M. Mellier

703 total citations
15 papers, 108 citations indexed

About

M. Mellier is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, M. Mellier has authored 15 papers receiving a total of 108 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Electrical and Electronic Engineering, 7 papers in Electronic, Optical and Magnetic Materials and 5 papers in Biomedical Engineering. Recurrent topics in M. Mellier's work include Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (7 papers) and Advanced Surface Polishing Techniques (5 papers). M. Mellier is often cited by papers focused on Semiconductor materials and devices (12 papers), Copper Interconnects and Reliability (7 papers) and Advanced Surface Polishing Techniques (5 papers). M. Mellier collaborates with scholars based in France, Switzerland and Czechia. M. Mellier's co-authors include J. E. A. M. van den Meerakker, Fabien Deprat, X. Garros, L. Tosti, L. Pasini, H. Dansas, Laurent Brunet, P. Batude, B. Prévitali and N. Rambal and has published in prestigious journals such as Journal of The Electrochemical Society, Thin Solid Films and Solid-State Electronics.

In The Last Decade

M. Mellier

15 papers receiving 104 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Mellier France 6 100 34 22 17 16 15 108
J. Leib Germany 8 94 0.9× 27 0.8× 9 0.4× 13 0.8× 20 1.3× 25 121
C. Richard France 7 137 1.4× 23 0.7× 31 1.4× 14 0.8× 13 0.8× 18 150
S. Cristoloveanu France 9 295 3.0× 27 0.8× 21 1.0× 14 0.8× 22 1.4× 14 312
Nahee Park South Korea 5 66 0.7× 96 2.8× 26 1.2× 17 1.0× 20 1.3× 14 121
C. Wu Taiwan 4 47 0.5× 29 0.9× 11 0.5× 9 0.5× 23 1.4× 5 75
Dimitris P. Ioannou United States 11 308 3.1× 34 1.0× 11 0.5× 29 1.7× 16 1.0× 33 312
L. Pinzelli France 5 102 1.0× 39 1.1× 26 1.2× 9 0.5× 17 1.1× 12 109
I.-C. Chen United States 9 239 2.4× 29 0.9× 12 0.5× 29 1.7× 25 1.6× 22 253
D. Blachier France 7 145 1.4× 23 0.7× 12 0.5× 18 1.1× 33 2.1× 23 156
Ibrahim Ban United States 7 145 1.4× 18 0.5× 11 0.5× 28 1.6× 11 0.7× 15 152

Countries citing papers authored by M. Mellier

Since Specialization
Citations

This map shows the geographic impact of M. Mellier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Mellier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Mellier more than expected).

Fields of papers citing papers by M. Mellier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Mellier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Mellier. The network helps show where M. Mellier may publish in the future.

Co-authorship network of co-authors of M. Mellier

This figure shows the co-authorship network connecting the top 25 collaborators of M. Mellier. A scholar is included among the top collaborators of M. Mellier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Mellier. M. Mellier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Deprat, Fabien, F. Nemouchi, C. Fenouillet-Béranger, et al.. (2016). First integration of Ni0.9Co0.1 on pMOS transistors. 133–135. 4 indexed citations
2.
Fenouillet-Béranger, C., B. Prévitali, P. Batude, et al.. (2015). FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. Solid-State Electronics. 113. 2–8. 19 indexed citations
3.
Fenouillet-Béranger, C., B. Prévitali, P. Batude, et al.. (2014). FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration. 110–113. 23 indexed citations
4.
Weber, O., N. Planes, V. Barral, et al.. (2013). Junction engineering for FDSOI technology speed/power enhancement. 1–2. 1 indexed citations
5.
Jeannot, S., C. Cagli, V. Jousseaume, et al.. (2012). Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65nm advanced complementary metal oxide semiconductor technology. Thin Solid Films. 533. 24–28. 23 indexed citations
6.
Haxaire, K., et al.. (2009). Characterization and impact of reduced copper plating overburden on 45nm interconnect performances. Microelectronic Engineering. 87(3). 421–425. 2 indexed citations
7.
Roy, D., Pauline Vannier, Y. Le Friec, et al.. (2009). Key Process steps for high reliable SiOCH low-k dielectrics for the sub 45nm technology nodes. 122–124. 3 indexed citations
8.
Mellier, M., et al.. (2008). Characterization of copper grain growth limitations inside narrow wires depending of overburden thickness. Microelectronic Engineering. 85(10). 1988–1991. 5 indexed citations
9.
Petitdidier, S., et al.. (2007). Post Cu-CMP Engineering Challenges for the 65 nm Technology Nodes and Beyond. ECS Transactions. 11(2). 431–440. 1 indexed citations
11.
Petitdidier, S., et al.. (2007). Elimination of Post Cu-CMP Watermark by Optimizing Post CMP Clean to Control Cu Dissolution. ECS Transactions. 11(2). 387–394. 1 indexed citations
12.
Margain, A., J.C. Dupuy, L.G. Gosset, et al.. (2006). Integration of multi-level self-aligned CoWP barrier compatible with high performance BEOL. 863. 33–35. 2 indexed citations
13.
Arnal, V., A. Farcy, C. Guedj, et al.. (2006). 45 nm Node Multi Level Interconnects with Porous SiOCH Dielectric k=2.5. 213–215. 4 indexed citations
14.
Besling, W.F.A., et al.. (2004). Continuity and morphology of TaN barriers deposited by Atomic Layer Deposition and comparison with physical vapor deposition. Microelectronic Engineering. 76(1-4). 60–69. 8 indexed citations
15.
Meerakker, J. E. A. M. van den & M. Mellier. (2001). Kinetic and Diffusional Aspects of the Dissolution of Si in HF Solutions. Journal of The Electrochemical Society. 148(3). G166–G166. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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