M. Bocquet

1.8k total citations
66 papers, 857 citations indexed

About

M. Bocquet is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, M. Bocquet has authored 66 papers receiving a total of 857 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 9 papers in Polymers and Plastics. Recurrent topics in M. Bocquet's work include Advanced Memory and Neural Computing (47 papers), Semiconductor materials and devices (37 papers) and Ferroelectric and Negative Capacitance Devices (35 papers). M. Bocquet is often cited by papers focused on Advanced Memory and Neural Computing (47 papers), Semiconductor materials and devices (37 papers) and Ferroelectric and Negative Capacitance Devices (35 papers). M. Bocquet collaborates with scholars based in France, Italy and United Kingdom. M. Bocquet's co-authors include Damien Deleruyelle, Christophe Müller, Jean‐Michel Portal, Hassen Aziza, Hyesun Hwang, Jeonghwan Song, Amit Prakash, G. Molas, E. Jalaguier and Damien Querlioz and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Carbon.

In The Last Decade

M. Bocquet

62 papers receiving 837 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Bocquet France 17 814 181 146 96 50 66 857
Damien Deleruyelle France 17 789 1.0× 241 1.3× 156 1.1× 137 1.4× 34 0.7× 66 844
Wenhao Chen United States 14 572 0.7× 131 0.7× 194 1.3× 106 1.1× 40 0.8× 38 678
Alvaro Padilla United States 10 705 0.9× 330 1.8× 119 0.8× 147 1.5× 60 1.2× 12 755
Rashmi Jha United States 14 689 0.8× 113 0.6× 169 1.2× 78 0.8× 58 1.2× 93 772
Joon Sohn United States 12 588 0.7× 220 1.2× 139 1.0× 108 1.1× 58 1.2× 16 683
L. Altimime Belgium 19 1.3k 1.5× 323 1.8× 235 1.6× 191 2.0× 27 0.5× 48 1.3k
Luca Vandelli Italy 18 1.6k 1.9× 347 1.9× 214 1.5× 166 1.7× 28 0.6× 37 1.6k
Takumi Mikawa Japan 16 993 1.2× 167 0.9× 212 1.5× 145 1.5× 67 1.3× 33 1.1k
Frederick T. Chen Taiwan 18 959 1.2× 142 0.8× 213 1.5× 129 1.3× 58 1.2× 38 999
Chih-Yang Lin Taiwan 14 505 0.6× 149 0.8× 179 1.2× 110 1.1× 49 1.0× 23 599

Countries citing papers authored by M. Bocquet

Since Specialization
Citations

This map shows the geographic impact of M. Bocquet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Bocquet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Bocquet more than expected).

Fields of papers citing papers by M. Bocquet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Bocquet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Bocquet. The network helps show where M. Bocquet may publish in the future.

Co-authorship network of co-authors of M. Bocquet

This figure shows the co-authorship network connecting the top 25 collaborators of M. Bocquet. A scholar is included among the top collaborators of M. Bocquet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Bocquet. M. Bocquet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hirtzlin, Tifenn, Elisa Vianello, Jacques Droulez, et al.. (2025). The logarithmic memristor-based Bayesian machine. Communications Engineering. 4(1). 35–35. 2 indexed citations
2.
Coignus, J., et al.. (2024). Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays. SPIRE - Sciences Po Institutional REpository. 1–7.
3.
Bènevent, Evangéline, et al.. (2024). Low-Temperature Fabrication of Mesoporous SiO2 CBRAM Memory Cells on Flexible Substrates. SPIRE - Sciences Po Institutional REpository. 1–4. 1 indexed citations
4.
Walder, Jean-Pierre, Elisa Vianello, Tifenn Hirtzlin, et al.. (2024). Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell. Nature Communications. 15(1). 741–741. 22 indexed citations
5.
Bènevent, Evangéline, et al.. (2024). Low-Temperature Fabrication of Mesoporous SiO₂ CBRAM Memory Cells on Flexible Substrates. SPIRE - Sciences Po Institutional REpository. 4(1). 30–41. 1 indexed citations
6.
Garg, Nikhil, P. Dufour, M. Bocquet, et al.. (2024). Versatile CMOS Analog LIF Neuron for Memristor-Integrated Neuromorphic Circuits. SPIRE - Sciences Po Institutional REpository. 185–192.
7.
Noël, Jean-Philippe, Bastien Giraud, M. Bocquet, et al.. (2023). Binary ReRAM-based BNN first-layer implementation. SPIRE - Sciences Po Institutional REpository. 1–6.
8.
Bocquet, M., et al.. (2018). Comprehensive Phase-Change Memory Compact Model for Circuit Simulation. IEEE Transactions on Electron Devices. 65(10). 4282–4289. 10 indexed citations
9.
Huang, Ruomeng, Gabriela P. Kissling, M. Bocquet, et al.. (2018). Conductive-bridge memory cells based on a nanoporous electrodeposited GeSbTe alloy. Nanotechnology. 30(2). 25202–25202. 13 indexed citations
10.
Girardeaux, C., Alain Baronnet, M. Bocquet, et al.. (2015). Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure. Surface Science. 642. L1–L5. 13 indexed citations
11.
Clermidy, Fabien, Natalija Jovanović, Olivier Thomas, et al.. (2014). Resistive memories: which applications?. Design, Automation, and Test in Europe. 1–6. 8 indexed citations
12.
Bocquet, M., Hassen Aziza, Weisheng Zhao, et al.. (2014). Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM). Journal of Low Power Electronics and Applications. 4(1). 1–14. 21 indexed citations
13.
Bocquet, M., Damien Deleruyelle, Hassen Aziza, et al.. (2014). Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories. IEEE Transactions on Electron Devices. 61(3). 674–681. 84 indexed citations
14.
Turkyilmaz, Ogun, Marina Reyboz, Fabien Clermidy, et al.. (2012). RRAM-based FPGA for "normally off, instantly on" applications. 101–108. 37 indexed citations
15.
Deleruyelle, Damien, Magali Putero, M. Bocquet, et al.. (2012). Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate. Solid-State Electronics. 79. 159–165. 23 indexed citations
16.
17.
Molas, G., R. Kies, M. Bocquet, et al.. (2010). Investigation of charge-trap memories with AlN based band engineered storage layers. 1–4. 1 indexed citations
18.
Gay, Guillaume, G. Molas, M. Bocquet, et al.. (2010). Hybrid silicon nanocrystals/SiN charge trapping layer with high-k dielectrics for FN and CHE programming. 1071. 54–55. 2 indexed citations
19.
Molas, G., M. Bocquet, Julien Buckley, et al.. (2008). Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories. Microelectronic Engineering. 85(12). 2393–2399. 8 indexed citations
20.
Grampeix, H., G. Molas, M. Bocquet, et al.. (2007). Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories. ECS Transactions. 11(7). 213–225. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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