A.M. Papon

712 citations

25 papers · 522 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 25
- Semiconductor materials and devices 16
- Silicon and Solar Cell Technologies 9
- Advancements in Semiconductor Devices and Circuit Design 9
- 3D IC and TSV technologies 6
- Integrated Circuits and Semiconductor Failure Analysis 3
- Advanced Memory and Neural Computing 3
Atomic and Molecular Physics, and Optics 4
- Semiconductor materials and interfaces 3

Co-authors: M. Bruel B. Aspar H. Moriceau E. Jalaguier F. Letertre A. Claverie Christophe Maleville C. Jaussaud
Journals: Microelectronic Engineering (4 papers)Journal of Electronic Materials (2 papers)Solid-State Electronics (2 papers)Electronics Letters (2 papers)Materials Science and Engineering B (2 papers)
Partner nations: France Switzerland Italy

In The Last Decade

A.M. Papon

23 papers receiving 503 citations

Peers

Countries citing papers authored by A.M. Papon

Since Specialization

Citations

This map shows the geographic impact of A.M. Papon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A.M. Papon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A.M. Papon more than expected).

Fields of papers citing papers by A.M. Papon

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A.M. Papon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A.M. Papon. The network helps show where A.M. Papon may publish in the future.

Co-authors

The 25 scholars most cited alongside A.M. Papon, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A.M. Papon Line = papers co-authored together A.M. Papon links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide Microelectronic Engineering ·C. Delwail, S. Joblot, F. Mazen, F. Abbate, Laurent Lachal, F. Milési, M. Bertoglio, A.M. Papon, M. Grégoire, Philippe Rodriguez, D. Mangelinck	2021	5
2	Potentialities of LiTaO3 for Bulk Acoustic Wave Filters SPIRE - Sciences Po Institutional REpository ·Marie Bousquet, P. Perreau, G. Castellan, Michael Bertucchi, C. Maeder-Pachurka, F. Delaguillaumie, Alice Joulie, Grégory Enyedi, B. Sailler, D. Mariolle, Patrice Gergaud, A.M. Papon, F.-X. Darras, F. Mazen, Pauline Sylvia Pokam Kuisseu, Yann Lamy, C. Billard, Alexandre Reinhardt	2020	7
3	Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si_0.8Ge_0.2 Epitaxial Layers ECS Journal of Solid State Science and Technology ·L. Dagault, Pablo Acosta-Alba, S. Kerdilès, Jean‐Paul Barnes, Jean‐Michel Hartmann, Patrice Gergaud, Tuan Nguyen, Adeline Grenier, A.M. Papon, Nicolas Bernier, V. Delaye, J. Aubin, F. Cristiano	2019	17
4	Status of p-on-n Arsenic-Implanted HgCdTe Technologies Journal of Electronic Materials ·L. Mollard, G. Destéfanis, G. Bourgeois, A. Ferron, N. Baier, O. Gravrand, Jean‐Paul Barnes, A.M. Papon, F. Milési, A. Kerlain, Laurent Rubaldo	2011	29
5	Study of defects in Al<inf>2</inf>O<inf>3</inf> blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses Institutional Research Information System (University of Udine) ·L. Masoero, G. Molas, P. Blaise, Jean-Philippe Colonna, Elisa Vianello, L. Selmi, A.M. Papon, D. Lafond, Ferran Martı́n, M. Gély, Christophe Licitra, Jean‐Paul Barnes, G. Ghibaudo, B. De Salvo	2011	1
6	Investigation of charge-trap memories with AlN based band engineered storage layers Solid-State Electronics ·G. Molas, J. P. Colonna, R. Kies, D. Belhachemi, M. Bocquet, M. Gély, V. Vidal, P. Brianceau, E. Martínez, A.M. Papon, Christophe Licitra, L. Vandroux, G. Ghibaudo, B. De Salvo	2011	3
7	Crystallographic orientation engineering in silicon-on-insulator substrates Applied Physics Letters ·Thomas Signamarcheix, B. Biasse, A.M. Papon, E. Nolot, F. Mazen, Jérôme Leveneur, O. Faynot, L. Clavelier, B. Ghyselen	2010	4
8	Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT) Thomas Signamarcheix, B. Biasse, A.M. Papon, E. Nolot, B. Ghyselen, L. Clavelier	2009	2
9	An In-Depth Investigation of Physical Mechanisms Governing SANOS Memories Characteristics Institutional Research Information System (University of Udine) ·M. Bocquet, Elisa Vianello, G. Molas, L. Perniola, H. Grampeix, F. Martín, J. P. Colonna, A.M. Papon, P. Brianceau, M. Gély, B. De Salvo, G. Pananakakis, G. Ghibaudo, L. Selmi	2009	4
10	Smart-Cut(R) process: an original way to obtain thin films by ion implantation B. Aspar, C. Lagahe, H. Moriceau, A. Soubie, E. Jalaguier, B. Biasse, A.M. Papon, Amal Chabli, A. Claverie, J. Grisolia, G. Benassayag, T. Barge, F. Letertre, B. Ghyselen	2003	0
11	Poly-Si gate patterning issues for ultimate MOSFET Microelectronic Engineering ·D. Louis, M.E. Nier, C. Fery, M. Heitzmann, A.M. Papon, S. Renard	2002	4
12	A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Solid-State Electronics ·C. Caillat, S. Deleonibus, G. Guégan, M. Heitzmann, M.E. Nier, S. Tedesco, B. Dal’zotto, F. Martín, P. Mur, A.M. Papon, G. Lecarval, B. Prévitali, A. Toffoli, F. Allain, S. Biswas, Fabrice Jourdan, Pascal Fugier, J.L. Dichiaro	2002	3
13	The generic nature of the Smart-Cut® process for thin film transfer Journal of Electronic Materials ·B. Aspar, H. Moriceau, E. Jalaguier, C. Lagahe, A. Soubie, B. Biasse, A.M. Papon, A. Claverie, J. Grisolia, G. Benassayag, F. Letertre, O. Rayssac, T. Barge, Christophe Maleville, B. Ghyselen	2001	81
14	A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF ₂ pockets IEEE Electron Device Letters ·S. Deleonibus, C. Caillat, G. Guégan, M. Heitzmann, M.E. Nier, S. Tedesco, B. Dal’zotto, F. Martín, P. Mur, A.M. Papon, G. Lecarval, S. Biswas, D. Souil	2000	24
15	Transfer of 3 in GaAs film on silicon substrateby proton implantation process Electronics Letters ·E. Jalaguier, B. Aspar, S. Pocas, Jean-François Michaud, Marc Zussy, A.M. Papon, M. Bruel	1998	65
16	Basic mechanisms involved in the Smart-Cut® process Microelectronic Engineering ·B. Aspar, M. Bruel, H. Moriceau, Christophe Maleville, T. Poumeyrol, A.M. Papon, A. Claverie, G. Benassayag, A.J. Auberton‐Hervé, T. Barge	1997	104
17	Buried oxide layers formed by low dose SIMOX processes Microelectronic Engineering ·B. Aspar, C. Guilhalmenc, C. Pudda, Á. García, A.M. Papon, A.J. Auberton‐Hervé, J.M. Lamure	1995	3
18	Defects in SIMOX structures: some process dependence Materials Science and Engineering B ·J. Margail, J.M. Lamure, A.M. Papon	1992	22
19	Suppression mechanisms for oxidation stacking faults in silicon on insulator Journal of Applied Physics ·N. Guillemot, D. Tsoukalas, C. Tsamis, J. Margail, A.M. Papon, J. Stoëmenos	1992	13
20	Defects in SIMOX structures: causes and solutions Vacuum ·C. Jaussaud, J. Stoëmenos, J. Margail, A.M. Papon, M. Bruel	1991	19

About A.M. Papon

A.M. Papon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 25 papers that have together received 522 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Silicon and Solar Cell Technologies (9 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), 3D IC and TSV technologies (6 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers), Advanced Memory and Neural Computing (3 papers), Semiconductor materials and interfaces (3 papers) and Electronic and Structural Properties of Oxides (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (468 citations), Atomic and Molecular Physics, and Optics (102 citations), Computational Mechanics (61 citations), Structural Biology (4 citations) and Biomedical Engineering (119 citations). A.M. Papon has collaborated with scholars based in France, Switzerland and Italy. Frequent co-authors include M. Bruel, B. Aspar, H. Moriceau, E. Jalaguier, F. Letertre, A. Claverie, Christophe Maleville, C. Jaussaud, T. Barge and G. Benassayag. Their work appears in journals such as Microelectronic Engineering, Journal of Electronic Materials, Solid-State Electronics, Electronics Letters and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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