M. Heitzmann

598 total citations
38 papers, 393 citations indexed

About

M. Heitzmann is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. Heitzmann has authored 38 papers receiving a total of 393 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in M. Heitzmann's work include Semiconductor materials and devices (18 papers), Photonic and Optical Devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). M. Heitzmann is often cited by papers focused on Semiconductor materials and devices (18 papers), Photonic and Optical Devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). M. Heitzmann collaborates with scholars based in France, Switzerland and Brunei. M. Heitzmann's co-authors include B. Dal’zotto, S. Lardenois, Laurent Vivien, Pascal Demange, S. Laval, Éric Cassan, S. Tedesco, R. Orobtchouk, L. Mollard and Xavier Letartre and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Optics Letters.

In The Last Decade

M. Heitzmann

37 papers receiving 381 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Heitzmann France 10 323 205 90 66 37 38 393
Satyavolu S. Papa Rao United States 9 213 0.7× 152 0.7× 122 1.4× 58 0.9× 10 0.3× 30 301
H. Tamada Japan 12 456 1.4× 371 1.8× 84 0.9× 68 1.0× 102 2.8× 33 539
Hsiang‐Szu Chang Taiwan 10 335 1.0× 351 1.7× 137 1.5× 117 1.8× 25 0.7× 29 467
R. Brockenbrough United States 8 137 0.4× 228 1.1× 91 1.0× 87 1.3× 14 0.4× 12 312
M. B. Stern United States 8 201 0.6× 83 0.4× 132 1.5× 62 0.9× 65 1.8× 23 336
Shiang‐Feng Tang Taiwan 9 298 0.9× 249 1.2× 94 1.0× 107 1.6× 20 0.5× 29 363
Ngoc Diep Lai Taiwan 8 157 0.5× 221 1.1× 127 1.4× 25 0.4× 93 2.5× 15 308
D.E. Ioannou United States 11 400 1.2× 146 0.7× 24 0.3× 77 1.2× 39 1.1× 41 439
T. Onai Japan 16 677 2.1× 134 0.7× 106 1.2× 173 2.6× 13 0.4× 52 714
P. Fluckiger Switzerland 7 228 0.7× 114 0.6× 185 2.1× 18 0.3× 16 0.4× 15 311

Countries citing papers authored by M. Heitzmann

Since Specialization
Citations

This map shows the geographic impact of M. Heitzmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Heitzmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Heitzmann more than expected).

Fields of papers citing papers by M. Heitzmann

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Heitzmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Heitzmann. The network helps show where M. Heitzmann may publish in the future.

Co-authorship network of co-authors of M. Heitzmann

This figure shows the co-authorship network connecting the top 25 collaborators of M. Heitzmann. A scholar is included among the top collaborators of M. Heitzmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Heitzmann. M. Heitzmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Leduc, Patrick, M. Assous, D. Bouchu, et al.. (2008). The Effect of Process Parameters on Electrical Properties of High Density Through-Si Vias. 2 indexed citations
2.
May, Michael, et al.. (2006). Investigating 248 and 193nm resist degradation during reactive ion oxide etching. Microelectronic Engineering. 83(4-9). 1098–1102. 11 indexed citations
3.
Zelsmann, M., Emmanuelle Picard, V. Calvo, et al.. (2005). Silicon-on-insulator based quasi 3D photonic crystal structures. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5733. 23–23. 2 indexed citations
4.
Hadji, E., Benoît Cluzel, D. Sotta, et al.. (2004). Silicon-on-insulator photonic bandgap structures for future microphotonic devices. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5450. 292–292. 1 indexed citations
5.
Vivien, Laurent, Pascal Demange, S. Lardenois, et al.. (2004). Comparison between strip and rib SOI microwaveguides for intra-chip light distribution. Optical Materials. 27(5). 756–762. 9 indexed citations
6.
Lardenois, S., Pascal Demange, Laurent Vivien, et al.. (2003). Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors. Optics Letters. 28(13). 1150–1150. 99 indexed citations
7.
Demange, Pascal, S. Lardenois, Éric Cassan, et al.. (2002). Efficient light coupling into sub-micrometer rib and strip SOI waveguides. Integrated Photonics Research. IThI7–IThI7. 2 indexed citations
8.
Bouillon, Pierre, F. Bénistant, T. Skotnicki, et al.. (2002). Re-examination of indium implantation for a low power 0.1 μm technology. 897–900. 7 indexed citations
9.
Louis, D., et al.. (2002). Poly-Si gate patterning issues for ultimate MOSFET. Microelectronic Engineering. 61-62. 859–865. 4 indexed citations
10.
Deleonibus, S., C. Caillat, G. Guégan, et al.. (2000). A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF 2 pockets. IEEE Electron Device Letters. 21(4). 173–175. 24 indexed citations
11.
Ducroquet, F., B. Prévitali, Y. Gobil, et al.. (2000). Full CMP Integration of TiN Damascene Metal Gate Devices. 408–411. 2 indexed citations
12.
Deleonibus, S., C. Caillat, J. Gautier, et al.. (1999). The decananometer CMOS era - Is there CMOS after CMOS?. European Solid-State Device Research Conference. 1. 119–126. 1 indexed citations
13.
Caillat, C., S. Deleonibus, G. Guégan, et al.. (1999). 65 nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2 nm-thick gate oxide for 1.5 V operation. 89–90. 16 indexed citations
14.
Landis, S., B. Rodmacq, B. Diény, et al.. (1999). Domain structure of magnetic layers deposited on patterned silicon. Applied Physics Letters. 75(16). 2473–2475. 35 indexed citations
15.
Joubert, O., et al.. (1998). X-ray photoelectron spectroscopy analyses of metal stacks etched in Cl2/BCl3 high density plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(1). 147–158. 11 indexed citations
16.
Deleonibus, S., et al.. (1997). Elimination of Stress‐Induced Defects in Polybuffered LOCOS Isolation Scheme for Sub‐0.25 μm Designs. Journal of The Electrochemical Society. 144(6). L164–L166. 1 indexed citations
17.
Joubert, O., et al.. (1997). Efficiency evaluation of postetch metal stack anticorrosion treatments using chemical analyses by x-ray photoelectron spectroscopy and wide dispersive x-ray fluorescence. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 15(4). 1000–1007. 5 indexed citations
18.
Bénistant, F., et al.. (1996). A heavy ion implanted pocket 0.10 μm n-type metal–oxide–semiconductor field effect transistor with hybrid lithography (electron-beam/deep ultraviolet) and specific gate passivation process. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(6). 4051–4054. 4 indexed citations
19.
Arena, C., S. Deleonibus, M. Fayolle, et al.. (1994). 0.35μm CMOS Technology with Chemical Mechanical Polishing for Three Metallization Levels Planarization. 121–124. 1 indexed citations
20.
Vinet, Françoise, et al.. (1992). Comparative study of deep-UV resist processes for 0.35-μm technology. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1672. 526–526. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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