C. Cagli

4.0k total citations
68 papers, 3.1k citations indexed

About

C. Cagli is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics and Materials Chemistry. According to data from OpenAlex, C. Cagli has authored 68 papers receiving a total of 3.1k indexed citations (citations by other indexed papers that have themselves been cited), including 68 papers in Electrical and Electronic Engineering, 19 papers in Polymers and Plastics and 15 papers in Materials Chemistry. Recurrent topics in C. Cagli's work include Advanced Memory and Neural Computing (68 papers), Ferroelectric and Negative Capacitance Devices (61 papers) and Semiconductor materials and devices (29 papers). C. Cagli is often cited by papers focused on Advanced Memory and Neural Computing (68 papers), Ferroelectric and Negative Capacitance Devices (61 papers) and Semiconductor materials and devices (29 papers). C. Cagli collaborates with scholars based in France, Italy and Spain. C. Cagli's co-authors include Daniele Ielmini, F. Nardi, Andrea L. Lacaita, Ugo Russo, J. Suñé, L. Perniola, Ming Liu, Shibing Long, E. Miranda and Xiaojuan Lian and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

C. Cagli

67 papers receiving 3.1k citations

Peers

Countries citing papers authored by C. Cagli

Since Specialization

Citations

This map shows the geographic impact of C. Cagli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Cagli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Cagli more than expected).

Fields of papers citing papers by C. Cagli

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Cagli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Cagli. The network helps show where C. Cagli may publish in the future.

Co-authorship network of co-authors of C. Cagli

This figure shows the co-authorship network connecting the top 25 collaborators of C. Cagli. A scholar is included among the top collaborators of C. Cagli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Cagli. C. Cagli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Performance Improvement on HfO₂-Based 1T Ferroelectric NVM by Electrical Preconditioning 2019 ·SPIRE - Sciences Po Institutional REpository ·C. Cagli, L. Perniola, F. Gaillard, (unknown), T. Melde, (unknown), Martin Trentzsch, Steffen Wittek, Sebastian Beyer	2
2	Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications 2018 ·HAL (Le Centre pour la Communication Scientifique Directe) ·Gilbert Sassine, (unknown), (unknown), (unknown), Alexandre Levisse, C. Cagli, (unknown), (unknown), Elisa Vianello, M. Bernard, G. Molas, E. Nowak	20
3	(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions 2018 ·ECS Transactions ·G. Molas, Gilbert Sassine, (unknown), (unknown), (unknown), C. Cagli, J. Coignus, P. Blaise, E. Nowak	27
4	Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 2016 ·Solid-State Electronics ·(unknown), (unknown), Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, (unknown), (unknown), S. Jeannot, (unknown), G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola	16
5	Chemical and structural properties of conducting nanofilaments in TiN/HfO₂-based resistive switching structures 2013 ·Nanotechnology ·P. Calka, E. Martínez, V. Delaye, D. Lafond, G. Audoit, D. Mariolle, Nicolas Chevalier, H. Grampeix, C. Cagli, V. Jousseaume, C. Guedj	68
6	Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM 2013 ·Scientific Reports ·Shibing Long, L. Perniola, C. Cagli, Julien Buckley, Xiaojuan Lian, E. Miranda, Feng Pan, Ming Liu, J. Suñé	136
7	Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS₂-Based Conductive Bridge Memories 2013 ·Japanese Journal of Applied Physics ·Giorgio Palma, Elisa Vianello, G. Molas, C. Cagli, (unknown), (unknown), Marina Reyboz, C. Carabasse, M. Bernard, F. Dahmani, (unknown), (unknown), B. De Salvo	12
8	On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories 2013 ·Solid-State Electronics ·(unknown), Elisa Vianello, C. Cagli, G. Molas, (unknown), P. Blaise, C. Carabasse, (unknown), V. Jousseaume, B. De Salvo, F. Dahmani, (unknown), (unknown), (unknown)	21
9	Nanowire-based resistive switching memories: devices, operation and scaling 2013 ·Journal of Physics D Applied Physics ·Daniele Ielmini, C. Cagli, F. Nardi, Yuegang Zhang	48
10	Understanding the Role of the Ti Metal Electrode on the Forming of HfO2-Based RRAMs 2012 ·Iris Unimore (University of Modena and Reggio Emilia) ·Andrea Padovani, Luca Larcher, (unknown), C. Cagli, B. De Salvo	22
11	Quantum point contact model of filamentary conduction in resistive switching memories 2012 ·Xiaojuan Lian, Shibing Long, C. Cagli, Julien Buckley, E. Miranda, Ming Liu, J. Suñé	11
12	Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires 2011 ·Small ·C. Cagli, F. Nardi, B. Harteneck, Zhongkui Tan, Yuegang Zhang, Daniele Ielmini	69
13	Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 2011 ·Nanotechnology ·Daniele Ielmini, F. Nardi, C. Cagli	194
14	Cell-based models for the switching statistics of RRAM 2011 ·Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·Shibing Long, C. Cagli, Daniele Ielmini, Ming Liu, J. Suñé	1
15	Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices 2011 ·IEEE Electron Device Letters ·F. Nardi, C. Cagli, Sabina Spiga, Daniele Ielmini	11
16	Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM 2011 ·IEEE Transactions on Electron Devices ·Daniele Ielmini, F. Nardi, C. Cagli	99
17	Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories 2010 ·Solid-State Electronics ·F. Nardi, Daniele Ielmini, C. Cagli, Sabina Spiga, M. Fanciulli, L. Goux, Dirk J. Wouters	95
18	Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices 2009 ·IEEE Transactions on Electron Devices ·Ugo Russo, Daniele Ielmini, C. Cagli, Andrea L. Lacaita	325
19	Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices 2009 ·IEEE Transactions on Electron Devices ·Ugo Russo, Daniele Ielmini, C. Cagli, Andrea L. Lacaita	302
20	Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM 2007 ·Virtual Community of Pathological Anatomy (University of Castilla La Mancha) ·Ugo Russo, Daniele Ielmini, C. Cagli, Andrea L. Lacaita, Sabina Spiga, Claudia Wiemer, Michele Perego, M. Fanciulli	116

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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