G. Molas

3.2k total citations · 1 hit paper
142 papers, 2.0k citations indexed

About

G. Molas is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Molas has authored 142 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 142 papers in Electrical and Electronic Engineering, 30 papers in Materials Chemistry and 15 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Molas's work include Advanced Memory and Neural Computing (104 papers), Semiconductor materials and devices (102 papers) and Ferroelectric and Negative Capacitance Devices (80 papers). G. Molas is often cited by papers focused on Advanced Memory and Neural Computing (104 papers), Semiconductor materials and devices (102 papers) and Ferroelectric and Negative Capacitance Devices (80 papers). G. Molas collaborates with scholars based in France, Italy and United States. G. Molas's co-authors include Elisa Vianello, B. De Salvo, E. Nowak, L. Perniola, P. Blaise, G. Ghibaudo, S. Deleonibus, M. Bernard, A. Toffoli and J.E. Sueiras and has published in prestigious journals such as Nature, Nature Communications and Applied Physics Letters.

In The Last Decade

G. Molas

139 papers receiving 2.0k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

The growing memristor industry

2025 35 citations Mario Lanza, Sebastián Pazos et al. Nature profile →

Peers

Countries citing papers authored by G. Molas

Since Specialization

Citations

This map shows the geographic impact of G. Molas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Molas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Molas more than expected).

Fields of papers citing papers by G. Molas

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Molas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Molas. The network helps show where G. Molas may publish in the future.

Co-authorship network of co-authors of G. Molas

This figure shows the co-authorship network connecting the top 25 collaborators of G. Molas. A scholar is included among the top collaborators of G. Molas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Molas. G. Molas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	On Chip Customized Learning on Resistive Memory Technology for Secure Edge AI 2025 ·(unknown), (unknown), Marco Piccoli, (unknown), N. Castellani, (unknown), (unknown), J. F. Nodin, F. Andrieu, Damien Querlioz, G. Molas, Louis Hutin, (unknown)	0
2	The growing memristor industry breakdown → 2025 ·Nature ·Mario Lanza, Sebastián Pazos, Fernando Aguirre, Abu Sebastian, Manuel Le Gallo, Syed M. Alam, S. Ikegawa, J. Joshua Yang, Elisa Vianello, Meng‐Fan Chang, G. Molas, (unknown), Daniele Ielmini, Ming Liu, J.B. Roldán	35
3	How Significant Is SET Programming Strategy in Enhancing RRAM Technology? 2024 ·SPIRE - Sciences Po Institutional REpository ·(unknown), Gaël Pillonnet, G. Molas	0
4	1S1R Multi-Level-Cell for Dense Quantized Recurrent Spiking Neural Network Inference Computing 2024 ·(unknown), (unknown), G. Navarro, M. Bernard, C. Carabasse, N. Castellani, T. Magis, C. Sabbione, G. Molas, F. Andrieu	1
5	Investigation of resistance fluctuations in ReRAM: physical origin, temporal dependence and impact on memory reliability 2023 ·HAL (Le Centre pour la Communication Scientifique Directe) ·(unknown), Damien Deleruyelle, Quentin Rafhay, (unknown), N. Castellani, J. F. Nodin, Alessandro Bricalli, (unknown), G. Molas, F. Andrieu	9
6	A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing 2023 ·Nature Communications ·S. Bianchi, (unknown), Erika Covi, Alessandro Bricalli, (unknown), (unknown), G. Molas, J. F. Nodin, F. Andrieu, Daniele Ielmini	29
7	The gap between academia and industry in resistive switching research 2023 ·Nature Electronics ·Mario Lanza, G. Molas, (unknown)	32
8	Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays 2019 ·IEEE Transactions on Circuits & Systems II Express Briefs ·(unknown), (unknown), Alexandre Levisse, (unknown), Mathieu Moreau, E. Nowak, G. Molas, Elisa Vianello, Jean‐Michel Portal	10
9	Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation 2019 ·IEEE Transactions on Electron Devices ·(unknown), Gilbert Sassine, Quentin Rafhay, G. Ghibaudo, G. Molas, E. Nowak	17
10	In-depth Characterization of Resistive Memory-Based Ternary Content Addressable Memories 2018 ·HAL (Le Centre pour la Communication Scientifique Directe) ·(unknown), Bastien Giraud, (unknown), Alessandro Grossi, N. Castellani, Gilbert Sassine, J. F. Nodin, G. Molas, C. Fenouillet-Béranger, Giacomo Indiveri, E. Nowak, Elisa Vianello	17
11	Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications 2018 ·HAL (Le Centre pour la Communication Scientifique Directe) ·Gilbert Sassine, (unknown), (unknown), (unknown), Alexandre Levisse, C. Cagli, (unknown), (unknown), Elisa Vianello, M. Bernard, G. Molas, E. Nowak	20
12	(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions 2018 ·ECS Transactions ·G. Molas, Gilbert Sassine, (unknown), (unknown), (unknown), C. Cagli, J. Coignus, P. Blaise, E. Nowak	27
13	Controlling oxygen vacancies in doped oxide based CBRAM for improved memory performances 2014 ·G. Molas, Elisa Vianello, F. Dahmani, (unknown), P. Blaise, J. Guy, A. Toffoli, M. Bernard, A. Roule, (unknown), Christophe Licitra, B. De Salvo, L. Perniola	30
14	On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations 2013 ·Boubacar Traoré, Elisa Vianello, G. Molas, M. Gély, J. F. Nodin, E. Jalaguier, P. Blaise, B. De Salvo, L. R. C. Fonseca, Kan‐Hao Xue, Yoshio Nishi	5
15	Defects-induced gap states in hydrogenated γ-alumina used as blocking layer for non-volatile memories 2011 ·Microelectronic Engineering ·(unknown), P. Blaise, G. Molas, (unknown), M. Gély, Jean‐Paul Barnes, G. Ghibaudo, B. De Salvo	3
16	Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling 2011 ·IEEE Transactions on Electron Devices ·Elisa Vianello, F. Driussi, P. Blaise, Pierpaolo Palestri, David Esseni, L. Perniola, G. Molas, B. De Salvo, L. Selmi	44
17	Investigation of charge-trap memories with AlN based band engineered storage layers 2010 ·G. Molas, (unknown), R. Kies, (unknown), M. Bocquet, M. Gély, (unknown), P. Brianceau, L. Vandroux, G. Ghibaudo, B. De Salvo	1
18	Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories 2008 ·Microelectronic Engineering ·G. Molas, M. Bocquet, Julien Buckley, H. Grampeix, M. Gély, (unknown), F. Martín, P. Brianceau, (unknown), (unknown), S. Lombardo, G. Pananakakis, G. Ghibaudo, B. De Salvo, S. Deleonibus	8
19	Effect of Nitridation for High-K Layers by ALCVDTM in Order to Decrease the Trapping in Non Volatile Memories 2007 ·ECS Transactions ·H. Grampeix, (unknown), G. Molas, M. Bocquet, F. Martín, N. Rochat, E. Martínez, Christophe Licitra, (unknown), Anne‐Marie Papon, M. Gély, (unknown)	3
20	Single Electron EffectsandStructuralEffects in Ultrascaled Silicon Nanocrystal Floating-Gate Memories 2004 ·IEEE Transactions on Nanotechnology ·G. Molas, (unknown), G. Ghibaudo, D. Mariolle, A. Toffoli, N. Buffet, Rosaria A. Puglisi, S. Lombardo, S. Deleonibus	39

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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