M. Heitzmann

598 citations

38 papers · 393 indexed · h-index 10

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Photonic Crystals and Applications
- Magnetic properties of thin films
Electrical and Electronic Engineering top 10%
- Photonic and Optical Devices
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis

Papers in ⓘ

Architecture 1
Electrical and Electronic Engineering 34
- Semiconductor materials and devices 18
- Photonic and Optical Devices 12
- Advancements in Semiconductor Devices and Circuit Design 10
- Integrated Circuits and Semiconductor Failure Analysis 10
- Semiconductor Lasers and Optical Devices 9
- Advancements in Photolithography Techniques 6

Co-authors: B. Dal’zotto (11 shared papers)S. Lardenois (7 shared papers)Pascal Demange (6 shared papers)Laurent Vivien (5 shared papers)S. Laval (6 shared papers)Éric Cassan (6 shared papers)S. Tedesco (12 shared papers)R. Orobtchouk (4 shared papers)
Journals: Microelectronic Engineering (4 papers)Applied Physics Letters (3 papers)IEEE Transactions on Electron Devices (2 papers)Solid-State Electronics (2 papers)Japanese Journal of Applied Physics (1 paper)
Partner nations: France Switzerland Brunei

In The Last Decade

M. Heitzmann

37 papers receiving 381 citations

Peers

Countries citing papers authored by M. Heitzmann

Since Specialization

Citations

This map shows the geographic impact of M. Heitzmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Heitzmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Heitzmann more than expected).

Fields of papers citing papers by M. Heitzmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Heitzmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Heitzmann. The network helps show where M. Heitzmann may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Heitzmann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Heitzmann Line = papers co-authored together M. Heitzmann links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 38 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors Optics Letters ·S. Lardenois, Pascal Demange, Laurent Vivien, Éric Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N. Bouzaida, L. Mollard	2003	99
2	Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator Applied Physics Letters ·M. Zelsmann, Emmanuelle Picard, T. Charvolin, E. Hadji, M. Heitzmann, B. Dal’zotto, M.E. Nier, Christian Seassal, P. Rojo-Roméo, Xavier Letartre	2003	67
3	Domain structure of magnetic layers deposited on patterned silicon Applied Physics Letters ·S. Landis, B. Rodmacq, B. Diény, B. Dal’zotto, S. Tedesco, M. Heitzmann	1999	35
4	Experimental demonstration of a low-loss optical H-tree distributionusing silicon-on-insulator microwaveguides Applied Physics Letters ·Laurent Vivien, S. Lardenois, Pascal Demange, S. Laval, Éric Cassan, Jean-Luc Cercus, A. Köster, J-M. Fédéli, M. Heitzmann	2004	27
5	A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF ₂ pockets IEEE Electron Device Letters ·S. Deleonibus, C. Caillat, G. Guégan, M. Heitzmann, M.E. Nier, S. Tedesco, B. Dal’zotto, F. Martín, P. Mur, A.M. Papon, G. Lecarval, S. Biswas, D. Souil	2000	24
6	65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation C. Caillat, S. Deleonibus, G. Guégan, S. Tedesco, B. Dal’zotto, M. Heitzmann, F. Martín, P. Mur, B. Marchand, F. Balestra	1999	16
7	Investigating 248 and 193nm resist degradation during reactive ion oxide etching Microelectronic Engineering ·Michael May, B. Mortini, M. Heitzmann, P. Gautier, Claire Sourd, Cyril Brochon, Georges Hadziioannou	2006	11
8	X-ray photoelectron spectroscopy analyses of metal stacks etched in Cl2/BCl3 high density plasmas Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Piotr Czupryński, O. Joubert, L. Vallier, Mark R. Puttock-Brown, M. Heitzmann	1998	11
9	New progress in the development of a 94-GHz pretuned module silicon IMPATT diode IEEE Transactions on Electron Devices ·M. Heitzmann, Mickaël Boudot	1983	10
10	Comparison between strip and rib SOI microwaveguides for intra-chip light distribution Optical Materials ·Laurent Vivien, Frédéric Grillot, E. Cassan, Pascal Demange, S. Lardenois, A. Lupu, S. Laval, M. Heitzmann, Jean Marc Fédéli	2004	9
11	Magnetic properties of Co/Pt multilayers deposited on patterned Si substrates Journal of Magnetism and Magnetic Materials ·S. Landis, B. Rodmacq, B. Diény, B. Dal’zotto, S. Tedesco, M. Heitzmann	2001	8
12	Full CMP integration of CVD TiN damascene sub-0.1-μm metal gate devices for ULSI applications IEEE Transactions on Electron Devices ·F. Ducroquet, H. Achard, F. Coudert, B. Prévitali, J.-F. Lugand, L. Ulmer, Thierry Farjot, Y. Gobil, M. Heitzmann, S. Tedesco, M.E. Nier, S. Deleonibus	2001	8
13	Re-examination of indium implantation for a low power 0.1 μm technology Pierre Bouillon, F. Bénistant, T. Skotnicki, G. Guégan, D. Roche, E. André, D. Mathiot, S. Tedesco, F. Martin, M. Heitzmann, M. Lerme, M. Haond	2002	7
14	New ARROW optical coupler for optical interconnect R. Orobtchouk, N. Schnell, T. Benyattou, Jean‐Marc Grégoire, S. Lardenois, M. Heitzmann, Jean-Marc Fédéli	2004	7
15	Efficiency evaluation of postetch metal stack anticorrosion treatments using chemical analyses by x-ray photoelectron spectroscopy and wide dispersive x-ray fluorescence Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Piotr Czupryński, O. Joubert, M. Heitzmann, D. Louis, C. Vizioz, E. Lajoinie	1997	5
16	Optical interconnects on SOI: a front end approach R. Orobtchouk, N. Schnell, T. Benyattou, S. Lardenois, Pascal Demange, A. Cordat, S. Laval, Éric Cassan, A. Köster, D. Bouchier, N. Bouzaida, B. Dal’zotto, Brigitte Florin, M. Heitzmann, Z. Lamouchi, D. Louis, L. Mollard, D. Renaud, Jean‐Luc Gautier	2003	5
17	Poly-Si gate patterning issues for ultimate MOSFET Microelectronic Engineering ·D. Louis, M.E. Nier, C. Fery, M. Heitzmann, A.M. Papon, S. Renard	2002	4
18	A heavy ion implanted pocket 0.10 μm n-type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·F. Bénistant, S. Tedesco, G. Guégan, F. Martin, M. Heitzmann, B. Dal’zotto	1996	4
19	Process development for 30 nm poly gate patterning on 1.2 nm oxide Microelectronic Engineering ·M. Heitzmann, M.E. Nier	2000	4
20	Intra-chip optical interconnects with compact and low-loss light distribution in silicon-on-insulator rib waveguides Éric Cassan, S. Lardenois, Pascal Demange, Laurent Vivien, M. Heitzmann, N. Bouzaida, L. Mollard, R. Orobtchouk, S. Laval	2004	3

About M. Heitzmann

M. Heitzmann is a scholar working on Architecture, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 38 papers that have together received 393 indexed citations. Recurring topics across this work include Semiconductor materials and devices (18 papers), Photonic and Optical Devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Semiconductor Lasers and Optical Devices (9 papers), Advancements in Photolithography Techniques (6 papers), Photonic Crystals and Applications (4 papers) and Advanced Surface Polishing Techniques (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (205 citations), Electrical and Electronic Engineering (323 citations), Surfaces, Coatings and Films (37 citations), Acoustics and Ultrasonics (2 citations) and Biomedical Engineering (90 citations). M. Heitzmann has collaborated with scholars based in France, Switzerland and Brunei. Frequent co-authors include B. Dal’zotto, S. Lardenois, Pascal Demange, Laurent Vivien, S. Laval, Éric Cassan, S. Tedesco, R. Orobtchouk, L. Mollard and E. Hadji. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, IEEE Transactions on Electron Devices, Solid-State Electronics and Japanese Journal of Applied Physics.

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