G. Le Carval

563 total citations
40 papers, 372 citations indexed

About

G. Le Carval is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Le Carval has authored 40 papers receiving a total of 372 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in G. Le Carval's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers) and Silicon Carbide Semiconductor Technologies (8 papers). G. Le Carval is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (26 papers) and Silicon Carbide Semiconductor Technologies (8 papers). G. Le Carval collaborates with scholars based in France and United States. G. Le Carval's co-authors include C. Le Royer, S. Deleonibus, L. Clavelier, F. Mayer, Daniela Munteanu, S. Cristoloveanu, Marie-Anne Jaud, C. Tabone, Anne Kaminski‐Cachopo and A. Poncet and has published in prestigious journals such as Journal of The Electrochemical Society, The Journal of Physical Chemistry C and IEEE Transactions on Electron Devices.

In The Last Decade

G. Le Carval

39 papers receiving 360 citations

Peers

Countries citing papers authored by G. Le Carval

Since Specialization

Citations

This map shows the geographic impact of G. Le Carval's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Le Carval with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Le Carval more than expected).

Fields of papers citing papers by G. Le Carval

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Le Carval. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Le Carval. The network helps show where G. Le Carval may publish in the future.

Co-authorship network of co-authors of G. Le Carval

This figure shows the co-authorship network connecting the top 25 collaborators of G. Le Carval. A scholar is included among the top collaborators of G. Le Carval based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Le Carval. G. Le Carval is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization 2015 ·IEEE Transactions on Electron Devices ·(unknown), G. Molas, P. Blaise, M. Bernard, (unknown), G. Le Carval, V. Delaye, A. Toffoli, G. Ghibaudo, Fabien Clermidy, B. De Salvo, L. Perniola	43
2	Film-thickness-dependent conduction in ordered Si quantum dot arrays 2012 ·Nanotechnology ·Kavita Surana, (unknown), Jean‐Marie Lebrun, B. Doisneau, Daniel Bellet, L. Vandroux, G. Le Carval, Mathieu Baudrit, Philippe Thony, P. Mur	14
3	Simulation of Electronic Transport in Silicon Nanocrystal Solids 2012 ·The Journal of Physical Chemistry C ·(unknown), Anne Kaminski‐Cachopo, A. Poncet, G. Le Carval	18
4	Analytical modelling of Ballistic and Quasi-Ballistic Nanowires: validation and application to CMOS architecture 2009 ·TechConnect Briefs ·(unknown), (unknown), G. Le Carval, S. Martinie, Daniela Munteanu	1
5	Physics-Based Analytical Modeling of Quasi-Ballistic Transport in Double-Gate MOSFETs: From Device to Circuit Operation 2009 ·IEEE Transactions on Electron Devices ·(unknown), Daniela Munteanu, G. Le Carval, (unknown)	11
6	Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects 2009 ·Molecular Simulation ·(unknown), Daniela Munteanu, G. Le Carval, Jean‐Luc Autran	1
7	Phonon transport in electronic devices: From diffusive to ballistic regime 2008 ·(unknown), (unknown), J. C. Barbé, G. Le Carval	5
8	105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers 2008 ·Solid-State Electronics ·C. Le Royer, L. Clavelier, C. Tabone, K. Romanjek, C. Deguet, L. Sanchez, Jean‐Michel Hartmann, (unknown), H. Grampeix, (unknown), G. Le Carval, R. Truche, A. Pouydebasque, M. Vinet, S. Deleonibus	24
9	Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit 2006 ·IEEE Transactions on Electron Devices ·F. Mayer, C. Le Royer, G. Le Carval, L. Clavelier, S. Deleonibus	42
10	Co-integration of 2 mV/dec Subthreshold Slope Impact Ionization MOS (I-MOS) with CMOS 2006 ·F. Mayer, C. Le Royer, G. Le Carval, C. Tabone, L. Clavelier, S. Deleonibus	17
11	Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs 2006 ·Journal of Computational Electronics ·Marco Pala, C. Le Royer, G. Le Carval, L. Clavelier	4
12	Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study 2006 ·Journal of Computational Electronics ·(unknown), Sylvain Barraud, Philippe Dollfus, H. Jaouen, (unknown), G. Le Carval	3
13	Monte Carlo simulation of ultimate DGMOS based on a Pearson Effective Potential formalism 2006 ·(unknown), Sylvain Barraud, Philippe Dollfus, H. Jaouen, G. Le Carval	1
14	High frequency simulation and characterization of advanced copper interconnects 2003 ·(unknown), G. Le Carval, (unknown)	0
15	Modeling and Simulation of Single-Electron Multi Tunnel Junction Memory 2002 ·TechConnect Briefs ·D. Fraboulet, G. Le Carval, C. Le Royer, M. Sanquer	1
16	Assessment of Anomalous Behavior in Hydrodynamic Simulation of CMOS Bulk and Partially Depleted SOI Devices 2002 ·Journal of The Electrochemical Society ·Daniela Munteanu, G. Le Carval	3
17	Coulomb Blockade in Thin SOI Nanodevices 2002 ·SPIRE - Sciences Po Institutional REpository ·D. Fraboulet, X. Jehl, D. Mariolle, C. Le Royer, G. Le Carval, P. Scheiblin, P. Rivallin, L. Mollard, (unknown), (unknown), A. Toffoli, G. Molas, B. De Salvo, S. Deleonibus, M. Sanquer	3
18	Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools 2002 ·(unknown), C. Bermond, Sylvie Putot, G. Le Carval, B. Fléchet	10
19	Performance Characterization of Advanced Interconnects on High Speed VLSI Circuits 2000 ·C. Bermond, B. Fléchet, G. Le Carval, (unknown), Y. Morand, (unknown), (unknown)	1
20	Advantages of the Methodology Using DOE and Simulation for Optimising Advanced Technologies - Application to a Real 0.35 μM PMOS Architecture 1994 ·G. Le Carval, (unknown), G. Guégan, (unknown)	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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