Philippe Dollfus

4.2k total citations
175 papers, 3.0k citations indexed

About

Philippe Dollfus is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Philippe Dollfus has authored 175 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 132 papers in Electrical and Electronic Engineering, 87 papers in Atomic and Molecular Physics, and Optics and 79 papers in Materials Chemistry. Recurrent topics in Philippe Dollfus's work include Advancements in Semiconductor Devices and Circuit Design (104 papers), Semiconductor materials and devices (89 papers) and Quantum and electron transport phenomena (62 papers). Philippe Dollfus is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (104 papers), Semiconductor materials and devices (89 papers) and Quantum and electron transport phenomena (62 papers). Philippe Dollfus collaborates with scholars based in France, Vietnam and United States. Philippe Dollfus's co-authors include Jérôme Saint-Martin, Việt Hùng Nguyễn, Arnaud Bournel, Damien Querlioz, V. Nam, S. Galdin‐Retailleau, Olivier Bichler, Christian Gamrat, S. Galdin and P. Hesto and has published in prestigious journals such as Physical Review Letters, The Journal of Chemical Physics and Physical review. B, Condensed matter.

In The Last Decade

Philippe Dollfus

168 papers receiving 2.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Philippe Dollfus France 28 1.8k 1.6k 1.2k 303 158 175 3.0k
G. Deligeorgis Greece 23 1.2k 0.7× 676 0.4× 726 0.6× 634 2.1× 158 1.0× 73 2.1k
Mathieu Luisier Switzerland 38 4.1k 2.2× 2.6k 1.6× 1.3k 1.1× 1.6k 5.3× 46 0.3× 252 5.6k
Genquan Han China 36 4.1k 2.2× 1.7k 1.1× 613 0.5× 1.0k 3.3× 60 0.4× 356 5.0k
Martin Salinga Germany 27 3.1k 1.7× 3.0k 1.9× 281 0.2× 636 2.1× 71 0.4× 46 4.3k
Flavio Abreu Araujo Belgium 17 1.3k 0.7× 352 0.2× 970 0.8× 230 0.8× 235 1.5× 46 2.1k
H. Rahimpour Soleimani Iran 21 829 0.5× 395 0.2× 909 0.8× 159 0.5× 159 1.0× 139 1.6k
King Yan Fong United States 19 1.1k 0.6× 700 0.4× 1.1k 0.9× 321 1.1× 24 0.2× 27 1.9k
Shi‐Jun Liang China 24 2.3k 1.3× 2.1k 1.3× 350 0.3× 346 1.1× 88 0.6× 50 3.5k
Min‐Soo Hwang South Korea 19 714 0.4× 329 0.2× 923 0.8× 678 2.2× 79 0.5× 40 1.6k
F. Campabadal Spain 25 2.5k 1.4× 388 0.2× 495 0.4× 321 1.1× 123 0.8× 237 2.7k

Countries citing papers authored by Philippe Dollfus

Since Specialization
Citations

This map shows the geographic impact of Philippe Dollfus's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Philippe Dollfus with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Philippe Dollfus more than expected).

Fields of papers citing papers by Philippe Dollfus

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Philippe Dollfus. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Philippe Dollfus. The network helps show where Philippe Dollfus may publish in the future.

Co-authorship network of co-authors of Philippe Dollfus

This figure shows the co-authorship network connecting the top 25 collaborators of Philippe Dollfus. A scholar is included among the top collaborators of Philippe Dollfus based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Philippe Dollfus. Philippe Dollfus is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sjakste, Jelena, Raja Sen, Nathalie Vast, et al.. (2025). Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions. The Journal of Chemical Physics. 162(6). 4 indexed citations
2.
Dollfus, Philippe, et al.. (2024). Electron-phonon coupling and transient dynamics of hot carriers: from interpretation of photoemission experiments to transport simulations in devices. SPIRE - Sciences Po Institutional REpository. 30. 28–28. 1 indexed citations
3.
Dollfus, Philippe, et al.. (2023). Thermal conductance of twisted-layer graphite nanofibers. Carbon. 204. 601–611. 5 indexed citations
4.
Rideau, D., O. Saxod, Dominique Golanski, et al.. (2022). Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices. IEEE Journal of the Electron Devices Society. 10. 584–592. 7 indexed citations
5.
Logoteta, Demetrio, et al.. (2020). Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions. Institutional Research Information System (University of Udine). 24 indexed citations
6.
Pala, Marco, et al.. (2018). High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions. Nanotechnology. 30(2). 25201–25201. 15 indexed citations
7.
Saint-Martin, Jérôme, et al.. (2017). Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors. Scientific Reports. 7(1). 14783–14783. 16 indexed citations
8.
Nguyễn, Việt Hùng, et al.. (2016). Valley Filtering and Electronic Optics Using Polycrystalline Graphene. Physical Review Letters. 117(24). 247702–247702. 44 indexed citations
9.
Nguyễn, Việt Hùng, et al.. (2016). Transport properties through graphene grain boundaries: strain effects versus lattice symmetry. Nanoscale. 8(22). 11658–11673. 14 indexed citations
10.
Nguyễn, Việt Hùng, et al.. (2015). Strong negative differential conductance in strained graphene devices. Journal of Applied Physics. 118(23). 5 indexed citations
11.
Saint-Martin, Jérôme, et al.. (2015). High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering. Nanotechnology. 26(49). 495202–495202. 46 indexed citations
12.
Dollfus, Philippe, Việt Hùng Nguyễn, & Jérôme Saint-Martin. (2015). Thermoelectric effects in graphene nanostructures. Journal of Physics Condensed Matter. 27(13). 133204–133204. 159 indexed citations
13.
Saint-Martin, Jérôme, Arnaud Bournel, Damien Querlioz, et al.. (2013). Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor. Journal of Nanoscience and Nanotechnology. 13(2). 771–775. 1 indexed citations
14.
Nguyễn, Việt Hùng, et al.. (2012). Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect. Nanotechnology. 23(6). 65201–65201. 32 indexed citations
15.
Valentin, A., et al.. (2011). Edge effects on phonon dispersion and density-of-states of graphene nanoribbons and nanoflakes. Chinese Journal of Physics. 49(1). 31–40. 2 indexed citations
16.
Nam, V. & Philippe Dollfus. (2010). Modeling of metal–graphene coupling and its influence on transport properties in graphene at the charge neutrality point. Journal of Physics Condensed Matter. 22(42). 425301–425301. 15 indexed citations
17.
Nam, V., et al.. (2007). Phonon-induced shot noise enhancement in resonant tunneling structures. Applied Physics Letters. 91(2). 10 indexed citations
18.
Nguyễn, Việt Hùng, et al.. (2005). Shot noise in metallic double dot structures with a negative differential conductance. Applied Physics Letters. 87(12). 11 indexed citations
19.
Cassan, Éric, S. Galdin, Philippe Dollfus, & P. Hesto. (2000). Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs. IEICE Transactions on Electronics. 83(8). 1194–1202. 1 indexed citations
20.
Mouis, M., Philippe Dollfus, & R. Castagné. (1989). Etude Monte-Carlo du transport dans un gaz d'électrons bidimensionnel dégénéré. Revue de Physique Appliquée. 24(2). 183–188. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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