation and Post-Stress Recovery. European Solid-State Device Research Conference. 107–110. 2 indexed citations

16.

Balestra, F., J. Brini, G. Ghibaudo, et al.. (1993). Low-frequency noise sources in polysilicon emitter bipolar transistors: Influence of hot-electron-induced degradation. AIP conference proceedings. 285. 288–291. 3 indexed citations

17.

Ouisse, T., et al.. (1992). Radiation-induced changes in floating-body phenomena in SOI MOSFET's. IEEE Transactions on Nuclear Science. 39(3). 372–375. 1 indexed citations

18.

Buisson, O., G. Ghibaudo, & J. Brini. (1992). Model for drain current RTS amplitude in small-area MOS transistors. Solid-State Electronics. 35(9). 1273–1276. 62 indexed citations

19.

Ghibaudo, G., et al.. (1991). Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors. physica status solidi (a). 124(2). 571–581. 604 indexed citations breakdown →

20.

Balestra, F., S. Cristoloveanu, M. Benachir, J. Brini, & T. Elewa. (1987). Volume Inversion in SOI MOSFETs with Double Gate Control: A New Transistor Operation with Greatly Enhanced Performance. European Solid-State Device Research Conference. 399–402. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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