S. Tedesco

567 total citations
42 papers, 416 citations indexed

About

S. Tedesco is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, S. Tedesco has authored 42 papers receiving a total of 416 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 13 papers in Biomedical Engineering and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in S. Tedesco's work include Advancements in Photolithography Techniques (23 papers), Semiconductor materials and devices (19 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). S. Tedesco is often cited by papers focused on Advancements in Photolithography Techniques (23 papers), Semiconductor materials and devices (19 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). S. Tedesco collaborates with scholars based in France, Switzerland and Japan. S. Tedesco's co-authors include B. Dal’zotto, P. Butaud, Julien Vidal, M. Heitzmann, B. Pannetier, S. Landis, B. Diény, S. Deleonibus, B. Rodmacq and G. Guégan and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

S. Tedesco

40 papers receiving 397 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Tedesco France 11 279 143 128 60 58 42 416
B. Dal’zotto France 12 298 1.1× 209 1.5× 153 1.2× 78 1.3× 58 1.0× 35 448
Toshiyuki Takizawa Japan 10 252 0.9× 185 1.3× 98 0.8× 22 0.4× 179 3.1× 23 391
Gong-Cheng Lin Taiwan 12 310 1.1× 206 1.4× 86 0.7× 14 0.2× 108 1.9× 23 410
Z.H. Zhu United States 13 581 2.1× 404 2.8× 78 0.6× 18 0.3× 26 0.4× 38 646
B. P. Van der Gaag United States 15 456 1.6× 538 3.8× 99 0.8× 23 0.4× 121 2.1× 33 654
R. Steingrüber Germany 11 442 1.6× 272 1.9× 62 0.5× 53 0.9× 20 0.3× 43 540
I. I. Reshina Russia 10 234 0.8× 354 2.5× 77 0.6× 14 0.2× 27 0.5× 33 425
Newton C. Frateschi Brazil 16 623 2.2× 494 3.5× 149 1.2× 22 0.4× 21 0.4× 85 709
Y. Okuno United States 14 389 1.4× 267 1.9× 51 0.4× 24 0.4× 24 0.4× 33 440

Countries citing papers authored by S. Tedesco

Since Specialization
Citations

This map shows the geographic impact of S. Tedesco's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Tedesco with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Tedesco more than expected).

Fields of papers citing papers by S. Tedesco

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Tedesco. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Tedesco. The network helps show where S. Tedesco may publish in the future.

Co-authorship network of co-authors of S. Tedesco

This figure shows the co-authorship network connecting the top 25 collaborators of S. Tedesco. A scholar is included among the top collaborators of S. Tedesco based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Tedesco. S. Tedesco is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pain, L., et al.. (2011). IMAGINE: an open consortium to boost maskless lithography take off: first assessment results on MAPPER technology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7970. 79700Y–79700Y. 8 indexed citations
2.
Tedesco, S., et al.. (2006). Direct write lithography: the global solution for R&D and manufacturing. Comptes Rendus Physique. 7(8). 910–923. 18 indexed citations
3.
Landis, S., et al.. (2003). Negative tone chemically amplified resist formulation optimizations for ultra high-resolution lithography. Microelectronic Engineering. 67-68. 274–282. 6 indexed citations
4.
Raynaud, C., O. Faynot, J.L. Pelloie, et al.. (2003). Scalability of fully-depleted SOI technology into 0.13 μm 1.2 V-1 V CMOS generation. 86–87. 1 indexed citations
5.
Bouillon, Pierre, F. Bénistant, T. Skotnicki, et al.. (2002). Re-examination of indium implantation for a low power 0.1 μm technology. 897–900. 7 indexed citations
6.
Charvolin, T., E. Hadji, Emmanuelle Picard, et al.. (2002). Realization of two-dimensional optical devices using photonic band gap structures on silicon-on-insulator. Microelectronic Engineering. 61-62. 545–548. 4 indexed citations
7.
Caillat, C., S. Deleonibus, G. Guégan, et al.. (2002). A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching. Solid-State Electronics. 46(3). 349–352. 3 indexed citations
8.
9.
Guégan, G., S. Deleonibus, G. Bertrand, et al.. (2001). Gate and Source/Drain Engineering for 50 nm P-Channel MOSFET. 171–174. 5 indexed citations
10.
Mollard, L., S. Tedesco, B. Dal’zotto, et al.. (2001). Hybrid deep UV–e-beam lithography for the fabrication of dual damascene structures. Microelectronic Engineering. 57-58. 269–275.
11.
Deleonibus, S., C. Caillat, G. Guégan, et al.. (2000). A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF 2 pockets. IEEE Electron Device Letters. 21(4). 173–175. 24 indexed citations
12.
Ducroquet, F., B. Prévitali, Y. Gobil, et al.. (2000). Full CMP Integration of TiN Damascene Metal Gate Devices. 408–411. 2 indexed citations
13.
Pain, L., Craig Higgins, S. Tedesco, et al.. (2000). Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(6). 3388–3395. 14 indexed citations
14.
Deleonibus, S., C. Caillat, J. Gautier, et al.. (1999). The decananometer CMOS era - Is there CMOS after CMOS?. European Solid-State Device Research Conference. 1. 119–126. 1 indexed citations
15.
Caillat, C., S. Deleonibus, G. Guégan, et al.. (1999). 65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation. 89–90. 16 indexed citations
16.
Butaud, P., et al.. (1999). Magnetic Field Induced Localization in a Two-Dimensional Superconducting Wire Network. Physical Review Letters. 83(24). 5102–5105. 94 indexed citations
17.
Landis, S., B. Rodmacq, B. Diény, et al.. (1999). Domain structure of magnetic layers deposited on patterned silicon. Applied Physics Letters. 75(16). 2473–2475. 35 indexed citations
18.
Szmanda, Charles R., Robert L. Brainard, Tsutomu Tanaka, et al.. (1999). Measuring acid generation efficiency in chemically amplified resists with all three beams. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(6). 3356–3361. 40 indexed citations
19.
Tedesco, S., et al.. (1991). Phase-shifting mask and top-imaging resist for subhalf-micron i-line and deep-ultraviolet lithography. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 9(6). 3166–3171. 2 indexed citations
20.
Guégan, G., J. Gautier, Mathieu Guérin, et al.. (1988). HALF-MICROMETER N-MOS TECHNOLOGY FOR GIGABIT LOGIC. Le Journal de Physique Colloques. 49(C4). C4–737. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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