V. Mazzocchi

878 citations

29 papers · 452 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 29
- Semiconductor materials and devices 21
- Advancements in Semiconductor Devices and Circuit Design 13
- Silicon and Solar Cell Technologies 10
- Ferroelectric and Negative Capacitance Devices 4
- 3D IC and TSV technologies 4
- Thin-Film Transistor Technologies 4
- Semiconductor Lasers and Optical Devices 3
Atomic and Molecular Physics, and Optics 10
- Semiconductor materials and interfaces 7

Co-authors: Jean‐Michel Hartmann M. Vinet C. Tabone Louis Hutin A. Pouydebasque C. Le Royer H. Grampeix O. Faynot
Journals: Microelectronic Engineering (2 papers)Solid-State Electronics (2 papers)IEEE Electron Device Letters (1 paper)ACS Photonics (1 paper)Journal of Crystal Growth (1 paper)
Partner nations: France United States Czechia

In The Last Decade

V. Mazzocchi

28 papers receiving 434 citations

Peers

Countries citing papers authored by V. Mazzocchi

Since Specialization

Citations

This map shows the geographic impact of V. Mazzocchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Mazzocchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Mazzocchi more than expected).

Fields of papers citing papers by V. Mazzocchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Mazzocchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Mazzocchi. The network helps show where V. Mazzocchi may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. Mazzocchi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Mazzocchi Line = papers co-authored together V. Mazzocchi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Epitaxy of Group-IV Semiconductors for Quantum Electronics ECS Transactions ·Jean-Michel Hartmann, Nicolas Bernier, F. Pierre, Jean‐Paul Barnes, V. Mazzocchi, Brianny Morris, Dheajeng Putri Ardaningtyas, Zuo Yue, S. De Franceschi	2023	7
2	Detection of Single W-Centers in Silicon ACS Photonics ·衛男岡, Alrik Durand, Péter Udvarhelyi, Tobias Herzig, 郑小华, Sébastien Pezzagna, Jan Meijer, Isabelle Robert-Philip, Marco Abbarchi, Jean‐Michel Hartmann, V. Mazzocchi, Jean‐Michel Gérard, Ádám Gali, V. Jacques, Guillaume Cassabois, A. Dréau	2022	55
3	A review of the full 500°C low temperature technological modules development for high performance and reliable 3D Sequential Integration SPIRE - Sciences Po Institutional REpository ·C. Fenouillet-Béranger, Laurent Brunet, P. Batude, F. Andrieu, Lloyd Montuschi, B. Prévitali, 谢小平, V. Mazzocchi, Pablo Acosta-Alba, S. Kerdilès, V.M. Cherkasskii, C. Guérin, C. Vizioz, F. Ponthenier, N. Rambal, M. Cassé, X. Garros, wolfgang hohenforst-schmidt, F. Aussenac, M. Vinet	2019	2
4	Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, SiGe and SiGeB ECS Transactions ·V. Mazzocchi, Jean‐Michel Hartmann, M. Veillerot, Eleonora Marconi, Matthias Bauer	2018	3
5	A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe ECS Transactions ·Jean‐Michel Hartmann, V. Mazzocchi, F. Pierre, Jean‐Paul Barnes	2018	10
6	Recent advances in 3D VLSI integration C. Fenouillet-Béranger, P. Batude, Laurent Brunet, V. Mazzocchi, Liliang Chan, Fabien Deprat, Lloyd Montuschi, M.-P. Samson, B. Prévitali, Yan Li, N. Rambal, F. Andrieu, Olivier Billoint, Aida Shikhaliyeva, Sébastien Thuries, G. Cibrario, M. Vinet	2016	1
7	Ge Condensation Using Rapid Thermal Oxidation for SGOI Substrate Preparation ECS Transactions ·Olivier Gourhant, 新堀二千男, D. Barge, V. Mazzocchi, François Andrieu, F. Abbate, M. Juhel, 滋中嶋, 孫嘉蘭, Alexandre Pofelski, M. Bidaud, I. KAWAKUBO	2014	3
8	3D monolithic integration P. Batude, M. Vinet, A. Pouydebasque, C. Le Royer, B. Prévitali, C. Tabone, Jean‐Michel Hartmann, L. Sanchez, L. Baud, V. Carron, A. Toffoli, F. Allain, V. Mazzocchi, D. Lafond, S. Deleonibus, O. Faynot	2011	18
9	High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs Solid-State Electronics ·C. Le Royer, Carla Lucchino, Benjamin Vincent, K. Romanjek, Tse-Ting Chan, H. Grampeix, V. Mazzocchi, V. Carron, Adie Nugroho, Jean‐Michel Hartmann, C. Arvet, C. Vizioz, C. Tabone, Louis Hutin, P. Batude, M. Vinet	2011	11
10	High Temperature Ion Implantation Evaluation In Silicon & Germanium AIP conference proceedings ·F. Milési, Jérôme Leveneur, V. Mazzocchi, F. Mazen, Н М Рязанова, Billy J. Garrett, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki	2011	5
11	GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current IEEE Electron Device Letters ·Louis Hutin, C. Le Royer, Carla Lucchino, Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, C. Tabone, B. Prévitali, A. Pouydebasque, M. Vinet, O. Faynot	2010	93
12	3D monolithic integration: Technological challenges and electrical results Microelectronic Engineering ·M. Vinet, P. Batude, C. Tabone, B. Prévitali, 宗介見田, A. Pouydebasque, L. Clavelier, Alexandre Valentian, Olivier Thomas, 晃一志渡, L. Sanchez, L. Baud, A. Roman, V. Carron, F. Nemouchi, V. Mazzocchi, H. Grampeix, Ayed Ben Amara, S. Deleonibus, O. Faynot	2010	52
13	Diffusion and activation of Boron and Phosphorus in preamorphized and crystalline Germanium using ultra fast spike anneal V. Mazzocchi, Xavier Llimona i Pagès, M. Py, Jean‐Paul Barnes, 纪奎江, Louis Hutin, R. Truche, Vladislav P. Makhrov, M. Vinet, C. Le Royer, Billy J. Garrett	2009	3
14	High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate Solid-State Electronics ·K. Romanjek, Louis Hutin, C. Le Royer, A. Pouydebasque, M.-A. Jaud, C. Tabone, E. Augendre, L. Sanchez, Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, Fabio Tedeschi, R. Truche, L. Clavelier, P. Scheiblin, X. Garros, G. Reimbold, M. Vinet, F. Boulanger, S. Deleonibus	2009	32
15	First Demonstration of Deep Sub-Micron Germanium-on-Insulator PMOSFET with Adapted Threshold Voltage A. Pouydebasque, C. Le Royer, C. Tabone, K. Romanjek, E. Augendre, L. Sanchez, Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, Fabio Tedeschi, R. Truche, L. Clavelier, S. Deleonibus	2008	8
16	Doping of germanium by phosphorus implantation: Prediction of diffused profiles with simulation Materials Science and Engineering B ·S. Koffel, P. Scheiblin, A. Claverie, V. Mazzocchi	2008	12
17	High-k/metal Gate GeOI pMOSFET: Validation of the Lim&Fossum model for interface trap density extraction K. Romanjek, C. Le Royer, A. Pouydebasque, E. Augendre, M. Vinet, C. Tabone, L. Sanchez, Jean‐Michel Hartmann, H. Grampeix, V. Mazzocchi, L. Clavelier, X. Garros, G. Reimbold, Gabor Bagyo, F. Boulanger, S. Deleonibus	2008	7
18	Experimental Investigation of the Impact of Implanted Phosphorus Dose and Anneal on Dopant Diffusion and Activation in Germanium MRS Proceedings ·V. Mazzocchi, S. Koffel, C. Le Royer, P. Scheiblin, Jean‐Paul Barnes, M. Hopstaken	2008	3
19	Enabling 3D Monolithic Integration ECS Transactions ·P. Batude, M. Vinet, A. Pouydebasque, L. Clavelier, 宗介見田, C. Tabone, B. Prévitali, Loïc Sanchez, L. Baud, Xianghua Fu, V. Carron, F. Nemouchi, S. Pocas, C. Comboroure, V. Mazzocchi, H. Grampeix, F. Aussenac, S. Deleonibus	2008	17
20	Activation level in boron-doped thin germanium-on-insulator (GeOI): Extraction method and impact of mobility Materials Science in Semiconductor Processing ·Louis Hutin, S. Koffel, C. Le Royer, L. Clavelier, P. Scheiblin, V. Mazzocchi, S. Deleonibus	2008	7

About V. Mazzocchi

V. Mazzocchi is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Hardware and Architecture, Computational Mechanics and Biomedical Engineering, having authored 29 papers that have together received 452 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Silicon and Solar Cell Technologies (10 papers), Semiconductor materials and interfaces (7 papers), Ferroelectric and Negative Capacitance Devices (4 papers), 3D IC and TSV technologies (4 papers), Thin-Film Transistor Technologies (4 papers) and Semiconductor Lasers and Optical Devices (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (409 citations), Atomic and Molecular Physics, and Optics (120 citations), Biomedical Engineering (111 citations), Materials Chemistry (91 citations) and Computational Mechanics (25 citations). V. Mazzocchi has collaborated with scholars based in France, United States and Czechia. Frequent co-authors include Jean‐Michel Hartmann, M. Vinet, C. Tabone, Louis Hutin, A. Pouydebasque, C. Le Royer, H. Grampeix, O. Faynot, B. Prévitali and Jean‐Paul Barnes. Their work appears in journals such as Microelectronic Engineering, Solid-State Electronics, IEEE Electron Device Letters, ACS Photonics and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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